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Datasheet File OCR Text: |
geometry process details principal device types 1n645 thru 1n649 cbrhd-02 series gross die per 4 inch wafer 18,000 process cpd04 general purpose rectifier 500ma glass passivated rectifier chip process glass passivated mesa die size 26 x 26 mils die thickness 8.5 mils anode bonding pad area 14 x 14 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? www.centralsemi.com r4 (22-march 2010)
process cpd04 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CPD0410 |
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