10v drive nch mosfet RCD060N25 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high-speed switching. 3) wide range of soa. 4) drive circuits can be simple. 5) parallel use is easy. ? application switching ? packaging specifications ? inner circuit package taping code tl basic ordering unit (pieces) 2500 RCD060N25 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 250 v gate-source voltage v gss ? 30 v continuous i d ? 6a pulsed i dp ? 24 a continuous i s 6a pulsed i sp 24 a avalanche current i as 3a avalanche energy e as 2.62 mj power dissipation p d 20 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , t ch =25 ? c *3 limited only by maximum channel temperature allowed. *4 t c =25 ? c ? thermal resistance symbol limits unit channel to case rth (ch-c) 6.25 ? c / w * t c =25c * limited only by maximum channel temperature allowed. parameter type source current (body diode) drain current parameter *1,3 *2 *2 (1) gate (2) drain (3) source ? 1 body diode cpt3 (sc-63) 6.5 2.3 (2) (3) 0.65 0.9 (1) 0.75 2.30.9 5.1 1.5 5.5 2.3 0.5 1.0 0.5 9.5 2.5 0.8min. 1.5 *4 *3 * *1 (1) (3) (2) ?1 1/6 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. www.datasheet.co.kr datasheet pdf - http://www..net/
RCD060N25 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 250 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --10 ? av ds =250v, v gs =0v gate threshold voltage v gs (th) 3.0 - 5.0 v v ds =10v, i d =1ma forward transfer admittance l y fs l 2.2 - - s v ds =10v, i d =3a input capacitance c iss - 840 - pf v ds =25v output capacitance c oss - 50 - pf v gs =0v reverse transfer capacitance c rss - 25 - pf f=1mhz turn-on delay time t d(on) - 22 - ns v dd 125v, i d =3a rise time t r - 20 - ns v gs =10v turn-off delay time t d(off) - 30 - ns r l =41.67 ? fall time t f - 13 - ns r g =10 ? total gate charge q g - 15 - nc v dd 125v, i d =6a gate-source charge q gs -6-ncv gs =10v gate-drain charge q gd -6-nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =6a, v gs =0v *pulsed conditions m ? parameter static drain-source on-state resistance r ds (on) i d =3a, v gs =10v - 410 530 parameter conditions * * * * * * * * * * * * * * * * * 2/6 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
RCD060N25 ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 2 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs =10.0v v gs =7.0v v gs =8.0v t a =25 c pulsed 0 1 2 3 4 5 6 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =7.0v v gs =10.0v v gs =8.0v t a =25 c pulsed 0.001 0.01 0.1 1 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 drain currnt : i d [a] gate - source voltage : v gs [v] fig.3 typical transfer characteristics v ds =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 gate threshold voltage v gs(th) [v] channel temperature : t ch [ ] fig.4 gate threshold voltage vs. channel temperature v ds =10v i d =1ma pulsed 0.1 1 10 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [ ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0 0.5 1 1.5 -50 -25 0 25 50 75 100 125 150 static drain - source on - state resistance r ds(on) [ ] channel temperature : t ch [ ] fig.6 static drain - source on - state resistance vs. channel temperature v gs =10v pulsed i d =6a i d =3a 3/6 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
RCD060N25 0.01 0.1 1 10 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : is [a] source - drain voltage : v sd [v] fig.8 source current vs. source - drain voltage v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c 1 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.10 switching characteristics t d(on) t r t d(off) t f v dd =125v v gs =10v r g =10 t a =25 c pulsed 0 5 10 15 0 5 10 15 20 25 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.11 dynamic input characteristics t a =25 c v dd =125v i d =6a pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : v ds [v] fig.12 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 100 300 500 700 900 1100 1300 1500 0 2 4 6 8 10 12 14 16 18 20 static drain - source on - state resistance r ds(on) [m w ] gate - source voltage : v gs [v] fig.9 static drain - source on - state resistance vs. gate - source voltage t a =25 c pulsed i d =3.0a i d =6.0a 4/6 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
RCD060N25 10 100 1000 0 1 10 reverse recovery time : t rr [ns] source current : i s [a] fig.13 reverse recovery time vs. source current t a =25 c v gs =0v di/dt=100a/us pulsed 5/6 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
RCD060N25 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 6/6 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet www.datasheet.co.kr datasheet pdf - http://www..net/
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes www.datasheet.co.kr datasheet pdf - http://www..net/
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