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| savantic semiconductor product specification silicon npn power transistors 2SD476 2SD476a description with to-220c package complement to type 2sb566/566a applications for low frequency power amplifier power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 70 v 2SD476 50 v ceo collector-emitter voltage 2SD476a open base 60 v v ebo emitter-base voltage open collector 5 v i c collector current 4 a i cm collector current-peak 8 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD476 2SD476a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c =10a ; i e =0 70 v 2SD476 50 v (br)ceo collector-emitter breakdown voltage 2SD476a i c =50ma; r be = = 60 v v (br)ebo emitter-base breakdown votage i e =10a; i c =0 5 v v cesat collector-emitter saturation voltage i c =2 a;i b =0.2 a 1.0 v v besat base-emitter saturation voltage i c =2 a;i b =0.2 a 1.2 v i cbo collector cut-off current v cb =50v; i e =0 1 a h fe-1 dc current gain i c =0.1a ; v ce =4v 35 h fe-2 dc current gain i c =1a ; v ce =4v 60 200 f t transition frequency i c =0.5a ; v ce =4v 7 mhz switching times t on turn-on time 0.3 s t off turn-off time 3.0 s t stg storage time i c =0.5a ; v cc =10.5v i b1 =-i b2 =0.05 a 2.5 s h fe-2 classifications b c 60-120 100-200 savantic semiconductor product specification 3 silicon npn power transistors 2SD476 2SD476a package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) savantic semiconductor product specification 4 silicon npn power transistors 2SD476 2SD476a |
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