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  2sC5022 silicon npn triple diffused application high voltage amplifier features high breakdown voltage v (br)ceo = 1500 v min outline 1. base 2. collector 3. emitter to-220fm 1 2 3 www.datasheet.co.kr datasheet pdf - http://www..net/
2sC5022 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 1500 v collector to emitter voltage v ceo 1500 v emitter to base voltage v ebo 6v collector current i c 20 ma collector peak current i c (peak) 40 ma collector power dissipation p c 2w junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector cutoff current i ces 10 m av ce = 1500 v, r be = 0 collector cutoff current i ceo 100 m av ce = 1500 v, r be = emitter cutoff current i ebo 10 m av eb = 6 v, i c = 0 dc current transfer ratio h fe 10 v ce = 5 v, i c = 1 ma collector to emitter saturation voltage v ce (sat) 5.0 v i c = 10 ma, i b = 2 ma www.datasheet.co.kr datasheet pdf - http://www..net/
2sC5022 3 4 3 2 1 0 ambient temperature ta ( c) collector power dissipation pc (w) 50 100 150 200 collector power dissipation vs. ambient temperature 100 50 20 10 0.5 0.2 0.1 100 200 500 1000 2000 5000 collector to emitter voltage v (v) ce collector current i (ma) c 1 shot pulse ta = 25 c ic(peak) i max c dc operation (tc = 25 c) 10 ms pw = 1 ms maximum safe operation area 20 10 0510 collector to emitter voltage v (v) ce collector current i (ma) c i = 0 b 1.4 ma 1.2 ma 0.8 ma 0.6 ma 0.4 ma 0.2 ma 1.8 ma 1.6 ma 2.0 ma 1.0 ma pulse test ta = 25 c typical output characteristics 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 collector current i (ma) c dc current transfer ratio h fe 75 c 25 c ta = ?5 c v = 5 v ce pulse test dc current transfer ratio vs. collector current www.datasheet.co.kr datasheet pdf - http://www..net/
2sC5022 4 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 collector current i (ma) c i / i = 5 pulse test c b 75 c 25 c ta = ?5 c collector to emitter saturation voltage ce(sat) v (v) collector to emitter saturation voltage vs. collector current 1 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 collector current i (ma) c i / i = 5 pulse test c b 75 c 25 c ta = ?5 c base to emitter saturation voltage be(sat) v (v) base to emitter saturation voltage vs. collector current 0.1 1 0.5 0 collector current i (ma) c base to emitter voltage v (v) be 30 10 3 1 0.3 ta = ?5 c 75 c 25 c v = 5 v pulse test ce collector current vs. base to emitter voltage 10 5 2 1 0.1 0.2 0.5 1 25 10 collector current i (ma) c gain bandwidth product f (mhz) t v = 20 v pulse test ce gain bandwidth product vs. collector current www.datasheet.co.kr datasheet pdf - http://www..net/
2sC5022 5 1 1 2 5 10 20 50 100 collector to base voltage v (v) cb collector output capacitance cob (pf) 2 5 10 20 50 i = 0 , f = 1mhz e collector output capacitance vs. collector to base voltage www.datasheet.co.kr datasheet pdf - http://www..net/
10.0 0.3 7.0 0.3 3.2 0.2 12.0 0.3 0.6 2.8 0.2 2.5 0.2 17.0 0.3 14.0 1.0 0.5 0.1 2.5 4.45 0.3 5.0 0.3 2.0 0.3 0.7 0.1 2.54 0.5 2.54 0.5 1.2 0.2 1.4 0.2 f hitachi code jedec eiaj weight (reference value) to-220fm conforms 1.8 g unit: mm www.datasheet.co.kr datasheet pdf - http://www..net/
cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 1999. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher strae 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: www.datasheet.co.kr datasheet pdf - http://www..net/


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