sot223 npn silicon planar high current (high performance)transistor i s s u e 4 - n o v e m b e r 20 01 ? features * up to 5 amps continuous collector current, up to 10 amp peak * very low saturation voltage * excellent h fe specified up to 10 amps partmarking detail - FZT855 complementary type - fzt955 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 250 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 6v peak pulse current i cm 10 a continuous collector current i c 5a power dissipation at t amb =25c p tot 3w operating and storage temperature range t j :t stg -55 to +150 c *the power which can be dissipated assuming the device is mounted in a typical manner on a p.c.b. with copper equal to 4 inch square minimum FZT855 c c e b 78
electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 250 375 v i c =100 a collector-emitter breakdown voltage v (br)cer 250 375 v i c =1 a, rb 1k collector-emitter breakdown voltage v (br)ceo 150 180 v i c =10ma* emitter-base breakdown voltage v (br)ebo 68 v i e =100 a collector cut-off current i cbo 50 1 na a v cb =200v v cb =200v, t amb =100c collector cut-off current i cer r 1k 50 1 na a v cb =200v v cb =200v, t amb =100c emitter cut-off current i ebo 10 na v eb =6v collector-emitter saturation voltage v ce(sat) 20 35 60 260 40 65 110 355 mv mv mv mv i c =100ma, i b =5ma* i c =500ma, i b =50ma* i c =1a, i b =100ma* i c =5a, i b =500ma* base-emitter saturation voltage v be(sat) 1250 mv i c =5a, i b =500ma* base-emitter turn-on voltage v be(on) 1.1 v i c =5a, v ce =5v* static forward current transfer ratio h fe 100 100 15 200 200 30 10 300 i c =10ma, v ce =5v i c =1a, v ce =5v* i c =5a, v ce =5v* i c =10a, v ce =5v* transition frequency f t 90 mhz i c ==100ma, v ce =10v f=50mhz output capacitance c obo 22 pf v cb =10v, f=1mhz switching times t on t off 66 2130 ns ns i c =1a, i b1 =100ma i b2 =100ma, v cc =50v *measured under pulsed conditions. pulse width=300 s. duty cycle 2% FZT855 78
FZT855 0.01 0.1 1 10 0.4 0 0.8 typical characteristics v ce(sat) v i c i c - collector current (amps) v c e ( s a t ) - ( v o l t s ) i c - collector current (amps) v be(sat) v i c 0.01 0.1 1 10 1.0 0.5 2.0 1.5 i c - collector current (amps) v be(on) v i c v b e - ( v o l t s ) v b e ( s a t ) - ( v o l t s ) 0.6 0.2 0.01 0.1 1 10 0 1.0 0.8 0.6 0.4 0.2 1.6 1.4 1.2 i c - collector current (amps) h fe v i c h f e - n o r m a l i s e d g a i n 300 200 100 h fe - typical gain 100 v ce =10v 1000.001 0.01 0.1 1 10 1.0 0.5 2.0 1.5 100 0.001 v ce =5v i c /i b =10 i c /i b =50 v ce =5v i c /i b =50 i c /i b =10 100 safe operating area single pulse test tamb=25c i c - collector current (a) 0.1 1 1 0 1 10 0 1 0 0 0 v ce - collector voltage (v) 10 dc 10ms 1ms 100 s 100ms 1s 0.01 78
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