unisonic technologies co., ltd ut60t03 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2010 unisonic technologies co., ltd qw-r502-183.b n-channel enhancement mode ? description the ut60t03 can provide excellent r ds(on) and low gate charge by using utc?s advanced trench technology. ? features * very simple drive requirement * very low gate charge * fast switching ? symbol 1.gate 3.source 2.drain ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UT60T03-TF3-R ut60t03l-tf3-r to-220f g d s tube ut60t03-tn3-r ut60t03l-tn3-r to-252 g d s tape reel ut60t03-tn3-t ut60t03l-tn3-t to-252 g d s tube
ut60t03 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-183.b ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 45 a pulsed drain current (note 2) i dm 120 a to-220f 56 power dissipation (t c =25c) to-252 p d 44 w junction temperature t j +150 strong temperature t stg -55 ~ +175 note:1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 2 .pulse width limited by safe operating area. ? thermal data parameter symbol ratings unit to-220f 62.5 junction to ambient to-252 ja 110 /w to-220f 2.66 junction to case to-252 jc 3.4 /w ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250a 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1 a gate-body leakage current i gss v gs = 20 v 100 na breakdown voltage temperature coefficient bv dss / t j reference to 25 , i d =1ma 0.026 v / on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1 3 v v gs =10 v, i d =20 a 12 static drain-source on-resistance(note 1) r ds(on) v gs =4.5 v, i d =15 a 25 m ? dynamic parameters input capacitance c iss 1135 output capacitance c oss 200 reverse transfer capacitance c rss v ds = 25v, v gs = 0v, f = 1.0mhz 135 pf switching parameters total gate charge q g 11.6 gate source charge q gs 3.9 gate drain charge q gd v ds = 20v, v gs = 4.5v, i d =20 a (note 1) 7 nc turn-on delay time t d(on) 8.8 turn-on rise time t r 57.5 turn-off delay time t d(off) 18.5 turn-off fall-time t f v gs =10v, v ds =15v, r d =0.75 ? , i d =20 a, r g =3.3 ? (note 1) 6.4 ns source- drain diode ratings and characteristics forward on voltage (note 1) v sd i s =45 a,v gs =0v 1.3 v reverse recovery time t rr 23.3 ns reverse recovery charge q rr i s =20 a, v gs =0 v,di/dt=100 a/ s 16 nc note: 1.pulse width 300us , duty cycle 2%. 2. essentially indepe ndent of operating temperature
ut60t03 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-183.b ? typical characteristics 10v 8.0v 6.0v 5.0v v g =4.0v t c =25 125 100 75 50 25 0 0 12 3 4 90 60 30 0 0 12345 drain current,i d (a) drain current,i d (a) drain to source voltage,v ds (v) drain to source voltage,v ds (v) typical output characteristics typical output characteristics t c =150 10v 8.0v 6.0v 5.0v i d =20a v g =10v 2 1.6 1.2 0.8 0.4 -50 25 100 175 i d =20a t c =25 80 60 40 20 0 35 7 911 on-resistance,r ds(on) (m ) on-resistance vs. gate voltage gate-to-source voltage,v gs (v) normalized, r ds(on) normalized on-resistance vs. junction temperature junction temperature,t j ( ) gate threshold voltage,v gs(th) (v) reverse drain current, i s (a)
ut60t03 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-183.b ? typical characteristics(cont.) gate to source voltage,v gs (v) capacitance (pf) 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.02 0.05 0.01 single pulse pulse width,t (s) effective transient thermal impedance normalized thermal response (r thja ) duty factor=t/t peak t j =p dm r thja +t c p dm t t 1000 100 10 1 0.1 1 10 100 maximum safe operating area drain current,i d (a) drain-to-source voltage,v ds (v) t c =25 single pulse 1ms dc 100ms 10ms 100 s
ut60t03 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-183.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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