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| inchange semiconductor product specification silicon pnp power transistors 2N6031 description ? with to-3 package ? complement to type 2n5631 ? high collector sustaining voltage ?high dc current gain ? low collector saturation voltage applications ? for high power audio amplifier and high voltage switching regulator circuits applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -140 v v ceo collector-emitter voltage open base -140 v v ebo emitter-base voltage open collector -7 v i c collector current -16 a i cm collector current-peak -20 a i b base current -5.0 a p d total power dissipation t c =25 ?? 200 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2N6031 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.2a ;i b =0 -140 v v cesat-1 collector-emitter saturation voltage i c =-10a; i b =-1a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-16a ;i b =-4a -2.0 v v besat base-emitter saturation voltage i c =-10a; i b =-1a -1.8 v v be base-emitter on voltage i c =-8a ; v ce =-2v -1.5 v i cbo collector cut-off current v cb =ratedv cbo ; i e =0 -2.0 ma i ceo collector cut-off current v ce =-70v; i b =0 -2.0 ma v ce =ratedv cb -2.0 i cex collector cut-off current (v be(off) =1.5v) v ce =ratedv cb ; t c =150 ?? -7.0 ma i ebo emitter cut-off current v eb =-7v; i c =0 -5.0 ma h fe-1 dc current gain i c =-8a ; v ce =-2v 15 60 h fe-2 dc current gain i c =-16a ; v ce =-2v 4 c ob output capacitance i e =0 ; v cb =-10v ;f=0.1mhz 1000 pf f t transition frequency i c =-1a ; v ce =-20v ;f=0.5mhz 1.0 mhz inchange semiconductor product specification 3 silicon pnp power transistors 2N6031 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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