1 tm file number 4780.1 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright ?intersil corporation 2000 star*power is a trademark of intersil corporation. is-1009rh radiation hardened 2.5v reference the star*power radiation hardened is-1009rh is a 2.5v shunt regulator diode designed to provide a stable 2.5v reference over a wide current range. the device is exceptionally stable over a wide current range and is designed to maintain stability over the full miitary temperature range and over time. it operates and is speci?d at a lower minimum current than other 1009 types. the 0.2% reference tolerance is achieved by on-chip trimming. an adjustment terminal is provided to allow for the calibration of system errors. the use of this terminal to adjust the reference voltage does not effect the temperature coef?ient. constructed with the intersil dielectrically isolated ebhf process, these devices are immune to single event latch-up and have been speci?ally designed to provide highly reliable performance in harsh radiation environments. speci?ations for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical speci?ations for these devices are contained in smd 5962-00523. a ?ot-link?is provided on our homepage for downloading. www.intersil.com/spacedefense/space.htm pinouts is2-1009rh (to-206ab can) bottom view isye-1009rh (smd.5) bottom view features electrically screened to smd # 5962-00523 qml quali?d per mil-prf-38535 requirements radiation environment - total dose. . . . . . . . . . . . . . . . . . . 3 x 10 5 rad(si) (max) - latch-up immune . . . . . . . . . . . . . dielectrically isolated lower i min than other 1009 types . . . . . . . . . . . . 100 a reverse breakdown voltage (v z ). . . . . . . . . . . . . . . . 2.5v ? z vs. change in current (100 a to 10ma). . . . . . . . 6mv ? z vs. temp (-55 o c to 125 o c) . . . . . . . . . . . . . . . . . 15mv max reverse breakdown current . . . . . . . . . . . . . . 20ma interchangeable with 1009 and 136 industry types applications power supply monitoring reference for 5v systems a/d and d/a reference tm 2 1 3 v- v+ adj 1 2 3 v- v+ adj ordering information ordering number internal mkt. number temp. range ( o c) 5962f0052301vxa is2-1009rh-q -55 to 125 5962f0052301qxa is2-1009rh-8 -55 to 125 5962f0052301vya isye-1009rh-q -55 to 125 5962f0052301qya ISYE-1009RH-8 -55 to 125 is2-1009rh/proto is2-1009rh/proto -55 to 125 isye-1009rh/proto isye-1009rh/proto -55 to 125 data sheet august 2000
2 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site www.intersil.com sales of?e headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (321) 724-7000 fax: (321) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil ltd. 8f-2, 96, sec. 1, chien-kuo north, taipei, taiwan 104 republic of china tel: 886-2-2515-8508 fax: 886-2-2515-8369 die characteristics die dimensions 1270 m x 1778 m (50 mils x 70 mils) thickness: 483 m 25.4 m (19 mils 1 mil) interface materials glassivation type: nitride (si 3 n 4 ) over silox (sio 2 ) nitride thickness: 4.0k ? 1.0k ? silox thickness: 12.0k ? 4.0k ? top metallization type: alsicu thickness: 16.0k ? 2k ? substrate ebhf, dielectric isolation backside finish silicon assembly related information substrate potential unbiased (di) additional information worst case current density <1.0 x 10 5 a/cm 2 transistor count 26 metallization mask layout is-1009rh adj v- v+ is-1009rh
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