View MRF21010_4508244.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

1 MRF21010r1 MRF21010sr1 motorola rf device data the rf mosfet line nCchannel enhancementCmode lateral mosfets designed for wCcdma base station applications with frequencies from 2110 to 2170 mhz. suitable for fm, tdma , cdma and multicarrier amplifier applications. to be used in class ab for pcnCpcs/cellular radio and wll applications. ? typical wCcdma performance: C45 dbc acpr, 2140 mhz, 28 volts, 5 mhz offset/4.096 mhz bw, 15 dtch output power 2.1 watts power gain 13.5 db efficiency 21% ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr @ 28 vdc, 2170 mhz, 10 watts cw output power ? excellent thermal stability ? characterized with series equivalent largeCsignal impedance parameters ? in tape and reel. r1 suffix = 500 units per 32 mm, 13 inch reel. maximum ratings rating symbol value unit drainCsource voltage v dss 65 vdc gateCsource voltage v gs C 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 43.75 0.25 w w/ c storage temperature range t stg C 65 to +150 c operating junction temperature t j 200 c esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 5.5 c/w note C caution C mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF21010/d semiconductor technical data 2170 mhz, 10 w, 28 v lateral nCchannel broadband rf power mosfets case 360bC05, style 1 niC360 MRF21010r1 case 360cC05, style 1 niC360s MRF21010sr1 ? motorola, inc. 2002 rev 4
MRF21010r1 MRF21010sr1 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drainCsource breakdown voltage (v gs = 0 vdc, i d =10 a) v (br)dss 65 vdc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss 10 adc gateCsource leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss 1 adc on characteristics gate threshold voltage (v ds = 10 v, i d = 50 a) v gs(th) 2.5 3 4 vdc gate quiescent voltage (v ds = 28 v, i d = 100 ma) v gs(q) 2.5 4 4.5 vdc drainCsource onCvoltage (v gs = 10 v, i d = 0.5 a) v ds(on) 0.4 0.5 vdc forward transconductance (v ds = 10 v, i d = 1 a) g fs 0.95 s dynamic characteristics reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss 1 pf functional tests (in motorola test fixture, 50 ohm system) twoCtone common source amplifier power gain (v dd = 28 vdc, p out = 10 w pep, i dq = 100 ma, f1 = 2110 mhz, f2 = 2170 mhz, tone spacing = 100 khz) g ps 12 13.5 db twoCtone drain efficiency (v dd = 28 vdc, p out = 10 w pep, i dq = 100 ma, f1 = 2110 mhz, f2 = 2170 mhz, tone spacing = 100 khz) 31 35 % third order intermodulation distortion (v dd = 28 vdc, p out = 10 w pep, i dq = 100 ma, f1 = 2110 mhz, f2 = 2170 mhz, tone spacing = 100 khz) imd C35 C30 dbc input return loss (v dd = 28 vdc, p out = 10 w pep, i dq = 100 ma, f1 = 2110 mhz, f2 = 2170 mhz, tone spacing = 100 khz) irl C12 C10 db output power, 1 db compression point, cw (v dd = 28 vdc, i dq = 100 ma, f = 2170 mhz) p1db 11 w commonCsource amplifier power gain (v dd = 28 vdc, p out = 10 w cw, i dq = 100 ma, f = 2170 mhz) g ps 12 db drain efficiency (v dd = 28 vdc, p out = 10 w cw, i dq = 100 ma, f = 2170 mhz) 42 % output mismatch stress (v dd = 28 vdc, p out = 10 w cw, i dq = 100 ma, f = 2170 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test
3 MRF21010r1 MRF21010sr1 motorola rf device data figure 1. MRF21010 test circuit schematic z5 0.752 x 0.087 microstrip z6 0.453 x 1.118 microstrip z7 0.921 x 0.154 microstrip z8 0.925 x 0.087 microstrip z1 0.964 x 0.087 microstrip z2 0.905 x 0.087 microstrip z3 0.433 x 0.512 microstrip z4 1.068 x 0.087 microstrip table 1. MRF21010 test circuit component designations and values part description value, p/n or dwg manufacturer c1 * (eared) 2.2 pf chip capacitor, b case 100b2r2bw atc (earless) 1.8 pf chip capacitor, b case 100b1r8bw atc c2 0.5 pf chip capacitor, b case 100b0r5bw atc c3, c9 10 f, 35 v tantalum chip capacitors 293d106x9035d2t spragueCvishay c4, c7 1 nf chip capacitors, b case 100b102jw atc c5, c6 5.6 pf chip capacitors, b case 100b5r6bw atc c8 470 f, 63 v electrolytic capacitor c10 10 pf chip capacitor, b case 100b100gw atc n1, n2 type n connector flange mounts 3052C1648C10 macom r1 1.0 k chip resistor (0805) r2 12 chip resistor (0805) pcb etched circuit board cCxmC00C001C01 cibel raw pcb material 0.030 glass teflon ? ( r = 2.55) tlx8C0300 taconic * piece part depending on eared / earless version of the device. figure 2. MRF21010 test circuit component layout rf output cutout area rf input
MRF21010r1 MRF21010sr1 4 motorola rf device data figure 3. MRF21010 demonstration board component layout table 2. MRF21010 demonstration board component designations and values designators description c1 1 f chip capacitor (0805), avx #08053g105zatea c2, c6 10 f, 35 v tantalum capacitors, vishayCsprague #293d106x9035d c3, c4 6.8 pf chip capacitors, accuCp (0805), avx #08051j6r8cbt c5 10 nf chip capacitor (0805), avx #08055c103katda c7 1.5 pf chip capacitor, accuCp (0805), avx #08051j2r2bbt c8, c10 0.5 pf chip capacitors, accuCp (0805), avx #08051j0r5bbt c9 10 pf chip capacitor, accuCp (0805), avx #08055j100gbt l1 19 mm 1.07 mm l2 7.7 mm 13.8 mm l3 9.3 mm 22 mm l4 17.7 mm 3.5 mm l5 3.4 mm 1.5 mm r1, r6 10 , 1/8 w chip resistors (0805) r2, r3 1 k , 1/8 w chip resistors (0805) r4 2.2 k , 1/8 w chip resistor (0805) r5 0 , 1/8 w chip resistor (0805) p1 5 k potentiometer cms cermet multiCturn, bourns #3224w t1 voltage regulator, microC8, motorola #lp2951 t2 bipolar npn transistor, sotC23, motorola #bc847 rf connectors type sma, johnson #142C0701C631 substrate: rogers ro4350, thickness 0.5 mm, r = 3.53
5 MRF21010r1 MRF21010sr1 motorola rf device data typical characteristics figure 4. class ab broadband circuit performance figure 5. wCcdma acpr, power gain and drain efficiency versus output power figure 6. intermodulation distortion versus output power figure 7. intermodulation distortion products versus output power figure 8. power gain versus output power figure 9. intermodulation and gain versus supply voltage
MRF21010r1 MRF21010sr1 6 motorola rf device data f mhz z in ? z ol * ? 1990 2110 2230 2.85 + j4.38 2.73 + j6.19 2.89 + j5.04 2.93 + j1.71 2.76 + j2.28 2.83 + j2.59 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. figure 10. series equivalent input and output impedance ?
7 MRF21010r1 MRF21010sr1 motorola rf device data package dimensions case 360bC05 issue f niC360 MRF21010r1 g e c

q 2x d 2x k 2x b b (flange) h f a m (insulator) a t n (lid) r (lid) s (insulator) 360cC05 issue d MRF21010sr1 niC360s
e c
h f r (lid) s (insulator) d 2x b b (flange) m (insulator) t n (lid) a (flange) a k 2x pin 3
MRF21010r1 MRF21010sr1 8 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. typical parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including t ypicals must be validated for each customer application by customers technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola, inc. motorola, inc. is an equal opportunity/a ffirmative action employer. motorola and the logo are registered in the us patent & t rademark office. all other product or service names are the property of t heir respective owners. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1C303C675C2140 or 1C800C441C2447 japan : motorola japan ltd.; sps, technical information center, 3C20C1, minamiCaz abu. minatoCku, tokyo 106C8573 japan. 8 1C3C3440C3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t., hong ko ng. 852C26668334 technical information center: 1C800C521C6274 home page : http://www .motorola.com/semiconductors/ MRF21010/d ?

▲Up To Search▲

Price & Availability of MRF21010

	To Download MRF21010 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .