IRG4PF50WD insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c ? optimized for use in welding and switch-mode power supply applications ? industry benchmark switching losses improve efficiency of all power supply topologies ? 50% reduction of eoff parameter ? low igbt conduction losses ? latest technology igbt design offers tighter parameter distribution coupled with exceptional reliability ? igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? industry standard to-247ac package benefits pd- 91788 parameter min. typ. max. units r q jc junction-to-case - igbt CCC CCC 0.64 r q jc junction-to-case - diode CCC CCC 0.83 c/w r q cs case-to-sink, flat, greased surface CCC 0.24 CCC r q ja junction-to-ambient, typical socket mount CCC CCC 40 wt weight CCC 6 (0.21) CCC g (oz) thermal resistance ? lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die mosfets up to 100khz ? hexfred tm diodes optimized for performance with igbts. minimized recovery characteristics reduce noise, emi and switching losses www.irf.com 1 to-247ac v ces = 900v v ce(on) typ. = 2.25v @v ge = 15v, i c = 28a parameter max. units v ces collector-to-emitter breakdown voltage 900 v i c @ t c = 25c continuous collector current 51 i c @ t c = 100c continuous collector current 28 a i cm pulsed collector current ? 204 i lm clamped inductive load current ? 204 i f @ t c = 100c diode continuous forward current 16 i fm diode maximum forward current 204 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 200 p d @ t c = 100c maximum power dissipation 78 t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) c mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1n?m) absolute maximum ratings w
IRG4PF50WD 2 www.irf.com parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 900 v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage 0.295 v/c v ge = 0v, i c = 3.5ma v ce(on) collector-to-emitter saturation voltage 2.25 2.7 i c = 28a v ge = 15v 2.74 v i c = 60a see fig. 2, 5 2.12 i c = 28a, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage -13 m v/c v ce = v ge , i c = 250a g fe forward transconductance ? 26 39 s v ce = 50v, i c = 28a i ces zero gate voltage collector current 500 a v ge = 0v, v ce = 900v 2.0 v ge = 0v, v ce = 10v, t j = 25c 6.5 ma v ge = 0v, v ce = 900v, t j = 150c v fm diode forward voltage drop 2.5 3.5 v i c = 16a see fig. 13 2.1 3.0 i c = 16a, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v parameter min. typ. max. units conditions q g total gate charge (turn-on) 160 240 i c = 28a qge gate - emitter charge (turn-on) 19 29 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) 53 80 v ge = 15v t d(on) turn-on delay time 71 t j = 25c t r rise time 50 ns i c = 28a, v cc = 720v t d(off) turn-off delay time 150 220 v ge = 15v, r g = 5.0 w t f fall time 110 170 energy losses include "tail" and e on turn-on switching loss 2.63 diode reverse recovery. e off turn-off switching loss 1.34 mj see fig. 9, 10, 18 e ts total switching loss 3.97 5.3 t d(on) turn-on delay time 69 t j = 150c, see fig. 11, 18 t r rise time 52 ns i c = 28a, v cc = 720v t d(off) turn-off delay time 270 v ge = 15v, r g = 5.0 w t f fall time 190 energy losses include "tail" and e ts total switching loss 6.0 mj diode reverse recovery. l e internal emitter inductance 13 nh measured 5mm from package c ies input capacitance 3300 v ge = 0v c oes output capacitance 200 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 45 ? = 1.0mhz t rr diode reverse recovery time 90 135 ns t j = 25c see fig. 164 245 t j = 125c 14 i f = 16a i rr diode peak reverse recovery current 5.8 10 a t j = 25c see fig. 8.3 15 t j = 125c 15 v r = 200v q rr diode reverse recovery charge 260 675 nc t j = 25c see fig. 680 1838 t j = 125c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery 120 a/s t j = 25c see fig. during t b 76 t j = 125c 17 switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
IRG4PF50WD www.irf.com 3 0.1 1 10 100 0 10 20 30 40 f, fre q uenc y ( khz ) load current (a) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = w 60% of rated voltage i ideal diodes square wave: 40 fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 1000 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j
IRG4PF50WD 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.5 2.0 2.5 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 56 c i = a 28 c i = a 14 c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRG4PF50WD www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = v = 15v v = 720v g ge cc i = a 56 c i = a 28 c i = a 14 c fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 5.0 w fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 0 40 80 120 160 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 28a cc c 1 10 100 0 1000 2000 3000 4000 5000 6000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 3.5 4.0 4.5 5.0 5.5 6.0 r , gate resistance total switching losses (mj) g v = 720v v = 15v t = 25 c i = 28a cc ge j c ( w )
IRG4PF50WD 6 www.irf.com 1 10 100 1000 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c 10 20 30 40 50 60 0 4 8 12 16 i , collector current (a) total switching losses (mj) c r = t = 150 c v = 720v v = 15v g j cc ge fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - typical forward voltage drop vs. instantaneous forward current 5.0 w 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 fm f instantaneous forward current - i (a) forward volta g e drop - v (v) t = 150c t = 125c t = 25c j j j
IRG4PF50WD www.irf.com 7 fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 0 100 200 300 100 1000 trr - (ns) f di /dt - (a/ s) i = 32a i = 16a i = 8.0a f f f v = 200v t = 125c t = 25c r j j 0 300 600 900 1200 100 1000 f di /dt - (a / s) rr q - (nc ) i = 32a i = 16a i = 8.0a f f f v = 200v t = 125c t = 25c r j j 10 100 1000 100 1000 f di /dt - (a / s) di(rec)m /dt - (a/s) i = 32a i =16a i = 8.0a f f f v = 200v t = 125c t = 25c r j j 0 10 20 30 40 100 1000 f di /dt - (a / s) rrm i - (a) i = 8.0a i = 16a i = 32a f f f v = 200v t = 125c t = 25c r j j
IRG4PF50WD 8 www.irf.com same t y pe device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +v g 10% +v g 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge
IRG4PF50WD www.irf.com 9 v g gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 720v 4 x i c @25c 0 - 720v figure 18e. macro waveforms for figure 18a's test circuit
IRG4PF50WD 10 www.irf.com notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction tem- perature (figure 20) ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 w (figure 19) ? pulse width 80s; duty factor 0.1% . ? pulse width 5.0s, single shot . case outline and dimensions to-247ac dimensions in millimeters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per ansi y14.5m , 1982. 2 co n tr ollin g dim ensio n : inch . 3 dimensions are show n m illim et er s (in ch es). 4 conforms to jedec outline t o-247ac . lead assignments 1 - g a t e 2 - collector 3 - em itt er 4 - collector * longer leaded (20mm) version available (to-247ad) to order add "-e" suffix to part number world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 7/98
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