120 n-channel enhancement mode field transistor features 120v , 10a , r ds(on) =120m @v gs = 5 v super high dense cell design for extremely low r ds(on) . high power and current handling capability. to-251 & to-252 package. absolute maximum ratings (tc=25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds v gate-source voltage v gs 20 v drain current-continuous -pulsed i d 10 a i dm 40 a drain-source diode forward current i s 10 a maximum power dissipation p d w operating and storage temperature range t j ,t stg -65 to 175 c thermal characteristics thermal resistance, junction-to-case thermal resistance, junction-to-ambient r / jc r / ja 3 50 /w c /w c ? @tc=25 c derate above 25 c 50 0.3 w/ c s g d ceu series to-252aa(d-pak) ced series to-251(l-pak) g g s s d d 6 ced1012l/CEU1012L 6-7
electrical characteristics (t c =25 c unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v,i d =250 a 120 v zero gate voltage drain current i dss v ds =120v, v gs =0v 25 a gate-body leakage i gss v gs = 20v, v ds =0v 100 na on characteristics a gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 13 v drain-source on-state resistance r ds(on) v gs =5v, i d =10a 120 m ? on-state drain current i d(on) v gs =10v, v ds =10v 10 a 3 s forward transconductance fs g v ds =10v, i d =5a dynamic characteristics b input capacitance c iss c rss c oss output capacitance reverse transfer capacitance v ds =25v, v gs =0v f =1.0mh z 960 p f 178 42 p f p f 65 85 switching characteristics b turn-on delay time rise time turn-off delay time t d(on) t r t d(off) t f fall time v dd =30v, i d = 10a, v gs =5v, r gen =9 ? 50 ns ns ns ns 130 80 90 total gate charge gate-source charge gate-drain charge q g q gs q gd v ds =96v, i d =10a, v gs =5v 33 nc nc nc 6 27.5 5 16 100 1.6 6-8 9.5 45 60 ced1012l/CEU1012L
parameter symbol condition min typ max unit electrical characteristics (t c =25 c unless otherwise noted) drain-source diode characteristics diode forward voltage v sd v gs =0v,is=10a 1.2 v a notes b.guaranteed by design, not subject to production testing. a.pulse test:pulse width 300 3 s, duty cycle 2%. figure 1. output characteristics figure 2. transfer characteristics figure 4. on-resistance variation with drain current and temperature figure 3. capacitance v ds , drain-to source voltage (v) v gs , gate-to-source voltage (v) v ds , drain-to-source voltage (v) i d , drain current(a) c, capacitance (pf) drain-source, on-resistance i d , drain current (a) i d , drain current (a) [ [ 6 25 c -55 c 1.3 1.2 1.1 1.0 0.9 0.8 0 0 5 10 15 20 25 v gs =10v tj=125 c r ds(on) , normalized ciss coss crss 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 6-9 0.86 ced1012l/CEU1012L 12 10 8 6 4 2 0 012 3 4 5 6 v gs =3v v gs =10,9,8,7,6,5,4v -55 c 25 c 125 c 20 15 10 5 0 45 6 7 89
ced1012l/CEU1012L figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature vth, normalized gate-source threshold voltage g fs , transconductance (s) v gs , gate to source voltage (v) bv dss , normalized drain-source breakdown voltage is, source-drain current (a) figure 7. transconductance variation with drain current i ds , drain-source current (a) figure 9. gate charge qg, total gate charge (nc) figure 10. maximum safe operating area v ds , drain-source voltage (v) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage (v) tj, junction temperature ( c) tj, junction temperature ( c) i d , drain current (a) 6-10 6 10 2 4 6 8 12 0 0 5 10 15 20 v ds =10v 20.0 10.0 0.1 1 0.4 0.6 0.8 1.0 1.2 1.4 v gs =0v 90 10 0.5 1 110 120300 v gs =10v single pulse tc=25 c r ds ( on) l im it dc 10ms 1 ms 100 3 s 10 3 s -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 id=250 3 a 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250 3 a 10 8 6 4 2 0 06 12 18 24 30 36 42 48 v ds =96v i d =10a
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