f red ultr afast s oft reco ver y diode, 8 a fe atures ultrafast recovery ultrasoft recovery v er y low i rrm v er y low q rr specified at operating conditi ons lead ( pb )- free designed and qualified for industrial level benef its reduced rfi and emi reduced power loss in diode and switch ing transistor higher frequency operation reduced snubbing reduced parts count descri p t ion pro duct sum mar y v r v f at 8 a at 25 o c i f ( av ) 8 a t rr ( typical ) t j ( maximum ) q rr ( typical ) di ( rec ) m / dt ( typica l ) at 125 o c i rrm ( typical ) absol ute maxim um ra tings p arameter symbol test conditions v 8 a 130 32 maximum pow er dissipation 73 w 29 operating junct ion and storage tempe rature range t , t j stg - 55 to + 150 tc = 100 oc tc = 100 oc tc = 25 oc p d i f r m i f s m i f v r a v a i l a b l e r o h s * c o m p l i a n t c a t h o d e t o a n o d e v o l t a g e m a x i m u m c o n t i n u o u s f o r w a r d c u r r e n t s i n g l e p u l s e f o r w a r d c u r r e n t m a x i m u m r e p e t i t i v e f o r w a r d c u r r e n t s e m i c o n d u c t o r n - h fa 0 8 t b 1 2 0 r o h s r o h s p a g e 1 o f 6 n e l l h i g h p o w e r p r o d u c t s 12 00 v 3.3 v 30 ns 150 o c 140 nc 85 a / s 4.5 a c 1200 units v alu es h fa 0 8 t b 1 2 0 i s a s t a t e o f t h e a r t u l t r a f a s t d i o d e . e m p l o y i n g t h e l a t e s t i n e p i t a x i a l c o n s t r u c t i o n a n d a d v a n c e d p r o c e s s i n g t e c h n i q u e s i t f e a t u r e s a s u p e r b c o m b i n a t i o n o f c h a r a c t e r i s t i c s w h i c h r e s u l t i n p e r f o r m a n c e w h i c h i s u n s u r p a s s e d b y a n y r e c t i f i e r p r e v i o u s l y a v a i l a b l e . w i t h b a s i c r a t i n g s o f 1 2 0 0 v a n d 8 a c o n t i n u o u s c u r r e n t , t h e h fa 0 8 t b 1 2 0 i s e s p e c i a l l y w e l l s u i t e d f o r u s e a s t h e c o m p a n i o n d i o d e f o r i g b t s a n d m o s f e t s . i n a d d i t i o n t o u l t r a f a s t r e c o v e r y t i m e , t h e f r e d p r o d u c t l i n e f e a t u r e s e x t r e m e l y l o w v a l u e s o f p e a k r e c o v e r y c u r r e n t ( i ) r r m a n d d o e s n o t e x h i b i t a n y t e n d e n c y t o s n a p - o f f d u r i n g t h e t p o r t i o n o f r e c o v e r y . t h e f r e d f e a t u r e s c o m b i n e b t o o f f e r d e s i g n e r s a r e c t i f i e r w i t h l o w e r n o i s e a n d s i g n i f i c a n t l y l o w e r s w i t c h i n g l o s s e s i n b o t h t h e d i o d e a n d t h e s w i t c h i n g t r a n s i s t o r. t h e s e f r e d a d v a n t a g e s c a n h e l p t o s i g n i f i c a n t l y r e d u c e s n u b b i n g , c o m p o n e n t c o u n t a n d h e a t s i n k s i z e s . t h e f r e d h fa 0 8 t b 1 2 0 i s i d e a l l y s u i t e d f o r a p p l i c a t i o n s i n p o w e r s u p p l i e s a n d c o n v e r s i o n s y s t e m s ( s u c h a s i n v e r t e r s ) , m o t o r d r i v e s , a n d m a n y o t h e r s i m i l a r a p p l i c a t i o n s w h e r e h i g h s p e e d , h i g h e f f i c i e n c y i s n e e d e d . r e c o v e r y w w w . n e l l s e m i . c o m anode 1 3 cathode cathode 2 t o - 2 2 0 a c
therma l - mec han ical spe cif ica tio ns p ar ameter symbol test conditions min . typ . max . units lead temperature t lead 0.063" from case (1.6 mm ) for 10 s - - therma l resistance , junction to case r thjc - - k / w therma l resistance , junction to ambie nt r thja typical socket mount thermal resistance , case to heatsin k r thcs mounting surface , flat , smoo th and greased weight - - mounting torque 6.0 (5.0) - 12 (10) kgf cm . . ( lbf in ) m a r k i n g d e v i c e c a s e s t y l e t o - 2 2 0 a c h f a 0 8 t b 1 2 0 o c s e m i c o n d u c t o r r o h s r o h s p a g e 2 o f 6 n e l l h i g h p o w e r p r o d u c t s 1.7 40 0.25 - - 300 g - 6 oz . - 0.21 - - n - h fa 0 8 t b 1 2 0 oc unless otherw ise spec ified ) = 25 p ar ameter symbol tes t condition s v - = 16 a i f - - a - - 1200 2.3 10 0.31 - 135 pf 11 e lectri cal specif ica t ions ( t j cathode to anode breakdown volta ge v br = 100 a i r maximum forwa rd voltage = 8.0 a i f = 8.0 a , t i = 125 oc f j maximum reverse leakage curre nt i rm junction capacitance 2.5 3.3 - - oc unless otherw ise spec ified ) = 25 p ar ameter symbol tes t conditions ns - - 63 105 dynami c recove r y charac terist ics perleg ( t j reverse recov ery time i f = 1.0 a, di /dt = -200 a/s, v =30 v, t = 25 c f r j 30 - a - 6.1 4.5 - nc - 335 140 - peak recovery c urrent reverse recov ery charge t rr t rr1 t rr2 i rrm1 i rrm2 q rr1 q rr2 t = 125 oc j t = 125 oc j t = 125 oc j t = 25 oc j t = 25 oc j t = 25 oc j i = 8.0 a f di /dt = -200 a/s f v = 200 v r - v fm c t v = 2 0 0 v r t = 1 2 5 c , v = v r a t e d j r r v = v r a t e d r r i = 0 . 5 a , i = 1 . 0 a , i = 2 5 0 m a ( r g # 1 c k t ) f r r r 28 - 3.0 units max . typ . min . units max . typ . min . a/ s - 85 133 - t = 125 oc j t = 25 oc j - - nh 8.0 series inductance l s 2 0 1 0 0 0 - - measured lead to lead 5 mm from pack age body 160 8 95 11 880 380 3.1 4.1 35 peak rate of fall of recovery current during t b dl /dt2 (rec)m dl /dt1 (rec)m w w w . n e l l s e m i . c o m
s e m i c o n d u c t o r r o h s r o h s p a g e 3 o f 6 n e l l h i g h p o w e r p r o d u c t s 0. 01 0. 1 1 1 0 10 0 1000 300 900 600 10 10 0 j u n c t i o n c a p a c i t a n c e - c ( p f ) t 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 single pulse ( ther mal resistance ) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 t = 1 5 0 o c j t = 1 2 5 o c j t = 2 5 o c j fig. 1 maximum forward v oltage drop characteristics f or w ar d v ol t a ge dr op ( v ) - v fm 1 1 0 10 0 4 2 0 10 8 6 t = 1 5 0 o c j t = 1 2 5 o c j t = 10 0 o c j t = 25 o c j 1200 0 reverse v oltage - v (v) r fig .2 t ypical v alues of rever se current vs . re verse v oltage t = 2 5 o c j 10 1 10000 100 reverse v ol t a ge ( v ) - v r 1 t h e r m a l i m p e d a n c e - z ( c / w ) t h j c n o t e s : 1 . d u t y f a c t o r d = t 1 / t 2 2 . p e a k t = p d m x z t h j c + t c j p d m 1 t 2 t fig .3 t ypical junction c apacitance vs . reverse v oltage fig .4 maximum the rmal impedance z thjc characteris tics 10 1 n - h fa 0 8 t b 1 2 0 rectang ular pulse durati on ( sec) - t 1 w w w . n e l l s e m i . c o m
fig .5 typical reverse reco very time vs . di /dt f f fig .6 typical recove ry current vs . di / dt f fig. 7 typical stored charge vs . di /dt f fig .8 typical di ( rec ) m / dt vs . di / dt f s e m i c o n d u c t o r r o h s r o h s p a g e 4 o f 6 n e l l h i g h p o w e r p r o d u c t s f 160 120 20 100 1000 140 100 60 i f = 8 a i f = 80 4 a 1200 0 100 1000 i f = 8 a i f = 4 a v = 160 v r t = 125 j o c t = 25 j o c 400 1000 600 200 = 160 v r t = 125 j o c t = 25 j o c 800 20 16 0 100 1000 i f = 8 a i f = 4 a 4 12 1000 100 100 1000 i f = 8 a i f = 4 a 10 = 160 v r t = 125 j o c t = 25 j o c v = 160 v r t = 125 j o c t = 25 j o c 8 f f f f q ( n c ) r r t ( n s ) r r i ( a ) r r d i m / d t ( a / s ) ( r e c ) n - h fa 0 8 t b 1 2 0 w w w . n e l l s e m i . c o m
fig .9 reverse recovery parameter test circuit fig. 10 reverse recovery waveform and definition s irfp 250 d . u . t . l = 70 h v r = 200 v 0.01 g d s di f / dt adjust q rr 0.5 i rrm di ( rec ) m / dt 0.75 i rrm i rrm t rr t b t a i f di f / dt 0 (1) (2) (3) (4) (5) (1) di / dt - rate of change of current f through zero crossing (2) i rrm - peak re v erse reco v er y current (3) t - re v erse reco v er y time measured rr from z ero crossing point of negativ e going i to point where a line passing f through 0.75 i rrm and 0.50 i rrm e xtrapolated to zero current . (4) q - area under cur v e defined by t rr rr i rrm x i rr rrm 2 q = rr (5) di / - dt peak rate of change of ( rec ) m current dur ing t b por tion of t rr s e m i c o n d u c t o r r o h s r o h s p a g e 5 o f 6 n e l l h i g h p o w e r p r o d u c t s and t n - h fa 0 8 t b 1 2 0 w w w . n e l l s e m i . c o m
s e m i c o n d u c t o r r o h s r o h s n e l l h i g h p o w e r p r o d u c t s p a g e 6 o f 6 n - h fa 0 8 t b 1 2 0 or de ring in forma tion t abl e 1 - fred family 2 - nell semiconductors product 3 - current rating (08 = 8 a ) 4 - package : tb = t o -220 ac 5 - v oltage rating (120 = 1200 v ) device code t o -220 ac package outline anode cathode 0.404 [10.26] 0.393 [9.98] ?0.153 [3.89] ?0.149 [3.78] 0.1 14 [2.90] 0.102 [2.59] 0.508 [12.90] 0.492 [12.50] 0.154 [3.91] 0.134 [3.40] 0.531 [13.49] 0.515 [13.08] 0.100 [2.54] typ 0.204 [5.18] 0.196 [4.98] 0.057 [1.45] 0.047 [1.19] 0.034 [0.86] 0.030 [0.76] cathode 0.186 [4.72] 0.174 [4.42] 0.058 [1.47] 0.047 [1.19] 0.362 [9.19] 0.354 [8.99] 0.1 10 [2.79] 0.099 [2.51] 0.018 [0.46] 0.014 [0.36] 3 1 2 h fa 0 8 t b 1 2 0 n - 4 5 w w w . n e l l s e m i . c o m
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