inchange semiconductor isc product specification isc silicon npn power transistor BU2520AW description collector-emitter sustaining voltage- : v ceo(sus) = 800v (min) high switching speed applications designed for use in horizontal deflection circuits of large screen color tv receivers absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage(v be = 0) 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7.5 v i c collector current- continuous 10 a i cm collector current-peak 25 a i b b base current- continuous 6 a i bm base current-peak 9 a p c collector power dissipation @ t c =25 125 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU2520AW electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0, l= 25mh 800 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7.5 v v ce (sat) collector-emitter saturation voltage i c = 6a; i b = 1.2a b 5.0 v v be (sat) base-emitter saturation voltage i c = 6a; i b = 1.2a b 1.1 v i ces collector cutoff current v ce = 1500v; v be = 0 v ce = 1500v; v be = 0; t c =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 7.5v; i c = 0 1.0 ma h fe-1 dc current gain i c = 0.1a; v ce = 5v 13 h fe-2 dc current gain i c = 6a; v ce = 5v 5 9.5 c ob output capacitance i e = 0; v cb = 10v; f test = 1mhz 115 pf switching times t stg storage time 5.5 s t f fall time i c = 6a , i b( end ) = 1.0a;l c = 650 h; l b = 5.3 h; c fb = 19nf; -v bb = 4v; (-di b /dt= 0.8a/ s) 0.5 s isc website www.iscsemi.cn 2
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