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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1378 description collector-emitter breakdown voltage- : v (br)ceo = 80v(min) low saturation voltage - : v ce(sat) = 0.4v(max)@ i c = 0.5a complement to type 2sb1007 applications designed for low frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 80 v v ceo collector-emitter voltage 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 0.7 a collector power dissipation @ t a =25 1.2 p c collector power dissipation @ t c =25 10 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1378 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 50 a; i e = 0 80 v v (br)ceo collector-emitter breakdown voltage i c = 2ma; i b = 0 b 80 v v (br)ebo emitter-base breakdown voltage i e = 50 a; i c = 0 5 v v ce( sat ) collector-emitter saturation voltage i c = 0.5a; i b = 50ma 0.4 v i cbo collector cutoff current v cb = 50v; i e = 0 0.5 a i ebo emitter cutoff current v eb = 4v; i c = 0 0.5 a h fe dc current gain i c = 0.1a; v ce = 3v 82 390 f t current-gain?bandwidth product i e = 50ma; v ce = 10v 120 mhz c ob output capacitance i e = 0; v cb = 10v, f test = 1mhz 10 pf ? h fe classifications p q r 82-180 120-270 180-390 isc website www.iscsemi.cn 2 |
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