tm june 2007 fdd6n50f / fdu6n50f n-channel mosfet ?2007 fairchild semiconductor corporation fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 1 unifet tm fdd6n50f / fdu6n50f n-channel mosfet 500v, 5.5a, 1.15 features ?r ds(on) = 1.0 ( typ.)@ v gs = 10v, i d = 2.75a ? low gate charge ( typ. 15nc) ? low c rss ( typ. 6.3pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using failchild?s proprietary, planar stripe, dmos technology. this advance technology ha s been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power s upplies and active power factor correction. d g s g s d d-pak fdd series i-pak fdu series g d s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter ratings units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 5.5 a -continuous (t c = 100 o c) 2.4 i dm d r a i n c u r r e n t - p u l s e d (note 1) 22 a e as single pulsed avalanche energy (note 2) 270 mj i ar avalanche current (note 1) 5.5 a e ar repetitive avalanche energy (note 1) 8.9 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 o c) 89 w - derate above 25 o c0.71w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 1.4 o c/w r ja thermal resistance, junction to ambient 83 *when mounted on the minimum pad size recommended (pcb mount)
fdd6n50f / fdu6n50f n-channel mosfet fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdd6n50f FDD6N50FTM d-pak 380mm 16mm 2500 fdd6n50f fdd6n50ftf d-pak 380mm 16mm 2000 fdu6n50f fdu6n50ftu i-pak - - 70 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t j = 25 o c 500 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.15 - v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 2.75a - 1.0 1.15 g fs forward transconductance v ds = 40v, i d = 2.75a (note 4) -4.3-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 720 960 pf c oss output capacitance - 85 115 pf c rss reverse transfer capacitance - 6.3 9.5 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 6a v gs = 10v (note 4, 5) -1519.8nc q gs gate to source gate charge - 4.4 - nc q gd gate to drain ?miller? charge - 6.1 - nc t d(on) turn-on delay time v dd = 250v, i d = 6a r g = 25 (note 4, 5) -1744ns t r turn-on rise time - 28.3 66.6 ns t d(off) turn-off delay time - 33.4 76.7 ns t f turn-off fall time - 20.5 51 ns i s maximum continuous drain to source diode forward current - - 5.5 a i sm maximum pulsed drain to source diode forward current - - 22 a v sd drain to source diode forward voltage v gs = 0v, i sd = 5.5a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 5.5a di f /dt = 100a/ s (note 4) -85-ns q rr reverse recovery charge - 0.15 - c notes: 1: repetitive rating: pulse width limi ted by maximum junction temperature 2: l = 16mh, i as = 5.5a, v dd = 50v, r g = 25 , starting t j = 25c 3: i sd 5.5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c 4: pulse test: pulse width 300 s, duty cycle 2% 5: essentially independent of operating temperature typical characteristics
fdd6n50f / fdu6n50f n-channel mosfet fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.1 1 10 20 0.04 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 28 5678910 1 10 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 20 0.0 0.5 1.0 1.5 2.0 0.1 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0481216 0.6 1.2 1.8 2.4 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 0 300 600 900 1200 1500 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0481216 0 2 4 6 8 10 *note: i d = 6a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc]
fdd6n50f / fdu6n50f n-channel mosfet fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. maximum safe operating area vs. temperature figure 9. maximum drain current vs. case temperature figure 10. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 30 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 50 25 50 75 100 125 150 0.0 1.2 2.4 3.6 4.8 6.0 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1e-3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 1.4 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 3 t 1 p dm t 2
fdd6n50f / fdu6n50f n-channel mosfet fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdd6n50f / fdu6n50f n-channel mosfet fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard v oltage d rop v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period --------------------------
fdd6n50f / fdu6n50f n-channel mosfet fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 7 mechanical dimensions d-pak dimensions in millimeters
fdd6n50f / fdu6n50f n-channel mosfet fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 8 mechanical dimensions i-pak dimensions in millimeters
fdd6n50f / fdu6n50f n-channel mosfet fdd6n50f / fdu6n50f rev. a www.fairchildsemi.com 9 trademarks the following are registered and unregistered trademarks and servic e marks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, funct ion, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worl dwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failur e to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? got? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? motion-spm? optologic ? optoplanar ? pdp-spm? power220 ? power247 ? poeweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this data sheet contains the design s pecifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contai ns preliminary data; supplementary data will be published at a later date. fairchild se miconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet c ontains final specificati ons. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been dis- continued by fairchild semiconductor. the datasheet is printed for refer- ence information only. tm rev. i29 tm
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