NCE7560K wuxi nce power semiconductor co., ltd page v1.0 1 http://www.ncepower.com pb - free product nce n-channel enhancement mode power mosfet product summary bv dss typ. 84 v 6.8 m ? r ds(on) typ. max. 8.0 m ? i d 60 a general description the NCE7560K uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications. features v ds =75v i d =60a@ v gs =10v r ds(on) <8m ? @ v gs =10v special process technology for high esd capability special designed for convertors and power controls high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation application power switching application hard switched and high frequency circuits uninterruptible power supply 100% uis tested! to-252-2l top view schematic diagram package marking and ordering information device marking device device package reel size tape width quantity NCE7560K NCE7560K to-252-2l - - - table 1. absolute maximum ratings (ta=25 ) parameter symbol value unit drain-source voltage (v gs =0v v ds 75 v gate-source voltage (v ds =0v) v gs 25 v drain current (dc) at tc=25 i d (dc) 60 a drain current (dc) at tc=100 i d (dc) 48 a drain current-continuous@ current-pulsed (note 1) i dm (pluse) 310 a peak diode recovery voltage dv/dt 30 v/ns maximum power dissipation(tc=25 ) p d 140 w derating factor 0.95 w/ single pulse avalanche energy (note 2) e as 300 mj operating junction and stor age temperature range t j ,t stg -55 to 175 notes 1.repetitive rating: pulse width limited by maximum junction temperature 2.eas condition tj=25 ,vdd=50v,vg=10v,l=0.5mh
wuxi nce power semiconductor co., ltd page v1.0 2 NCE7560K pb - free product http://www.ncepower.com table 2. thermal characteristic parameter symbol value unit thermal resistance junction-to-case maximum r thjc 1.05 /w thermal resistance junction-to-ambient maximum r thja 50 /w table 3. electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit on/off states drain-source breakdown voltage bv dss v gs =0v i d =250 a 75 v zero gate voltage drain current(tc=25 ) i dss v ds =75v,v gs =0v 1 a zero gate voltage drain current(tc=125 ) i dss v ds =75v,v gs =0v 10 a gate-body leakage current i gss v gs =20v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 3 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =30a 6.8 8 m ? dynamic characteristics forward transconductance g fs v ds =5v,i d =30a 60 s input capacitance c lss 3100 pf output capacitance c oss 310 pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz 260 pf total gate charge q g 100 nc gate-source charge q gs 18 nc gate-drain charge q gd v ds =30v,i d =30a, v gs =10v 27 nc switching times turn-on delay time t d(on) 18.2 ns turn-on rise time t r 15.6 ns turn-off delay time t d(off) 70.5 ns turn-off fall time t f v dd =30v,i d =2a,r l =15 ? v gs =10v,r g =2.5 ? 13.8 ns source- drain diode characteristics source-drain current(body diode) i sd 80 a pulsed source-drain current(body diode) i sdm 320 a forward on voltage (note 1) v sd tj=25 ,i sd =30a,v gs =0v 1.2 v reverse recovery time (note 1) t rr 53 ns reverse recovery charge (note 1) q rr tj=25 ,i f =75a,di/dt=100a/ s 105 nc forward turn-on time t on intrinsic turn-on time is negligible(turn-on is dominated by l s +l d ) notes 1. pulse test: pulse width 300 s, duty cycle 1.5%, r g =25 ? , starting tj=25
NCE7560K wuxi nce power semiconductor co., ltd page v1.0 3 http://www.ncepower.com pb - free pr od uc t test circuit ? 1 e as test circuits 2 gate charge test circuit: 3 switch time test circuit
NCE7560K wuxi nce power semiconductor co., ltd page v1.0 4 http://www.ncepower.com pb - free product typical electrical and therma l characteristics (curves) figure1. safe operating area figure2. source-drain diode forward voltage figure3. output characteristics figure4. transfer characteristics figure5. static drain-source on resistance figure6. r ds(on) vs junction temperature
NCE7560K wuxi nce power semiconductor co., ltd page v1.0 5 http://www.ncepower.com pb - free pr od uc t figure7. bv dss vs junction temperature figure8. v gs(th) vs junction temperature figure9. gate charge waveforms figure10. capacitance figure11. normalized maximum transient thermal impedance
NCE7560K wuxi nce power semiconductor co., ltd page v1.0 6 http://www.ncepower.com pb - free product to-252-2l package information
wuxi nce power semiconductor co., ltd page v1.0 7 NCE7560K pb - free product http://www.ncepower.com attention: any and all nce products described or contained herein do not ha ve specifications that can h andle applications that require extremely high levels of reliability, such as life-support syst ems, aircraft's control systems, or other applications whose fai lure can be reasonably expected to result in serious ph ysical and/or material damage. consult with your nce representative nearest you before us ing any nce products described or c ontained herein in such applications. nce assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum rati ngs, operating condition ranges, or other parameters) listed in products specifications of any and all nce products described or contained herein. specifications of any and all nce pro ducts described or contained herein stipulat e the performance, characteristics, and functions of the described products in t he independent state, and are not guarantees of the perform ance, characteristics, and functions of the described products as mount ed in the customer?s products or equipmen t. to verify symptoms and states that cannot be evaluated in an indepe ndent device, the customer s hould always evaluate and test devices mounted in the customer?s products or equipment. nce power semiconductor co.,ltd. st rives to supply high-quality high-reli ability products. ho wever, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger hum an lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circui ts and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all nce products(including tec hnical data, services) described or contained herein are controlled under any of applicable local export control laws and regulat ions, such products must not be exported without obtaining the export license from the authorities concer ned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by an y means, electronic or mechanical, including photocopying and recording, or any information storage or retrieva l system, or otherwise, without the prior written permission of nce power semiconductor co.,ltd. information (including circuit diagrams and circuit parameter s) herein is for example only ; it is not guaranteed for volume production. nce believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual proper ty rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the nce product that you intend to use. this catalog provides information as of mar. 2010. specifications and information herein are subject to change without notice .
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