any changing of specification will not be informed individual BCX19 npn silicon plastic-encapsulate transistor p o w e r d i s s i p a t i o n c o l l e c t o r c u r r e n t i c m : 0 . 5 a c o l l e c t o r - b a s e v o l t a g e v ( b r ) c b o : 5 0 v o p e r a t i n g & s t o r a g e j u n c t i o n t e m p e r a t u r e t j , t s t g : - 5 5 o c ~ + 1 5 0 o c p c m : 0 . 2 2 5 w ( t a m b = 2 5 o c ) n n n n r o h s c o m p l i a n t p r o d u c t n s o t - 2 3 features collector 3 1 base 2 emitter http://www.secosgmbh.com elektronische bauelemente 1 2 3 e l e c t r i c al ch ar ac t e r i s t i c s (t a m b = 2 5 c u n l ess o o t h er w i se sp eci f i ed ) p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t c o l l ec t o r - b as e b r eakdow n vo l t ag e v ( b r) cb o i c = 10 a, i e =0 50 v c o l l e c t o r - e m i t t er br ea kdow n vo l t age v ( b r) ce o ic = 10 m a , i b =0 v e m i t t e r - b ase br eak dow n vo l t age v ( br ) ebo i e =10 a, i c =0 5 v c o lle c to r c u t-o ff c u rre n t i cb o v cb =20v , i e =0 0. 1 a c o lle c to r c u t-o ff c u rre n t i ce o v ce =20v , i b =0 0. 1 a e m i t t e r cut - of f cur r ent i ebo v eb = 5 v , i c =0 10 a d c cur r ent ga i n h fe v ce =1v , i c = 1 00ma 600 c o l l ec t o r - e m i t t er sat u r a t i o n vo l t a g e v ce (s a t ) i c =500 m a, i b = 50 m a 0. 62 v b ase- e m i t t e r sat u r at i o n vo l t ag e v be (o n i c =500 m a, v ce =1v 1. 2 v ) 45 100 m a r k i n g b c x 1 9 = u 1 01 -jun-2002 rev. a page 1 of 1 1 . 9 0 . 9 5 0 . 9 5 2 . 9 0 . 4 1. 3 2. 4 1 . 0 unit: millimeter a suffix of "-c" specifies halogen & lead-free
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