the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor pa2732ut1a switching p-channel power mosfet data sheet document no. g17641ej1v1ds00 (1st edition) date published january 2006 ns cp(k) printed in japan 2005 description the pa2732ut1a is p-channel mos field effect transistor designed for power management applications of notebook computers and li-ion battery protection circuit. features ? low on-state resistance r ds(on)1 = 3.7 m max. (v gs = ? 10 v, i d = ? 20 a) r ds(on)2 = 6.7 m max. (v gs = ? 4.5 v, i d = ? 20 a) ? low c iss : c iss = 3280 pf typ. ? small and surface mount package (8pin hvson) ordering information part number package pa2732ut1a-e1-az note 8pin hvson pa2732ut1a-e2-az note 8pin hvson note pb-free (this product does not c ontain pb in external electrode.) absolute maximum ratings (t a = 25 c, all terminals are connected.) drain to source voltage (v gs = 0 v) v dss ? 30 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) i d(dc) m 40 a drain current (pulse) note1 i d(pulse) m 160 a total power dissipation note2 p t1 1.5 w total power dissipation (pw =10 sec) note2 p t2 4.6 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c single avalanche current note3 i as ? 20 a single avalanche energy note3 e as 40 mj notes 1. pw 10 s, duty cycle 1% 2. mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm) 3. starting t ch = 25 c, v dd = ? 15 v, r g = 25 , l = 100 h, v gs = ? 20 0 v remark strong electric field, when exposed to this device, can cause destruction of t he gate oxide and ultimately degrade the device operation. st eps must be taken to stop gener ation of static electricit y as much as possible, and quickly dissipate it once, when it has occurred. package drawing (unit: mm) 1 2 3 4 7 8 6 5 1.27 5 0.2 5.15 0.2 6 0.2 3.65 0.2 0.7 0.15 0.6 0.15 0.42 ? 0.05 +0.1 0.10 m 0.10 s 0 ? 0 +0.05 0.27 0.05 1.0 max. 4.1 0.2 1, 2, 3 : source 4 : gate 5, 6, 7, 8: drain 5.4 0.2 1 0.2 equivalent circuit source body diode gate drain
data sheet g17641ej1v1ds 2 pa2732ut1a electrical characteristics (t a = 25 c, all terminals are connected.) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 a gate leakage current i gss v gs = m 20 v, v ds = 0 v m 100 na gate cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1 ma ? 1.0 ? 2.5 v forward transfer admittance note | y fs | v ds = ? 10 v, i d = ? 20 a 30 s drain to source on-state resistance note r ds(on)1 v gs = ? 10 v, i d = ? 20 a 3.1 3.7 m r ds(on)2 v gs = ? 4.5 v, i d = ? 20 a 4.3 6.7 m input capacitance c iss v ds = ? 10 v 3280 pf output capacitance c oss v gs = 0 v 1310 pf reverse transfer capacitance c rss f = 1 mhz 560 pf turn-on delay time t d(on) v dd = ? 15 v, i d = ? 20 a 14 ns rise time t r v gs = ? 10 v 15 ns turn-off delay time t d(off) r g = 10 680 ns fall time t f 440 ns total gate charge q g v dd = ? 24 v 133 nc gate to source charge q gs v gs = ? 10 v 14 nc gate to drain charge q gd i d = ? 40 a 41 nc body diode forward voltage note v f(s-d) i f = 40 a, v gs = 0 v 0.85 1.2 v reverse recovery time t rr i f = 40 a, v gs = 0 v 88 ns reverse recovery charge q rr di/dt = 50 a/ s 59 nc note pulsed test circuit 1 avalanche capability r g = 25 50 l v dd v gs = ? 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. pg. 50 d.u.t. r l v dd i g = ? 2 ma ?
data sheet g17641ej1v1ds 3 pa2732ut1a typical characteristics (t a = 25 c) derating factor of forward bias safe operating area forward bias safe operating area dt - percenta g e of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t a - ambient temperature - c i d - drain current - a -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 i d(pulse) i d(dc) t a =25c single p ulse m o unted o n a galass epo xy bo ard (25.4mm 25.4mm 0.8mm) p w = 1 0 0 s 1 m s 1 0 m s 1 0 0 m s 1 0 s r d s ( o n ) l i m i t e d ( a t v g s = ? 1 0 v ) p o w e r d i s s i p a t i o n l i m i t e d v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 83.3 c/w r th(ch-c) = 1.5 c/w r th(ch-a) : mounted on a glass epoxy board (25.4mm x 25.4mm x 0.8 mm) single pulse pw - pulse width - s drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 -50 -100 -150 -200 0 -0.2 -0.4 -0.6 -0.8 -1 v gs = ? 10v pu ls e d ? 4.5v v ds - drain to source voltage - v i d - drain current - a -0.01 -0.1 -1 -10 -100 -1000 0 -1-2-3-4 pulsed v ds = ? 10v t ch =150 c 75 c 25 c ? 55 c v gs - gate to source voltage - v 100 1 m 10 m 100 m 1 10 100 1000
data sheet g17641ej1v1ds 4 pa2732ut1a gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v 0 -0.5 -1 -1.5 -2 -2.5 -50 0 50 100 150 pulsed v ds = ? 10v i d = ? 1ma t ch - channel temperature - c | y fs | - forward transfer admittance - s -1 -10 -100 -0.01 -0.1 -1 -10 -100 pulsed v ds = ? 10v t ch =150c 75c 25c ? 55c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m ? 10v pulsed ? 4.5v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 5 10 15 0 -5 -10 -15 -20 pulsed i d = ? 20a v gs - gate to source voltage - v drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m ? 20a v gs = ? 10v ? 4.5v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 10 100 1000 10000 -0.1 -1 -10 -100 c iss v gs =0v f=1mhz c rs s c oss v ds - drain to source voltage - v
data sheet g17641ej1v1ds 5 pa2732ut1a switching characteristics dynamic input characteristics t d(on) , t r , t d(off) , t f - switching time - ns 1 10 100 1000 10000 - 0.1 - 1 -10 -100 - 1000 td (on) v dd = ? 15v v gs = ? 10v r g = 10 t d(off) t f t r i d - drain current - a v ds - drain to source voltage - v 0 -2 -4 -6 -8 -10 -12 0 50 100 150 v dd = ? 24v ? 15v ? 6v q g - gate charge - nc source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 pulsed v gs = ? 10v 0v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 -0.1 -1 -10 -100 di/dt=50a/ s v gs =0v i f - diode forward current - a
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