rej03g1474-0200 rev.2.00 nov 10, 2008 page 1 of 4 rjp4003ans nch igbt for strobe flash rej03g1474-0200 rev.2.00 nov 10, 2008 features ? ultra small surface mount package (vson-8) ? v ces : 400 v ? i cm : 150 a ? drive voltage: 4 v outline renesas package code: pvsn0008ja-a (package name: vson-8) 8 2 4 1 3 5 6 7 1, 2, 3 : emitter 4 : gate 5, 6, 7, 8 : collecto r 8 4 1 5 applications strobe flash for cameras maximum ratings (tc = 25c) parameter symbol ratings unit conditions collector-emitter voltage v ces 400 v v ge = 0 v gate-emitter voltage v ges 6 v v ce = 0 v peak gate-emitter voltage v gem 8 v v ce = 0 v, tw = 10 s collector current (pulse) i cm 150 a c m = 400 f (see performance curve) junction temperature tj ? 40 to +150 c storage temperature tstg ? 40 to +150 c
rjp4003ans rej03g1474-0200 rev.2.00 nov 10, 2008 page 2 of 4 electrical characteristics (tj = 25c) parameter symbol min. typ. max. unit test conditions collector-emitter breakdown voltage v (br)ces 450 ? ? v i c = 1 ma, v ge = 0 v collector-emitter leakage current i ces ? ? 10 a v ce = 400 v, v ge = 0 v gate-emitter leakage current i ges ? ? 10 a v ge = 6 v, v cs = 0 v gate-emitter thre shold voltage v ge(th) 0.5 0.7 1.5 v v ce = 10 v, i c = 1 ma collector-emitter sa turation voltage v ce(sat) ? 5.0 10.0 v i c = 150 a, v ge = 4 v input capacitance cies ? 5000 ? pf v ce = 25 v, v ge = 10 v, f = 1 mhz performance curves maximum pulse collector current (conductive capability in strobe flash applications) 0 50 100 150 200 02468 gate - emitter voltage v ge (v) pulse collector current i cm (a) t c = 70 c c m = 400 f r g = 68 ?
rjp4003ans rej03g1474-0200 rev.2.00 nov 10, 2008 page 3 of 4 application example c m + ? 8 xe tube trigger transformer v cm 765 1234 v cm i cp c m v ge 330 v 130 a 330 f 5 v recommended operation conditions maximum operation conditions 350 v 150 a 400 f 4 v igbt driver rd5cyd08 rd5cydt08 precautions on usage 1. igbt has mos structure and its gate is insulated by thin silicon oxide. so please handle carefully to protect the device from electrostatic charge. 2. gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. and turn-off dv/dt must become less than 400 v/ s. in general, when r g (off) = 68 ? , it is satisfied. 3. for safety use, we recommend that the ground of the drive signal is connected to pin 3. 4. the operation life should be endured until repeated discharge of 5,000 times under the charge current (i xe 150 a : full luminescence condition) of main capacitor (c m = 400 f). repetition period under full luminescence condition is over 3 seconds. 5. total operation hours applied to the gate-emi tter voltage must be within 5,000 hours when v ge is driven at 6 v.
rjp4003ans rej03g1474-0200 rev.2.00 nov 10, 2008 page 4 of 4 package dimensions e e h e d 1.95 0.1 c l 1 0.15max a b d e a b e l p h e x y c l 1 0.25 0.30 0.65 0.35 0.15 3.10 4.50 0.95 2.90 3.00 4.30 4.40 0.40 0.08 4.70 0.09 4.80 4.90 0.10 0.20 0.30 0.10 0.25 dimension in millimeters reference symbol min nom max l p y m x p-vson8-3x4.4-0.65 0.032g mass[typ.] tnp-8dbv pvsn0008ja-a renesas code jeita package code previous code package name vson-8 order code lead form standard packing quantity standard order code standard order code example surface-mounted type taping 3000 type name ? 00 ? q1 RJP4003ANS-00-Q1 note : please confirm the specificat ion about the shipping in detail.
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