unisonic technologies co., ltd mmbta56 pnp silicon transistor www.unisonic.com.tw 1 of 5 copyright ? 2005 unisonic technologies co., ltd qw-r206-090,b amplifier transistor ? features * collector-emitter voltage: v ceo =-80v * collector dissipation: p d =350mw sot-23 1 2 3 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing mmbta56l-ae3-r MMBTA56G-AE3-R sot-23 e b c tape reel ? marking
mmbta56 pnp silicon transistor unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r206-090,b ? absolute maximum ratings (t a =25 ) parameter symbol ratings unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -80 v emitter-base voltage v ebo -4 v collector current - continuous i c -500 ma total device dissipation(note 1) derate above 25 p d 350 2.8 mw mw/ junction temperature t j +150 storage temperature t stg -55 ~ +150 note 1. device mounted on fr-4=1.61.60.06 in 2. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol max unit thermal resistance, junction to ambient ja 357 /w ? electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-emitter breakdown voltage (note 1) bv ceo i c =-1.0ma, i b =0 -80 v emitter-base breakdown voltage bv ebo i e =-100 a, ic=0 -4 v collector cutoff current i ces v ce =-60v, i b =0 -0.1 a collector cutoff current i cbo v cb =-80v, i e =0 -0.1 a on characteristics dc current gain h fe i c =-10ma, v ce =-1v i c =-100ma, v ce =-1v 100 100 collector-emitter satu ration voltage v ce(sat) i c =-100ma, i b =-10ma -0.25 v base-emitter on voltage v be(on) i c =-100ma, v ce =-1v -1.2 v small-signal characteristics current gain bandwidth product (note2) f t i c =-10ma, v ce =-2v, f=100mhz 100 mhz note 1: pulse test: pw 300 s, duty cycle 2% 2: f t is defined as the frequency at wh ich ihfei extrapolates to unity.
mmbta56 pnp silicon transistor unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r206-090,b ? switching time test circuits
mmbta56 pnp silicon transistor unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r206-090,b ? typical characteristics current-gain bandwidth product, f t (mhz) capacitance, c (pf) time, t (ns) -5.0 10 -7.0 -20 -30 -50 -100-200-300-500 20 30 70 300 1.0k switching time 50 500 t f -10 -70 collector current, i c (ma) 100 200 700 t s t r v cc =-40v i c /i b =10 i b1 =i b2 t j =25 t d @v be(off) =-0.5v collector-emitter voltage, v ce (v) collector current, i c (ma) -700 -1.0 -5.0 -20 active-region safe operating area t a =25 current limit thermal limit second breakdown limit mmbta55 mmbta56 t c =25 1.0ms 1 0 0 s -2.0-3.0 -7.0-10 -30 -50 -70-100 -10 -20 -30 -50 -70 -100 -200 -300 -500 -1.0k 1.0s dc current gain, h fe voltage, v
mmbta56 pnp silicon transistor unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r206-090,b ? typical characteristics(cont.) collector-emitter voltage, v ce (v) temperature coefficient, r vb (mv/ ) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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