page . 1 rev.0.1-jul.14.2009 PJSOT05CFN3 e.s.d. dual protection diode array this dual unidirectional esd protector array family have been designed to protect sensitive equipment against esd in high speed transmission buses, operating at 5v. this dual array offers an integrated solution to protect up to 2 data lines in a unidirectional mode or, 1 data line in a bi-directional mode, in application where the board space is a premium, in our dfn 3l package version. features ? iec61000-4-2 esd 15kv air, 8kv contact compliance ? low leakage current,maximum of 0.5 ? a at rated voltage ? maximum capacitance of 10pf per device at 0vdc 1mhz ? peak power dissipation of 20w 8/20 ? s waveform ? pin to pin compatible with standard dfn 3l ? in compliance with eu rohs 2002/95/ec directives mechanical data ? case: dfn 3l, molded plastic ? terminals: solderable per mil-std-750, method 2026 ? marking: af maximum ratings (per device) note : 1.capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration. electraical characteristics (per device)t j =25 o c 0.042(1.05) 0.037(0.95) 0.013(0.32) 0.008(0.22) 0.014(0.36) 0.013(0.32) 0.008(0.22) 0.002(0.05) max. 0.026(0.65) 0.021(0.55) 0.0 (0.55) 0.047(0.45) 22 0.0 (0.55) 0.047(0.45) 22 0.0 (0.20) 0.004(0.10) 08 0.0 (0.20)14 0.0 (0.20) 0.004(0.10) 08 dfn 3l dfn 3l unit : inch(mm) unit : inch(mm) parameter symbol value units peak pulse power (8/20 ? s waveform) p pp 20 w peak pulse current (8/20 ? s waveform) i ppm 2a esd voltage (hbm per mil std883c-method 3015-6) v esd 20 kv operating temperature range t j -55 to +125 o c storage temperature range t stg -55 to +150 o c parameter symbol test condition min. typ. max. units reverse stand-off voltage v wrm --- 5 . 0 v reverse breakdown voltage v br i br =1ma 6.2 - 7.2 v reverse leakage current i r v r =5v - - 0.5 ? a clamping voltage (8/20 ? s) v c i pp =2a - - 10 v off state junction capacitance (note 1) c j 0vdc bias f=1mhz between pin 1,2 to 3 (gnd) -910pf pan jit reserves the right to improve product design,functions and reliability without notice 1 2 3 1 2 3
page . 2 rev.0.1-jul.14.2009 typical characteristic curves (per device)t j =25 o c pulse waveform 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 time, sec percent of ipp 50% of ipp @ 20s rise time 10-90% - 8s 6.5 7 7.5 8 8.5 9 9.5 00.511.52 peak current, a 8/20s clamping voltage, v 4 5 6 7 8 9 10 012345 vdc bias, v junction capacitnace, pf clamping voltage vs 8/20s ipp off-state capacitance vs dc bias PJSOT05CFN3
page . 3 rev.0.1-jul.14.2009 legal statement copyright panjit international, inc 2009 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. mounting pad layout order information ? packing information t/r - 8k per 7" plastic reel 0.02 (0.70) 8 0.02 (0.68) 7 0.043 (1.10) 0.017 (0.42) 0.010 (0.26) 0.004 (0.10) 0.024 (0.60) 0.010 (0.25) dfn 3l dfn 3l PJSOT05CFN3
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