document number: 81123 for tec hnical questions, contact: optochipsupport@vishay.com www.vishay.com rev. 1.5, 23-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 silicon npn phototransistor t1090p vishay semiconductors description t1090p is a silicon npn phototransistor chip with high radiant sensitivity, sensitive to visible and near infrared radiation. features ? package type: chip ? package form: single chip ? dimensions (l x w x h in mm): 0.53 x 0.53 x 0.185 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? detector in electronic control and drive circuits general information the datasheet is based on vishay optoel ectronics sample testing under certain pr edetermined and assumed conditions, and is provided for illustration purpose only. customers are encouraged to perform testing in actu al proposed packaged and used conditions. vishay optoelectronics die products are tested us ing vishay optoelectronics ba sed quality assurance procedures and are manufactured using vishay optoelectronics established processes. estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packagin g, handling, use, and ot her factors. therefore sold die may not perform on an equivale nt basis to standard package products. note ? test condition see table basic characteristics note ? moq: minimum order quantity e b 21650 product summary component i ca (ma) ? (deg) ? 0.1 (nm) t1090p 0.43 to 0.77 60 440 to 1070 ordering information ordering code packaging remarks package form T1090P-SD-F wafer sawn on foil with disco frame moq: 100 000 pcs chip absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collec tor voltage v eco 5v collector current i c 50 ma junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg1 - 40 to + 100 c storage temperature range on foil t stg2 - 40 to + 50 c
www.vishay.com for technica l questions, contact: optochipsupport@vishay.com document number: 81123 2 rev. 1.5, 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 t1090p vishay semiconductors silicon npn phototransistor notes ? the measurements are based on samples of die which are mounted on a to-header without resin coating (1) specific selection types possible basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - rise/fall time vs. collector current note ? all chips are checked in ac cordance with the vishay se miconductor, specif ication of vi sual inspection fvov6870. the visual inspection shall be made in accordance with the speci fication of visual inspection as referenced. the visual inspe ction of chip backside is performed with ster eo microscope with incident li ght and 40x to 80x magnification. the quality inspection (final visual inspection) is performed by production. an additional visual inspection step as special re lease procedure by qm is not installed. basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector emitter dark current v ce = 20 v, e = 0 i ceo 1na collector light current (vishay selection type (1) ) e e = 1 mw/cm 2 , ? = 950 nm, v ce = 5 v i ca 0.43 0.77 ma wavelength of peak sensitivity ? p 825 nm range of spectral bandwidth ? 0.1 440 to 1070 nm rise time v ce = 5 v, i c = 2 ma, r l = 100 ? t r , t f 4.3 s fall time v ce = 5 v, i c = 2 ma, r l = 100 ? t r , t f 7.7 s 0 10 20 30 40 50 60 70 80 90 100 0 250 500 750 1000 1250 1500 1750 2000 i c - collector current (a) t r /t f - rise/fall time (s) t f t r 20599 r l = 100 mechanical dimensions parameter symbol min. typ. max. unit length of chip edge (x-direction) l x 0.52 mm length of chip edge (y-direction) l y 0.52 mm die height h 0.185 mm diameter of bond pad base d 0.1 mm bond pad emitter a x b 0.1 x 0.1 mm 2 additional information frontside metallization, base (b), emitter (e) aluminum backside metallization, collector ausb dicing sawing die bonding technology epoxy bonding
document number: 81123 for tec hnical questions, contact: optochipsupport@vishay.com www.vishay.com rev. 1.5, 23-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 t1090p silicon npn phototransistor vishay semiconductors handling and storage conditions ? the hermetically sealed shipment lots shall be opened in temperature and moisture cont rolled cleanroom environment only. it is mandatory to follow the rules fo r disposition of material that can be hazardous for humans and environment. ? product must be handled only at esd safe workstations. standard esd precautions and safe work environments are as defined in mil-hdbk-263. ? singulated die are not to be handled with tweezers. a vacuum wand with non metallic esd pro tected tip should be used. packing chips are fixed on adhesive foil. upon request the foils can be mounted on plastic frame or disco frame. for shipment, the wafers are arranged to stacks and hermeti cally sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). use for recycling reliable operators only. we can help getting in touch with your nearest sales office. by agreement we will ta ke back packing material, if it is sorted. yo u will have to bear the costs of transpor t. we will invoice you for any costs incurre d for packing material that is re turned unsorted or which we are not obliged to accept.
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