unisonic technologies co., ltd 60n06 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2012 unisonic technologies co., ltd. qw-r502-121.c 60a, 60v n-channel power mosfet ? description the utc 60n06 is n-channel enhancement mode power field effect transistors with stabl e off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. ? features * r ds(on) = 18m ? @ v gs = 10 v * ultra low gate charge ( typical 39nc ) * fast switching capability * low reverse transfer capacitance (c rss = typical 115pf ) * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 60n06l-ta3-t 60N06G-TA3-T to-220 g d s tube 60n06l-tf3-t 60n06g-tf3-t to-220f g d s tube 60n06l-tq2-r 60n06g-tq2-r to-263 g d s tape reel 60n06l-tq2-t 60n06g-tq2-t to-263 g d s tube note: pin assignment: g: gate d: drain s: source
60n06 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-121.c ? absolute maximum ratings parameter symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gs 20 v continuous drain current t c = 25c i d 60 a t c = 100c 39 a drain current pulsed (note 2) i dm 120 a avalanche energy single pulsed (note 3) e as 1000 mj repetitive (note 2) e ar 180 mj power dissipation (t c =25c) to-220 p d 100 w to-220f 70.62 to-263 54 junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repeativity rating: pulse wi dth limited by junction temperature 3. l=0.61mh, i as =60a, r g =20 ? , starting t j =25 ? thermal data parameter symbol ratings unit junction to ambient to-220/to-220f ja 62.5 c/w to-263 110 junction to case to-220 jc 1.25 c/w to-220f 1.77 to-263 2.31 ? electrical characteristics (t c = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 60 v drain-source leakage current i dss v ds = 60 v, v gs = 0 v 1 a gate-source leakage current forward i gss v gs = 20v, v ds = 0 v 100 na reverse v gs = -20v, v ds = 0 v -100 na on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10 v, i d = 30a 14 18 m ? dynamic characteristics input capacitance c iss v gs = 0v, v ds =25v, f = 1mhz 2000 pf output capacitance c oss 400 pf reverse transfer capacitance c rss 115 pf switching characteristics turn-on delay time t d ( on ) v dd =30v, i d =60a, r l =0.5 ? , v gs =10v (note 2, 3) 12 30 ns rise time t r 11 30 ns turn-off delay time t d ( off ) 25 50 ns fall time t f 15 30 ns total gate charge q g v ds = 30v, v gs = 10 v i d = 60a (note 2, 3) 39 60 nc gate-source charge q gs 12 nc gate-drain charge (miller charge) q gd 10 nc
60n06 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-121.c ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit source-drain diode ratings and characteristics diode forward voltage v sd v gs = 0 v, i s = 60a 1.6 v continuous source current i s 60 a pulsed source current i sm 120 reverse recovery time t r r i s =60a, v gs =0v, di f /dt=100a/ s 60 ns reverse recovery charge q rr 3.4 c note: 1. i sd 60a, di/dt 300a/ s, v dd bv dss , starting t j =25 2. pulse test: pulse width 300 s, duty cycle 2% 3. essentially independent of operating temperature.
60n06 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-121.c ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt waveforms
60n06 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-121.c ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
60n06 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-121.c ? typical characteristics drain current, i d (a) drain current, i d (a) gate-to-source voltage, v gs (v) 20 03050 transconductance, g fs (s) transconductance 10 50 40 20 70 0 40 drain current, i d (a) 40 060 0.012 on-resistance, r ds(on) ( ) on-resistance vs. drain current 20 0.016 0.008 0.004 0.020 0 80 60 30 10 tc = -55 25 125 v gs = 10v 100 drain-to-source voltage, v ds (v) 20 040 capacitance, c (pf) capacitance 10 2000 1000 3000 0 30 total gate charge, q g (nc) 20 0 gate-to-source voltage, v gs (v) gate charge 10 4 2 10 0 30 2500 1500 500 ciss v gs = 10v i d = 60a 40 coss crss 6 8
60n06 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-121.c ? typical characteristics(cont.) on-resistance, r ds(on) ( ? ) (normalized) source current, i s (a) drain current, i d (a) drain current, i d (a) square wave pulse duration (sec) 10 -4 normalized thermal transient impedance 10 -5 0.1 0. 01 10 -3 10 -2 1 2 10 -1 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 13
60n06 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-121.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
