pb rohs ep2645ts-32.768m ep26 45 ts -32.768m series rohs compliant (pb-free) 3.3v 4 pad 5mm x 7mm ceramic smd lvcmos programmable oscillator frequency tolerance/stability 50ppm maximum operating temperature range -20c to +70c nominal frequency 32.768mhz pin 1 connection tri-state (disabled output: high impedance) duty cycle 50 10(%) electrical specifications nominal frequency 32.768mhz frequency tolerance/stability 50ppm maximum (inclusive of all conditions: calibration tolerance at 25c, frequency stability over the operating temperature range,supply voltage change, output load change, first year aging at 25c, shock, and vibration) aging at 25c 5ppm/year maximum operating temperature range -20c to +70c supply voltage 3.3vdc 0.3vdc input current 28ma maximum (unloaded) output voltage logic high (voh) vdd-0.4vdc minimum (ioh= -8ma) output voltage logic low (vol) 0.4vdc maximum (iol= +8ma) rise/fall time 4nsec maximum (measured at 20% to 80% of waveform) duty cycle 50 10(%) (measured at 50% of waveform) load drive capability 30pf maximum output logic type cmos pin 1 connection tri-state (disabled output: high impedance) tri-state input voltage (vih and vil) 70% of vdd minimum to enable output, 20% of vdd maximum to disable output, no connect to enable output. standby current 20a maximum (pin 1 = ground) disable current 16ma maximum (pin 1 = ground) absolute clock jitter 250psec maximum, 100psec typical one sigma clock period jitter 50psec maximum start up time 10msec maximum storage temperature range -55c to +125c environmental & mechanical specifications esd susceptibility mil-std-883, method 3015, class 1, hbm: 1500v fine leak test mil-std-883, method 1014, condition a flammability ul94-v0 gross leak test mil-std-883, method 1014, condition c mechanical shock mil-std-883, method 2002, condition b moisture resistance mil-std-883, method 1004 moisture sensitivity j-std-020, msl 1 resistance to soldering heat mil-std-202, method 210, condition k resistance to solvents mil-std-202, method 215 solderability mil-std-883, method 2003 temperature cycling mil-std-883, method 1010, condition b vibration mil-std-883, method 2007, condition a www.ecliptek.com | specification subject to change without notice | rev f 8/12/2010 | page 1 of 5
ep2645ts-32.768m mechanical dimensions (all dimensions in millimeters) pin connection 1 tri-state (high impedance) 2 ground/case ground 3 output 4 supply voltage line marking 1 ecliptek 2 32.768m 3 pxxyzz p=configuration designator xx=ecliptek manufacturing code y=last digit of the year zz=week of the year 2.88 1.81 2.0 (x4) 2.2 (x4) www.ecliptek.com | specification subject to change without notice | rev f 8/12/2010 | page 2 of 5 1.60 0.20 5.00 0.15 7.00 0.15 marking orient a tion 3.68 0.15 1.4 0.1 1.4 0.2 2.20 0.15 5.08 0.15 1 2 3 4 all t oler ances are 0.1 sug g ested solder p ad la y out solder land (x4) all dimensions in millimeters
ep2645ts-32.768m www.ecliptek.com | specification subject to change without notice | rev f 8/12/2010 | page 3 of 5 output disable (high imped ance st a te) output w a veform & timing dia gram v oh v ol 80% of w a v ef or m 50% of w a v ef or m 20% of w a v ef or m f all time rise time t w t duty cycle (%) = t w /t x 100 v ih v il t plz t pzl clock output tri-st a te input supply v oltage (v dd ) t est cir cuit f or cmos output output no connect or t r i-state ground + + + _ _ _ p o w er supply 0.01 f (note 1) 0.1 f (note 1) c l (note 3) note 1: an e xter nal 0.1 f lo w frequency tantalum b ypass capacitor in par allel with a 0.01 f high frequency cer amic b ypass capacitor close to the pac kage g round and v dd pin is required. note 2: a lo w capacitance (<12pf), 10x atten uation f actor , high impedance (>10mohms), and high bandwidth (>300mhz) passiv e probe is recommended. note 3: capacitance v alue c l includes sum of all probe and fixture capacitance . v oltage meter current meter oscilloscope f requency counter probe (note 2)
t min s t max s critical zone t to t l p ramp-up ramp-down t l t p t 25 c to peak t preheat s t l t p temperature (t) time (t) recommended solder reflow methods ep2645ts-32.768m high temperature infrared/convection ts max to tl (ramp-up rate) 3c/second maximum preheat - temperature minimum (ts min) 150c - temperature typical (ts typ) 175c - temperature maximum (ts max) 200c - time (ts min) 60 - 180 seconds ramp-up rate (tl to tp) 3c/second maximum time maintained above: - temperature (tl) 217c - time (tl) 60 - 150 seconds peak temperature (tp) 260c maximum for 10 seconds maximum target peak temperature (tp target) 250c +0/-5c time within 5c of actual peak (tp) 20 - 40 seconds ramp-down rate 6c/second maximum time 25c to peak temperature (t) 8 minutes maximum moisture sensitivity level level 1 additional notes temperatures shown are applied to body of device. www.ecliptek.com | specification subject to change without notice | rev f 8/12/2010 | page 4 of 5
t min s t max s critical zone t to t l p ramp-up ramp-down t l t p t 25 c to peak t preheat s t l t p temperature (t) time (t) recommended solder reflow methods ep2645ts-32.768m low temperature infrared/convection 240c ts max to tl (ramp-up rate) 5c/second maximum preheat - temperature minimum (ts min) n/a - temperature typical (ts typ) 150c - temperature maximum (ts max) n/a - time (ts min) 60 - 120 seconds ramp-up rate (tl to tp) 5c/second maximum time maintained above: - temperature (tl) 150c - time (tl) 200 seconds maximum peak temperature (tp) 240c maximum target peak temperature (tp target) 240c maximum 1 time / 230c maximum 2 times time within 5c of actual peak (tp) 10 seconds maximum 2 times / 80 seconds maximum 1 time ramp-down rate 5c/second maximum time 25c to peak temperature (t) n/a moisture sensitivity level level 1 additional notes temperatures shown are applied to body of device. low temperature manual soldering 185c maximum for 10 seconds maximum, 2 times maximum. (temperatures shown are applied to body of device.) high temperature manual soldering 260c maximum for 5 seconds maximum, 2 times maximum. (temperatures shown are applied to body of device.) www.ecliptek.com | specification subject to change without notice | rev f 8/12/2010 | page 5 of 5
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