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  ST2310DHI high voltage fast-switching npn power transistor n new series, enhanced performance n fully insulated package (u.l. compliant) for easy mounting n integrated free wheeling diode n high voltage capability (> 1500 v) n high switching speed n tigther hfe control n improved ruggedness applications: n horizontal deflection high end tvs description the device is manufactured using diffused collector technology for more stable operation vs base drive circuit variations resulting in very low worst case dissipation. ? internal schematic diagram december 2002 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 1500 v v ceo collector-emitter voltage (i b = 0) 600 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 12 a i cm collector peak current (t p < 5 ms) 25 a i b base current 7 a p tot total dissipation at t c = 25 o c55w v isol insulation withstand voltage (rms) from all three leads to external heatsink 2500 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 isowatt218 r be =32 w typ. 1/6
thermal data r thj-case thermal resistance junction-case max 2.3 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 1500 v v ce = 1500 v t j = 125 o c 1 2 ma ma i ebo emitter cut-off current (i c = 0) v eb = 4 v 80 250 ma v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 800 ma 7 v v ce(sat) * collector-emitter saturation voltage i c = 7 a i b = 1.75 a 3 v v be(sat) * base-emitter saturation voltage i c = 7 a i b = 1.75 a 1.1 v h fe * dc current gain i c = 1 a v ce = 5 v i c = 7 a v ce = 1 v i c = 7 a v ce = 5 v 5.5 15 5 8.5 t s t f inductive load storage time fall time i c = 5 a f = 32 khz i b(on) = 0.9 a v be(off) = -2.5 v l bb(off) = 1.9 m h (see figure 1) 2 0.25 2.5 0.5 m s m s v f diode forward voltage i c = 7 a 1.5 2.2 v * pulsed: pulse duration = 300 m s, duty cycle 1.5 % safe operating area thermal impedance ST2310DHI 2/6
derating curve collector emitter saturation voltage dc current gain output characteristics base emitter saturation voltage dc current gain ST2310DHI 3/6
power losses switching time inductive load reverse biased soa figure 1: inductive load switching test circuit. ST2310DHI 4/6
dim. mm inch min. typ. max. min. typ. max. a 5.35 5.65 0.211 0.222 c 3.30 3.80 0.130 0.150 d 2.90 3.10 0.114 0.122 d1 1.88 2.08 0.074 0.082 e 0.75 0.95 0.030 0.037 f 0.75 0.95 0.030 0.037 f2 1.50 1.70 0.059 0.067 f3 1.90 2.10 0.075 0.083 f5 1.10 0.043 g 10.80 11.20 0.425 0.441 h 15.80 16.20 0.622 0.638 l 9 0.354 l1 20.80 21.20 0.819 0.835 l2 19.10 19.90 0.752 0.783 l3 22.80 23.60 0.898 0.929 l4 40.50 42.50 1.594 1.673 l5 4.85 5.25 0.191 0.207 l6 20.25 20.75 0.797 0.817 n 2.1 2.3 0.083 0.091 r 4.6 0.181 dia 3.5 3.7 0.138 0.146 p025c/b isowatt218 narrow leads mechanical data - weight : 4.9 g (typ.) - maximum torque (applied to mounting flange) recommended: 0.8 nm; maximum: 1 nm - the side of the dissipator must be flat within 80 m m ST2310DHI 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com ST2310DHI 6/6


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