smd type mosfet 1 www.kexin.com.cn 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source mos field effect transistor 2SK3296 features 4.5 v drive available low on-state resistance r ds(on)1 = 12m max. (v gs =10v,i d =18a) low gate charge q g = 30 nc typ. (i d =35a,v dd =16v,v gs =10v) built-in gate protection diode surface mount device available absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 20 v gate to source voltage v gss 20 v i d 35 a i dp * 140 a power dissipation t a =25 1.5 t c =25 40 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =20v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.0 2.5 v forward transfer admittance y fs v ds =10v,i d =18a 9.0 s v gs =10v,i d =18a 8.5 12 m v gs =4.5v,i d =18a 12 19 m input capacitance c iss 1300 pf output capacitance c oss 570 pf reverse transfer capacitance c rss 300 pf turn-on delay time t on 70 ns rise time t r 1220 ns turn-off delay time t off 100 ns fall time tf 180 ns v ds =10v,v gs =0,f=1mhz i d =18a,v gs(on) =10v,r g =10 ,v dd =10v drain to source on-state resistance r ds(on)
|
