page1of6 semiconductor 4pt series rohs rohs sensitive gate scrs, 4a symbol i t rms ( ) rms on state current full sine wave 4 i tsm non repetitive surge peak on state current full cycle t initial = 25 c) ( , j a i t 2 i t value for fusing 2 4.5 a s 2 di dt / critical rate of rise of on state current 50 i gm peak gate current p g av ( ) average gate power dissipation t stg storage temperature range operating junction temperature range 40 + 150 to 40 + 125 to oc a s / aa w unit value 30 33 f=50hz f=60hz t=20ms t=16.7ms t =10ms p f=60hz t =125oc j t =125oc j t =125oc j t =20s p t j absolute maximum ratings parameter test conditions main features symbol value unit i t(rms) v /v drm rrm i gt 4 a v a 10 00 to 2 600 to 800 description thanks to highly sensitive triggering levels, the 4pt series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, capacitive discharge ignitions, overvoltage crowbar protection for low power supplies among others. available in through-hole or surface-mount packages, v 600 and800 t =125oc j v drm v rrm repetitivepeakoffstatevoltage repetitivepeakreversevoltage they provide an optimized performance in a limited space area. (180conductionangle) 1.2 0.2 averageonstatecurrent (180conductionangle) i t av ( ) 2.5 a 1 2 3 1 2 3 2 2 2 1 2 3 to-220ab (non-lnsulated) to-251 (i-pak) to-252 (d-pak) i = 2xl , t ns g gt r 100 1 2 3 to-220ab (lnsulated) (4ptxxf) (4ptxxg) (4ptxxa) (4ptxxai) (g)3 1(a1) (a2) 2 www.nellsemi.com tc=115c tc=110c to251/to252/to220ab to220abinsulated to251/to252/to220ab to220abinsulated tc=115c tc=110c
page2of6 semiconductor 4pt series rohs rohs 4ptxxxx unit i gt v gd i h ma dv dt / v tm i drm i rrm ma i l v =12v,r =30 d l v =v ,r =3.3k d drm l r =220,t =125c gk j i =50ma, t r =1k gk i =1ma, g r =1k gk v =67%v , ,t =125c d drm j r =1k gk 0.8 0.1 5 6 10 a vv ma v/s i =8a, t t =380s p t =125c j t =25c j t =25c j v a electrical specifications ( t j = 25 ) unless otherwise specified oc test conditions symbol v =v ,v =v d drm r rrm 1.6 5 0.5 r =220 gk min. max. max. min. max. min. min. max. max. max. 10 200 thermal resistance r th j c ( ) junction to case dc ( ) r th j a ( ) junction to ambient 2.8 60 c/w c/w unit value symbol parameter ipak/dpak/to220ab to252(dpak) to220ab to251(ipak) 70 100 s=0.5cm 2 v gt product selector part number voltage x x ( ) sensitivity 600 v a 70~200 1000 v 4ptxxas/4ptxxals 4ptxxfs 4ptxxgs v v v v vv 800 v v vv package to220ab ipak dpak www.nellsemi.com v v v v v v v v v v v v 4ptxxa03/4ptxxal03 v v v v v v v v v vv v v v vv v v vv v v v v 4ptxxa05/4ptxxal05 4ptxxf03 4ptxxf05 4ptxxf06 4ptxxf08 4ptxxg03 4ptxxg05 4ptxxg06 4ptxxg08 4ptxxa06/4ptxxal06 4ptxxa08/4ptxxal08 dpak dpak dpak dpak ipak ipak ipak ipak to220ab to220ab to220ab to220ab a 10~30 a 20~30 a 30~60 a 50~80 a 70~200 a 10~30 a 20~30 a 30~60 a 50~80 a 70~200 a 10~30 a 20~30 a 30~60 a 50~80
page3of6 semiconductor rohs rohs 4pt series ordering information scheme scr series package type current voltage code igt sensitivity a to220ab(noninsulated) = ai to220ab(insulated) = 4=4a,i t(rms) 03=10~30a 4 pt 06 - s 06=600v f=to251(ipak) g=to252(dpak) 08=800v fig. maximum average power dissipation versus 1 on state current fig.2 average and dc onstate current versus case temperature =180 i (a) t(av) 360 p w ( ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 25 50 75 100 125 =180 dc t case (c) i (a) t(av) 0.5 0.0 www.nellsemi.com ordering information 4ptxxayy 4ptxxayy ordering type marking package weight base q , ty delivery mode to220ab 2.0g 50 tube 4ptxxaiyy 4ptxxaiyy 2.3g 50 tube 4ptxxfyy 4ptxxfyy to251(ipak) 0.40g 80 4ptxxgyy 4ptxxgyy 0.38g 80 tube to252(dpak) to220ab(insulated) tube 05=20~50a 06=30~60a 08=50~80a s=70~200a to220ab insulated to251/to252 to220ab note : xx voltage yy sensitivity = , =
semiconductor rohs rohs page4of6 i ,i ,i [tj]/i ,i ,i [tj=25 c] gt h l gt h l 0 1 2 3 4 5 0.01 0.10 10.00 2 6 8 200 600 1000 0 400 800 0 0 4 2 4 6 1400 1800 1200 1600 4pt series 40 20 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 fig.5 relative variation of gate trigger current andholdingcurrentversusjunction temperature fig.6 relative variation of holding current versusgatecathoderesistance (typicalvalues) 1 e-2 1 e-1 1 e+0 1 e+1 tj=125 c v =0.67xv d drm r (k ) gk 2000 1.00 dv/dt[r ]/dv/dt[r =220 ] gk gk c (nf) gk v =0.67xv d drm t =125 c j r gk =220 22 8 10 12 14 16 18 20 10 fig.7 relative variation of dv/dt immunity versusgatecathoderesistance (typicalvalues) fig.8 relative variation of dv/dt immunity versusgatecathodecapacitance (typicalvalues) dv/dt[c ]/dv/dt[r =220 ] gk gk i [r ]/i [r =1k h gk h gk tj=25 c r (k) gk t j (c) l il hand r =1k gk i gt www.nellsemi.com fig.3 average and dc onstate current versus ( ambient temperature dpak) fig. relative variation of thermal impedance 4 junction to ambient versus pulse duration (dpak) devicemountedonfr4with recommendedpadlayout dpak(s=0.5 2) cm dc =180 ipak dc =180 t amb (c) z th(jc) z th(ja) t p (s) devicemountedonfr4with recommendedpadlayout 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 1 e-3 1 e-2 1 e-1 1 e+0 1 e+1 1 e+2 5e+2 1 e-3 1 e-2 1 e-1 1 e+0 i (av)(a) t k=[zth(jc)/rth(jc)]
semiconductor rohs rohs page5of6 0 20 40 60 80 100 4pt series 0.1 0 0.5 1.0 1.5 2.0 3.0 2.5 3.5 4.0 0.0 1.0 10.0 50.0 0 2 4 6 v (v) tm tj=25 c tj=max tjmax v =0.85v t0 rd=90m i (a) tm r (ja)( c/w) th s(cm2) epoxyprintedcircuitboardfr4 copperthickness=35m fig.11 onstate characteristics (maximum values) fig.12 thermal resistance junction to ambient versuscoppersurfaceundertab(dpak) 8 10 12 14 16 18 20 rohs www.nellsemi.com 0 5 10 1 10 100 1000 nonrepetitive tjinital=25c repetitive tc=115c numberofcycles 15 20 25 30 35 tp=10ms onecycle fig.9 surge peak onstate current versus numberofctcles i (a) tsm tjinital=25 c i tsm i2t t p (ms) sinusoidalpulsewith width<10ms 0.01 0.10 1.00 10.00 1 10 100 300 i (a),i2t(a2s) tsm fig.10 nonrepetitive surge peak onstate current,andcorrespondingvalues ofl2t di/dtiimitation
semiconductor rohs rohs 4pt series rohs 1 2 2 3 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) to-252 (d-pak) case style page6of6 (g)3 1(a1) (a2) 2 www.nellsemi.com 4t 6.4(0.52) 6.6(0.26) 5.2(0.204) 5.4(0.212) 1.5(0.059) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.76(0.03) 0.65(0.026) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) to-251 (i-pak) 2.87 (0.113) 2.62(0.103) 9.40(0.370)9.14(0.360) 10.54(0.415) . max 16.13(0.635) 15.87 (0.625) pin 4.06(0.160)3.56(0.140) 1.45(0.057)1.14(0.045) 2.67(0.105)2.41(0.095) 2.65(0.104)2.45(0.096) 5.20 (0.205)4.95 (0.195) 0.90(0.035)0.70 (0.028) 3.91(0.154)3.74(0.148) 1 3 2 4.70(0.185) 4.44 0.1754 ( ) 1.39(0.055) 1.14 (0.045) 3.68(0.145)3.43(0.135) 8.89(0.350)8.38(0.330) 29.16(1.148) 28.40 (1.118) 14.22(0.560)13.46(0.530) 0.56(0.022)0.36(0.014) 2.79(0.110) 2.54(0.100) 15.32(0.603)14.55(0.573) to-220ab
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