tm ?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com FDA8440 rev. a FDA8440 n-channel powertrench ? mosfet march 2007 FDA8440 n-channel powertrench ? mosfet 40v, 100a, 2.1m features ?r ds(on) = 1.46m ( typ.)@ v gs = 10v, i d = 80a ?q g(tot) = 345nc (typ.)@ v gs = 10v ? low miller charge ? low qrr body diode ? uis capability (single pulse and repetitive pulse) ? 160a guarantee for 2 sec ?rohs compliant application ? automotive engine control ? powertrain management ? motors, solenoids ? electronic steering ? integrated starter/ alternator ? distributed power architectures and vrms ? primary switch for 12v systems mosfet maximum ratings thermal characteristics d g s gs d to-3pn symbol parameter ratings units v dss drain to source voltage 40 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 145 o c) 100 a - continuous (t a = 25 o c, v gs = 10v, r ja = 40 o c/w ) 30 a - pulsed 500 a e as single pulsed avalanche energy (note 1) 410 mj p d power dissipation 250 w derate above 25 o c 1.67 mw/ o c t j, t stg operating and storage temperature -55 to +175 o c r jc thermal resistance, junction to case 0.6 o c/w r ja thermal resistance, junction to ambient (note 2) 40 o c/w t c = 25 o c unless otherwise noted
2 www.fairchildsemi.com FDA8440 rev. a FDA8440 n-channel powertrench ? mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1: starting t j = 25 c, l = 200 h, i as = 64a, v dd = 36v, v gs = 10v. 2: pulse width = 100s device marking device package reel size tape width quantity FDA8440 FDA8440 to-3pn n/a n/a 30units symbol parameter conditions min typ max units off characteristics bv dss drain to source breakdown voltage v gs = 0v, i d = 250 a 40 -- -- v i dss zero gate voltage drain current v ds = 32v v gs = 0 v -- -- 1 a t c = 150 o c -- -- 250 a i gss gate to body leakage current v gs = 20v -- -- 100 na on characteristics v gs(th) gate to source threshold voltage v ds = v gs , i d = 250 a 1 -- 3 v r ds(on) static drain-source on-resistance v gs = 4.5v, i d = 80a -- 1.56 2.2 m v gs = 10v, i d = 80a -- 1.46 2.1 v gs = 10v, i d = 80a, t c = 175 o c -- 2.82 4.1 dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 18600 24740 pf c oss output capacitance -- 1840 2450 pf c rss reverse transfer capacitance -- 1400 2100 pf r g gate resistance v gs = 0.5v, f = 1mhz -- 1.1 -- q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 20v i d = 80a i g = 1.0ma -- 345 450 nc q g(2) threshold gate charge v gs = 0v to 2v -- 32.5 -- nc q gs gate to source gate charge -- 49 -- nc q gs2 gate charge threshold to plateau -- 42 -- nc q gd gate to drain ?miller? charge -- 74 -- nc switching characteristics (v gs = 10v) t on turn-on time v dd = 20v,i d = 80a v gs = 10v, r gen = 7 -- 175 360 ns t d(on) turn-on delay time -- 43 95 ns t r rise time -- 130 275 ns t d(off) turn-off delay time -- 435 875 ns t f fall time -- 290 590 ns t off turn-off time -- 730 1470 ns drain-source diode characteristics and maximum ratings v sd source to drain diode voltage i sd = 80a -- -- 1.25 v i sd = 40a -- -- 1.0 v t rr reverse recovery time i sd = 75a, di sd /dt = 100a/ s -- 59 -- ns q rr reverse recovery charge i sd = 75a, di sd /dt = 100a/ s -- 77 -- nc
3 www.fairchildsemi.com FDA8440 rev. a FDA8440 n-channel powertrench ? mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 0246 1 10 100 -55 o c 150 o c * notes : 1. v ds = 20v 2. 250 s pulse test 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 400 0.1 1 1 10 100 0.4 * notes : 1. 250 s pulse test 2. t c = 25 o c v gs = 10.0 v 7.0 v 5.0 v 3.5 v 3.0 v 2.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 0.04 400 0.3 0.6 0.9 1.2 1 10 100 1000 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c notes: 1. v gs = 0v 2. 250 s pulse test 0 50 100 150 200 250 1.45 1.50 1.55 1.60 * note : t j = 25 o c v gs = 4.5v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 0 6000 12000 18000 24000 30000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 20 0 100 200 300 400 0 2 4 6 8 10 * note : i d = 80a v ds = 25v v ds = 20v v ds = 15v v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com FDA8440 rev. a FDA8440 n-channel powertrench ? mosfet 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 1e-3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z jc (t) = 0.6 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. unclamped inductive switching capability -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 * notes : 1. v gs = 10v 2. i d = 80a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 0.1 1 10 100 1000 10000 1 10 100 t j = 25 o c t j = 150 o c t av , time in avalanche[ms] i as , avalanche current(a) figure 10. safe operating area figure 11. transient thermal response curve t 1 p dm t 2 110 0.1 1 10 100 1000 50 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 100ms 5000
5 www.fairchildsemi.com FDA8440 rev. a FDA8440 n-channel powertrench ? mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com FDA8440 rev. a FDA8440 n-channel powertrench ? mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com FDA8440 rev. a FDA8440 n-channel powertrench ? mosfet mechanical dimensions dimensions in millimeters to-3pn
8 www.fairchildsemi.com FDA8440 rev. a FDA8440 n-channel powertrench ? mosfet trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make chang es without further notice to any products herein to improve reliability, function or design . fairchild does not assume any liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specificatio ns do not expand the terms of fairchi ld?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instru ctions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pop? power220 ? power247 ? poweredge? powersaver? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? ? tinyboost? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information formative or in design this data sheet contains the design s pecifications for product development. specifications may c hange in any manner without notice. preliminary first production this datasheet contai ns preliminary data; supplementary data will be published at a later date. fairchild se miconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet c ontains final specificati ons. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specifications on a product that has been dis- continued by fairchild se miconductor.the datasheet is printed for refer- ence information only. rev. i24 tm gto? powertrench ? tinybuck? tm
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