7mbp 100ra-060 igbt ipm 600v 6100a+db intelligent power module ( r-series ) n n maximum ratings and characteristics ? absolute maximum ratings ( t c =25c ) items symbols ratings units min. max. dc bus voltage v dc 0 450 dc bus voltage (surge) v dc(surge) 0 500 dc bus voltage (short o p erating) v sc 200 400 collector-emitter voltage v ces 0 600 inverter continuous i c 100 collector 1ms i cp 200 a current duty=59.5% -i c 100 collector power dissipation one transistor p c 400 w dynamic brake continuous i c 50 collector current 1ms i cp 100 a forward current of diode i f 50 collector power dissi. db one transistor p c 198 w voltage of power supply for driver v cc *1 0 20 input signal voltage v in *2 0 v z input signal current i in 1 ma alarm signal voltage v alm *3 0 v cc v alarm signal current i alm *4 15 ma junction temperature t j 150 operating temperature t op -20 100 c storage temperature t stg -40 125 isolation voltage a.c. 1min. v iso 2500 v mounting *1 3.5 terminals *1 3.5 note: *1: recommendable value; 2.5 ~ 3.0 nm (m5) ? electrical characteristics of power circuit ( at t j =25c, v cc =15v ) items symbols conditions min. typ. max. units collector current at off signal input i ces v ce =600v, input terminal open 1.0 ma inv collector-emitter saturation voltage v ce(sat) i c =100a 2.8 v forward voltage of fwd v f -i c =100a 3.0 v collector current at off signal input i ces v ce =600v, input terminal open 1.0 ma db collector-emitter saturation voltage v ce(sat) i c =50a 2.8 v forward voltage of fwd v f -i c =50a 3.3 v ? electrical characteristics of control circuit ( at t j =25c, v cc =15v ) items symbols conditions min. typ. max. units current of p-line side driver (one unit) i ccp f sw =0~15khz, t c =-20~100c 3 18 current of n-line side driver (three units) i ccn f sw =0~15khz, t c =-20~100c 10 65 on 1.00 1.35 1.70 off 1.25 1.60 1.95 v input zener voltage v z r in =20k w 8.0 over heating protection temperature level t coh v dc =0v, i c =0a, case temp. 110 125 hysteresis t ch 20 igbt chips over heating protec. temp. level t joh surface of igbt chip 150 hysteresis t jh 20 inverter collector current protection level i oc t j =125c 150 db collector current protection level i oc t j =125c 75 over current detecting time t doc t j =25c 10 s alarm signal hold time t alm 1.5 2 ms limiting resistor for alarm r alm 1425 1500 1575 w under voltage protection level v uv 11.0 12.5 hysteresis v h 0.2 ? dynamic characteristics ( at t c =t j =125c, v cc =15v ) items symbols conditions min. typ. max. units t on i c =100a, v dc =300v 0.3 switching time t off 3.6 s t rr i f =100a, v dc =300v 0.4 n n outline drawing fig. 1 screw torque v in(th) input signal threshold voltage v v nm ma c a v
7mbp 100ra-060 igbt ipm 600v 6100a+db ? thermal characteristics items symbols conditions min. typ. max. units r th(j-c) inverter igbt 0.31 r th(j-c) diode 0.70 r th(j-c) db igbt 0.63 r th(c-f) with thermal compound 0.05 n n equivalent circuit drivers include following fun c tions short circuit protection circuit amplifier for driver a undervoltage protection circuit ? overcurrent protection circuit ? igbt chip overheating protection thermal resistance c/w
7mbp 100ra-060 igbt ipm 600v 6100a+db n n dynamic brake 0 1 2 3 4 0 20 40 60 80 100 v cc =17v,15v, 13v collector current vs. collector-emitter voltage t j =25c collector current : i c [a] collector-emitter voltage : v ce [v] 0 1 2 3 4 0 20 40 60 80 100 v cc =17v,15v, 13v collector current vs. collector-emitter voltage t j =125c collector current : i c [a] collector-emitter voltage : v ce [v] 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 igbt transient thermal resistance thermal resistance : r th(j-c) [c/w] pulse width : p w [sec] 0 100 200 300 400 500 600 700 0 50 100 150 200 250 300 350 400 450 500 reverse biased safe operating area v cc =15v, t j < 125c collector current : i c [a] collector-emitter voltage : v ce [v] 0 20 40 60 80 100 120 140 160 0 50 100 150 200 power derating for igbt (per device) collector power dissipation : p c [w] case temperature : t c [c] 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 over current protection vs. junction temperature v cc =15 v over current protection level : i oc [a] junction temperature: t j [c]
7mbp 100ra-060 igbt ipm 600v 6100a+db n n control circuit 0 5 10 15 20 25 0 5 10 15 20 25 30 35 v cc =17v v cc =15v v cc =13v v cc =17v v cc =15v v cc =13v p-side n-side power supply current vs. switching frequency t j =100c power supply current : i cc [ma] switching frequency : fsw [khz] 12 13 14 15 16 17 18 0,0 0,5 1,0 1,5 2,0 2,5 t j =25c t j =125c v in(on) v in(off) input signal threshold voltage vs. power supply voltage input signal threshold voltage : v in(on) , v in(off) [v] power supply voltage : v cc [v] 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 under voltage vs. junction temperature under voltage : v uv [v] junction temperature : t j [c] 20 40 60 80 100 120 140 0,0 0,2 0,4 0,6 0,8 1,0 under voltage hysterisis vs. junction temperature under voltage hysterisis : v h [v] junction temperature: t j [c] 12 13 14 15 16 17 18 0,0 0,5 1,0 1,5 2,0 2,5 3,0 t j =25c t j =100c alarm hold time vs. power supply voltage alarm hold timen : t alm [ms] power supply voltage : v cc [v] 12 13 14 15 16 17 18 0 50 100 150 200 t ch ,t jh t coh t joh over heating characteristics t coh , t joh , t ch , t jh vs. v cc over heating protection : t coh , t joh [c] over heating hysterisis : t ch , t jh [c] power supply voltage : v cc [v]
7mbp 100ra-060 igbt ipm 600v 6100a+db n n inverter 0 1 2 3 4 0 50 100 150 200 v cc =17v,15v, 13v collector current vs. collector-emitter voltage t j =25c collector current : i c [a] collector-emitter voltage : v ce [v] 0 1 2 3 4 0 50 100 150 200 v cc =17v,15v, 13v collector current vs. collector-emitter voltage t j =125c collector current : i c [a] collector-emitter voltage : v ce [v] 0 20 40 60 80 100 120 140 160 100 1000 t f t off t on switching time vs. collector current v dc =300v, v cc =15v, t j =25c switching time : t on , t r , t off , t f [ns] collector current : i c [a] 0 20 40 60 80 100 120 140 160 100 1000 t f t off t on switching time vs. collector current v dc =300v, v cc =15v, t j =125c switching time : t on , t r , t off , t f [ns] collector current : i c [a] 0 1 2 3 4 0 50 100 150 200 25c t j =125c forward voltage vs. forward current forward current : i f [a] forward voltage : v f [v] 0 20 40 60 80 100 120 140 160 10 100 i rr =125c t rr =25c i rr =125c t rr =125c reverse recovery characteristics t rr , i rr vs. i f reverse recovery current : i rr [a] reverse recovery time : t rr [ns] forward current : i f [a]
7mbp 100ra-060 igbt ipm 600v 6100a+db 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 igbt fwd transient thermal resistance thermal resistance : rth(j-c) [c/w] pulse width : p w [sec] 0 100 200 300 400 500 600 700 0 100 200 300 400 500 600 700 800 900 1000 reverse biased safe operating area v cc =15v, t j < 125c collector current : i c [a] collector-emitter voltage : v ce [v] 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 power derating for igbt (per device) collector power dissipation : p c [w] case temperature : t c (c) 0 20 40 60 80 100 120 140 160 0 50 100 150 200 power derating for fwd (per device) collector power dissipation : p c [w] case temperature : t c (c) 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 e rr e off e on switching loss vs. collector current v dc =300v, v cc =15v, t j =25c switching loss : e on , e off , e rr [mj/cycle] collector current : i c [a] 0 20 40 60 80 100 120 140 160 0 5 10 15 e rr e off e on switching loss vs. collector current v dc =300v, v cc =15v, t j =125c switching loss : e on , e off , e rr [mj/cycle]
7mbp 100ra-060 igbt ipm 600v 6100a+db 0 20 40 60 80 100 120 140 0 40 80 120 160 200 240 280 over current protection vs. junction temperature v cc =15 v over current protection level : i oc [a] junction temperature: t j [c]
7mbp 100ra-060 igbt ipm 600v 6100a+db n n outline drawing weight: 440g specification is subject to change without notice march 98
for more information, contact: collmer semiconductor, inc. p.o. box 702708 dallas, tx 75370 972-233-1589 972-233-0481 fax http://www.collmer.com
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