1 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz general description features functional diagram the hmc995lp5ge is a 4 stage gaas phemt mmic 2 watt power amplifer with an integrated temperature compensated on-chip power detector which operates between 12 and 16 ghz. the hmc995lp5ge provides 27 db of gain, 35.5 dbm of saturated output power, and 24% pae from a +7v supply. the hmc995lp5ge exhibits excellent linearity and is optimized for high capacity digital microwave radio. it is also ideal for 13.75 to 14.5 ghz ku band vsat transmitters as well as satcom applications. the hmc995lp5ge amplifer i/os are internally matched to 50 ohms and is packaged in a leadless qfn 5x5 mm surface mount package and requires no external matching components. intergrated power detector saturated output power: 35.5 dbm @ 24% pae high output ip3: 41 dbm high gain: 27 db dc supply: +5v to +7v @ 1200 ma no external matching required electrical specifcations t a = +25 c, vdd = vdd1 = vdd2 = vdd3 = vdd4 = vdd5 = +7v, idd = 1200 ma [1] typical applications the hmc995lp5ge is ideal for: ? point-to-point radios ? point-to-multi-point radios ? vsat & satcom ? military & space parameter min. typ. max. units frequency range 12 - 16 ghz gain [3] 24 27 db gain variation over temperature 0.03 db/ c input return loss 9 db output return loss 15 db output power for 1 db compression (p1db) 32 34.5 dbm saturated output power (psat) 35.5 dbm output third order intercept (ip3) [2] 41 dbm total supply current (idd) 1200 ma [1] adjust (vgg1=vgg2=vgg3) between -2 to 0v to achieve idd = 1200ma typical. [2] measurement taken at +7v @ 1200ma, pout / tone = +22 dbm [3] board loss subtracted out for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t
a mp lifie rs - l ine ar & p o we r - smt 2 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature [1] p1db vs. temperature p1db vs. supply voltage -25 -15 -5 5 15 25 35 10 11 12 13 14 15 16 17 18 s21 s11 s22 frequency (ghz) response (db) 18 22 26 30 34 38 12 13 14 15 16 +25c +85c -40c frequency (ghz) gain (db) -25 -20 -15 -10 -5 0 12 13 14 15 16 +25c +85c -40c frequency (ghz) return loss (db) -30 -25 -20 -15 -10 -5 0 12 13 14 15 16 +25c +85c -40c frequency (ghz) return loss (db) 28 30 32 34 36 38 40 12 13 14 15 16 +25c +85c -40c frequency (ghz) p1db (dbm) 28 30 32 34 36 38 40 12 13 14 15 16 5v 6v 7v frequency (ghz) p1db (dbm) for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
a mp lifie rs - l ine ar & p o we r - smt 3 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz output ip3 vs. supply current, pout/tone = +22 dbm output ip3 vs. temperature, pout/tone = +22 dbm psat vs. supply current (idd) p1db vs. supply current (idd) psat vs. temperature psat vs. supply voltage 28 30 32 34 36 38 40 12 13 14 15 16 +25c +85c -40c frequency (ghz) psat (dbm) 28 30 32 34 36 38 40 12 13 14 15 16 5v 6v 7v frequency (ghz) psat (dbm) 28 30 32 34 36 38 40 12 13 14 15 16 1000 ma 1100 ma 1200 ma frequency (ghz) p1db (dbm) 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 +25c +85c -40c frequency (ghz) ip3 (dbm) 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 1000 ma 1100 ma 1200 ma frequency (ghz) ip3 (dbm) 28 30 32 34 36 38 40 12 13 14 15 16 1000 ma 1100 ma 1200 ma frequency (ghz) psat(dbm) for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
a mp lifie rs - l ine ar & p o we r - smt 4 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz power compression @ 13 ghz output ip3 vs. supply voltage, pout/tone = +22 dbm output im3 @ vdd = +6v output im3 @ vdd = +5v output im3 @ vdd = +7v 30 32 34 36 38 40 42 44 46 48 12 13 14 15 16 5v 6v 7v frequency (ghz) ip3 (dbm) power compression @ 15 ghz 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz pout/tone (dbm) im3 (dbc) 0 10 20 30 40 50 60 70 80 10 12 14 16 18 20 22 24 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz pout/tone (dbm) im3 (dbc) 0 5 10 15 20 25 30 35 40 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) 0 5 10 15 20 25 30 35 40 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 pout gain pae input power (dbm) pout (dbm), gain (db), pae (%) for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
a mp lifie rs - l ine ar & p o we r - smt 5 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz detector voltage vs. frequency & temperature 0.01 0.1 1 10 -5 3 11 19 27 35 12.5 ghz +25c 12.5 ghz +85c 12.5 ghz -40c 15.5 ghz +25c 15.5 ghz +85c 15.5 ghz -40c output power (dbm) vref-vdet (v) power dissipation gain & power vs. supply current @ 14 ghz gain & power vs. supply voltage @ 14 ghz reverse isolation vs. temperature -90 -80 -70 -60 -50 -40 -30 -20 -10 0 11 12 13 14 15 16 17 +25c +85c -40c frequency (ghz) isolation (db) 15 20 25 30 35 40 1000 1050 1100 1150 1200 gain p1db psat idd (ma) gain (db), p1db (dbm), psat (dbm) 20 25 30 35 40 45 50 5 5.5 6 6.5 7 gain p1db psat vdd (v) gain (db), p1db (dbm), psat (dbm) 0 2 4 6 8 10 12 -10 -8 -6 -4 -2 0 2 4 6 8 10 13 ghz 14 ghz 15 ghz power dissipation (w) input power (dbm) for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
a mp lifie rs - l ine ar & p o we r - smt 6 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz absolute maximum ratings drain bias voltage (vdd1-5) +8v rf input power (rfin) +24 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 137 mw/c above 85 c) 8.9 w thermal resistance (channel to gnd paddle) 7. 3 c / w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1a vdd (v) idd (ma) 5 1200 6 1200 7 1200 note: amplifer will operate over full voltage ranges shown above vgg adjusted to achieve idd = 1200 ma typical supply current vs. vdd electrostatic sensitive device observe handling precautions for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
a mp lifie rs - l ine ar & p o we r - smt 7 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz outline drawing part number package body material lead finish msl rating package marking [1] hmc995lp5ge rohs-compliant low stress injection molded plastic 100% matte sn msl3 [2] h995 xxxx [1] 4-digit lot number xxxx [2] max peak refow temperature of 260 c package information notes: 1. package body material: alumina 2. lead and ground paddle plating: 30-80 microinches gold over 50 microinches minimum nickel. 3. dimensions are in inches [millimeters]. 4. lead spacing tolerance is non-cumulative 5. package warp shall not exceed 0.05mm datum -c- 6. all ground leads and ground paddle must be soldered to pcb rf ground. for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
a mp lifie rs - l ine ar & p o we r - smt 8 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz pin descriptions pin number function description interface schematic 1-3, 9, 14 17-19, 23, 24 n/c these pins are not connected internally, however all data shown herein was measured with these pins connected to rf/dc ground externally. 4 rfin this pad is dc coupled and matched to 50 ohms. 5, 15 gnd these pins and package bottom must be connected to rf/dc ground. 6-8 vgg1, vgg2 vgg3 gate control for amplifer. external bypass capacitors of 100pf, 10nf and 4.7uf are required. please follow mmic amplifer biasing proceedure app note. 10, 11 20-22 vdd1, vdd2, vdd3, vdd4, vdd5 drain bias voltage for the amplifer. external bypass capacitors of 100pf, 10nf and 4.7f capacitors are required. 12 vref dc voltage of diode biased through external resistor, used for temperature compensation of vdet. see application circuit. 13 vdet dc voltage representing rf output power rectifed by diode which is biased through an external resistor. see appilation circuit. 16 rfout this pin is dc coupled and matched to 50 ohms. for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
a mp lifie rs - l ine ar & p o we r - smt 9 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz application circuit for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
a mp lifie rs - l ine ar & p o we r - smt 10 hmc995lp5ge v00.0611 gaas phemt mmic 3 watt power amplifier smt with power detector, 12 - 16 ghz evaluation pcb item description j1, j2, j5, j6 k connector sri j3, j4 dc pin c2, c3, c9, c12, c14, c16, c17, c19 100 pf capacitor, 0402 pkg. c1, c4, c10, c11, c13, c15, c18, c20 10 nf capacitor, 0402 pkg. c21, c22, c25 - c30 4.7uf capacitor, case a. u1 hmc995lp5ge power amplifer pcb 600-00163-00 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 or arlon fr4 the circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb eval01-hmc995lp5ge [1] for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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