DB-3, db-4 silicon bidirectional diacs the glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs ar e designed specifically for triggering thyristors. they dem onstrate low breakover current at breakover voltage as they withstand peak pulse current. the breakover symmetry is within four volts with a typical breakover voltage of DB-3 32 v, db-4 40 v. these diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-mot or speed controls, and heat controls. storage temperature range t s - 40 o c to +150 o c operating temperature range t j - 40 o c to +100 o c maximum ratings at 50 o c ambient peak current (10 s duration, 120 cycle repetition rate) i p 2 a max. peak output voltage e p 3 volts max. 1) characteristics at t a = 25 o c parameter symbol min. max. unit DB-3 28 36 breakover voltage db-4 v (br)1 and v (br)2 35 45 v breakover currents i (br)1 and i (br)2 - 200 a breakover voltage symmetry [v (br)1 ]-[v (br)2 ] - 3.8 v dynamic breakover voltage i = [ i br to i f = 10 ma ] | v | 5 - v thermal impedance junction to ambient air r ja - 60 o c/w max. 3.9 max. 1.9 glass case do-35 max. 0.5 min. 27.5 min. 27.5 xxx cathode band part no. dimensions in mm black black black 60~ 120 v e p diac 0.1 u f circuit for peak output voltage test 20 1) 3.3 k 120 vac 60 hz load up to 1500 w 200 k 0.1 u f 100 v triac bilateral trigger diac typical diac-triac full-wave phase control circuit
|
