? semiconductor components industries, llc, 2003 april, 2003 - rev. 0 1 publication order number: nsb1706dmw5t1/d nsb1706dmw5t1 dual bias resistor transistor npn silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the nsb1706dmw5t1, two brt devices are housed in the sc-88a package which is ideal for low power surface mount applications where board space is at a premium. ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch/3000 unit tape and reel maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1.) 256 (note 2.) 1.5 (note 1.) 2.0 (note 2.) mw mw/ c thermal resistance - junction-to-ambient r q ja 670 (note 1.) 490 (note 2.) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 250 (note 1.) 385 (note 2.) 2.0 (note 1.) 3.0 (note 2.) mw mw/ c thermal resistance - junction-to-ambient r q ja 493 (note 1.) 325 (note 2.) c/w thermal resistance - junction-to-lead r q jl 188 (note 1.) 208 (note 2.) c/w junction and storage temperature t j , t stg - 55 to +150 c 1. fr-4 @ minimum pad 2. fr-4 @ 1.0 x 1.0 inch pad sc-88a case 419a u6 = device marking marking diagram u6 (5) (4) (3) (2) (1) q1 q1 q2 http://onsemi.com
nsb1706dmw5t1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo - - 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo - - 500 nadc emitter-base cutoff current mun5233dw1t1 (v eb = 6.0 v, i c = 0) i ebo - - 0.18 madc collector-base breakdown voltage (i c = 10 m a, i e = 0) v (br)cbo 50 - - vdc collector-emitter breakdown voltage (note 2) (i c = 2.0 ma, i b = 0) v (br)ceo 50 - - vdc on characteristics (note 2) dc current gain mun5233dw1t1 (v ce = 10 v, i c = 5.0 ma) h fe 80 200 - collector-emitter saturation voltage (i c = 10 ma, i b = 1 ma) mun5233dw1t1 v ce(sat) - - 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k w ) mun5233dw1t1 v ol - - 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k w ) mun5233dw1t1 v oh 4.9 - - vdc input resistor mun5233dw1t1 r1 3.3 4.7 6.1 k w resistor ratio mun5233dw1t1 r1/r2 0.055 0.1 0.185 1. new resistor combinations. updated curves to follow in subsequent data sheets. 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% figure 1. derating curve 300 200 150 100 50 0 - 50 0 50 100 150 t a , ambient temperature ( c) r q ja = 833 c/w 250 p d , power dissipation (mw)
nsb1706dmw5t1 http://onsemi.com 3 package dimensions sc-88a case 419a-02 issue f notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a-01 obsolete. new standard 419a-02. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k -b-
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