SIGC11T60SNC edited by infineon technologies ai ps dd hv3, l 7302 - s , edition 2, 28.11 .2003 igbt chip in npt - technology this chip is used for: igbt modules features: 600v npt technology 100m chip positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die size package orderi ng code sigc11t60sn c 600v 10a 3.25 x 3.25 mm 2 sawn on foil q67050 - a4155 - a001 mechanical parameter: raster size 3.25 x 3.25 area total / active 10.56 / 7.4 emitter pad size 2 x 1.6 gate pad size 1.08 x 0.68 mm 2 thickne ss 100 m wafer size 150 mm flat position 270 deg max.possible chips per wafer 1414 passivation frontside photoimide emitter metallization 3200 nm al si 1% collector metallization 1400 nm ni ag ? system suitable for epoxy and soft solder die bondin g die bond electrically conductive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC11T60SNC edited by infineon technologies ai ps dd hv3, l 7302 - s , edition 2, 28.11 .2003 maximum rating s: parameter symbol value unit collector - emitter voltage , t j =25 c v ce 600 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 30 a gate - emitter voltage v ge 20 v operating junc tion and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip), t j =25 c, unless otherwise specified: value parameter symbol conditions min. typ . max. unit collector - emitter breakdown voltage v (br)ces v ge =0v, i c =500a 600 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =10a 1.7 2 2.4 gate - emitter threshold voltage v ge(th) i c =300a, v ge =v ce 3 4 5 v zero gate voltage collector current i ces v ce =600v, v ge =0v 0.85 a gate - emitter leakage current i ges v ce =0v, v ge =20v 100 na dynamic characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capacitance c iss - 550 660 output capacitance c oss - 62 75 reverse transfer capacitance c rss v ce =25v v ge =0v f =1mhz - 42 51 pf switching characteristics (tested at component) , inductive load: value parameter symbol conditions 2) min. typ. max. unit turn - on delay time t d(on) - 28 34 rise time t r - 12 15 turn - off delay time t d(off) - 198 238 fall time t f t j =150 c v cc =400 v i c =10a v ge =+15/0v r g =25 w - 26 32 ns 2) switching conditions different to 600v standard igbt 2, under comparable switching conditions 40% faster turnoff than standa rd igbt 2. v alues also influenced by parasitic l - and c - in measurement and package.
SIGC11T60SNC edited by infineon technologies ai ps dd hv3, l 7302 - s , edition 2, 28.11 .2003 chip drawing:
SIGC11T60SNC edited by infineon technologies ai ps dd hv3, l 7302 - s , edition 2, 28.11 .2003 further electrical characteristics: this chip data sheet refers to the device data sheet sgp10n60a description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon tec hnologies ag , bereich kommunikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted char acteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologie s is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other per sons may be endangered.
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