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NJG1145UA2 - 1 - ver.2010-10-01 wide band low noise amplifier gaas mmic general description package outline the NJG1145UA2 is a fully matched wide band low noi se amplifier gaas mmic for digital tv and bs/cs applic ations. this amplifier covers vhf, uhf, and l bands. to achieve wide dynamic range, the NJG1145UA2 offer s high gain mode and low gain mode. selecting high gain mo de for weak signals, the NJG1145UA2 helps improve receiver sens itivity through high gain and low noise figure. selecting l ow gain mode for strong signals, it bypasses lna circuit to offe r higher linearity. in high gain mode, the NJG1145UA2 achieves high gai n and high iip3 across the band. the esd protection circuits are integrated into the mmic. they achieve high esd protection voltage. an ultra-small and ultra-thin package of epffp6-a2 is adopted. features wide operating frequency range 90mhz~2150mhz low voltage operation 2.8v typ. external components count 3pcs. (capacitor: 2pcs, inductor: 1pc) small package size epffp6-a2 (package size: 1.0mmx 1.0mmx0.37mm typ.) [high gain mode] current consumption 20ma typ. high gain +15.0db typ. low noise figure 1.5db typ. [low gain mode] low current consumption 11 a typ. gain(low loss) -1.0db typ. pin configuration truth table h=v ctl(h) l=v ctl(l) v ctl lna on bypass lna mode h on off high gain mode l off on low gain mode NJG1145UA2 pin connection 1. gnd 2. gnd 3. rfout 4. vctl 5. gnd 6. rfin (top view) 6 5 4 2 3 lna circuit bypass circuit logic circuit 1 1pin index rfin gnd gnd gnd bias circuit vctl rfout note: specifications and description listed in this datasheet are subject to change without notice.
NJG1145UA2 - 2 - absolute maximum ratings t a =+25c, z s =z l =50 ohm parameter symbol conditions ratings units supply voltage v dd 5.0 v control voltage v ctl 5.0 v input power p in v dd =2.8v +15 dbm power dissipation p d 4-layer fr4 pcb with through-hole (101.5x114.5mm), t j =150c 590 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+150 c electrical characteristics1 (dc characteristics) general conditions: v dd =2.8v, t a =+25c, z s =z l =50 ohm parameters symbol conditions min typ max units operating voltage v dd 2.3 2.8 3.6 v control voltage (high) v ctl(h) 1.3 1.8 3.6 v control voltage (low) v ctl(l) 0.0 0.0 0.5 v operating current1 i dd1 rf off, v ctl =1.8v - 20.0 27.0 ma operating current2 i dd2 rf off, v ctl =0v - 11.0 25.0 a control current i ctl rf off, v ctl =1.8v - 6.0 10.0 a
NJG1145UA2 - 3 - electrical characteristics2 (high gain mode) conditions: freq=90~2150mhz, v dd =2.8v, v ctl =1.8v, t a =+25c, z s =z l =50 ohm parameters symbol conditions min typ max units small signal gain1 gain1 exclude pcb, connector losses*1 12.0 15.0 18.0 db noise figure1 nf1 exclude pcb, connector losses*2 - 1.5 2.3 db input power 1db gain compression1 p -1db(in) 1 -5.0 +0.0 - dbm input 3rd order intercept point1 iip3_1 f1=freq, f2=freq+100khz, p in =-26dbm +2.0 +10.0 - dbm 2nd order imd1 im2_1 f1=200mhz, f2=500mhz, fmeas=700mhz, p in 1=p in 2=-15dbm *3 20.0 28.0 - db 3rd order imd1 im3_1 f1=600mhz, f2=650mhz, fmeas=700mhz, p in 1=p in 2=-15dbm *3 35.0 45.0 - db isolation isl s12 - -19.0 -15.0 db rf in vswr1 vswri1 - 2.2 3.2 - rf out vswr1 vswro1 - 1.5 2.2 - *1 input & output pcb and connector losses: 0.037db (90mhz), 0.092db(620mhz), 0.274db(2150mhz) *2 input pcb and connector losses: 0.019db(90mhz), 0.046db(620mhz), 0.122db(2150mhz) *3 definitions of im2 and im3. frequency(mhz) pout(dbm) 600/650 700 im3 frequency(mhz) pout(dbm) 200 500 700 im2
NJG1145UA2 - 4 - electrical characteristics3 (low gain mode) conditions: freq=90~2150mhz, v dd =2.8v, v ctl =0v, t a =+25c, z s =z l =50 ohm parameters symbol conditions min typ max units small signal gain2 gain2 exclude pcb, connector losses*1 -6.0 -1.0 - db input power at 1db gain compression2 p -1db(in) 2 +10.0 +15.0 - dbm input 3rd order intercept point2 iip3_2 f1=freq, f2=freq+100khz, p in =-6dbm +20.0 +30.0 - dbm 2nd order imd2 imd2_2 f1=200mhz, f2=500mhz fmeas=700mhz, p in 1=p in 2=-8dbm *3 55.0 66.0 - db 3rd order imd2 imd3_2 f1=600mhz, f2=650mhz fmeas=700mhz, p in 1=p in 2=-8dbm *3 65.0 75.0 - db rf in vswr2 vswri2 - 1.5 4.0 - rf out vswr2 vswro2 - 1.5 4.0 - *1 input & output pcb and connector losses: 0.037db (90mhz), 0.092db(620mhz), 0.274db(2150mhz) *3 definitions of im2 and im3. frequency(mhz) pout(dbm) 600/650 700 im3 frequency(mhz) pout(dbm) 200 500 700 im2
NJG1145UA2 - 5 - terminal information no. symbol description 1 gnd ground terminal. this terminal should be connected to the ground plane as close as possible for excellent rf perform ance. 2 gnd ground terminal. this terminal should be connected to the ground plane as close as possible for excellent rf perform ance. 3 rfout rf output terminal. this terminal doubles as the dr ain terminal of the lna. please connect this terminal to the power supp ly(vdd) via inductor(l1). 4 vctl control voltage terminal. 5 gnd ground terminal. this terminal should be connected to the ground plane as close as possible for excellent rf perform ance. 6 rfin rf input terminal. this ic integrates an inp ut dc blocking capacitor.
NJG1145UA2 - 6 - electrical characteristics (high gain mode) conditions: v dd =2.8v, v ctl =1.8v, ta=25c, z s =z l =50 ohm, with application circuit -30 -25 -20 -15 -10 -5 0 5 10 15 -40 -35 -30 -25 -20 -15 -10 -5 0 pout vs. pin (f=620mhz) pout (dbm) pin (dbm) pout p-1db(in)=-4.0dbm 0 5 10 15 20 0 5 10 15 20 25 30 35 40 -40 -35 -30 -25 -20 -15 -10 -5 0 gain, i dd vs. pin (f=620mhz) gain (db) i dd (ma) pin (dbm) p-1db(in)=-4.0dbm gain i dd -100 -80 -60 -40 -20 0 20 40 -30 -25 -20 -15 -10 -5 0 5 10 pout, im3 vs. pin (f1=620mhz, f2=f1+100khz) pout, im3 (dbm) pin (dbm) pout im3 iip3=+7.1dbm 8 9 10 11 12 13 14 15 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 500 1000 1500 2000 2500 gain, nf vs. frequency (f=50~2500mhz) gain (db) nf (db) frequency (mhz) gain nf (exclude pcb, connector losses) -15 -10 -5 0 5 0 500 1000 1500 2000 2500 p-1db(in) vs. frequency (f=50~2150mhz) frequency (mhz) p-1db(in) (dbm) p-1db(in) 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 oip3, iip3 vs. frequency (f1=50~2150mhz, f2=f1+100khz, pin=-26dbm) oip3, iip3 (dbm) frequency (mhz) oip3 iip3
NJG1145UA2 - 7 - 8 9 10 11 12 13 14 15 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 gain, nf vs. v dd (f=620mhz) gain (db) nf (db) v dd (v) gain nf (exclude pcb, connector losses) -15 -10 -5 0 5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 p-1db(in) vs. v dd (f=620mhz) p-1db(in) (dbm) v dd (v) p-1db(in) 0 5 10 15 20 25 30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 oip3, iip3 vs. v dd (f1=620mhz, f2=f1+100khz, pin=-26dbm) oip3, iip3 (dbm) v dd (v) oip3 iip3 10 15 20 25 30 35 40 1.5 2.0 2.5 3.0 3.5 4.0 4.5 im2 vs. v dd (f1=200mhz, f2=500mhz, pin=-15dbm) im2 (db) v dd (v) im2 1.0 1.5 2.0 2.5 3.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 vswr vs. v dd (f=620mhz) vswr v dd (v) vswro vswri 30 35 40 45 50 55 60 1.5 2.0 2.5 3.0 3.5 4.0 4.5 im3 vs. v dd (f1=600mhz, f2=650mhz, pin=-15dbm) im3 (db) v dd (v) im3 electrical characteristics (high gain mode) conditions: v ctl =1.8v, ta=25 o c, z s =z l =50 ohm, with application circuit
NJG1145UA2 - 8 - 0 5 10 15 20 25 30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i dd vs. v dd (rf off) i dd (ma) v dd (v) i dd -30 -25 -20 -15 -10 -5 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 isl vs. v dd (f=620mhz) isl (db) v dd (v) isl electrical characteristics (high gain mode) conditions: v ctl =1.8v, ta=25 o c, z s =z l =50 ohm, with application circuit
NJG1145UA2 - 9 - 8 9 10 11 12 13 14 15 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -40 -20 0 20 40 60 80 100 gain, nf vs. temperature (f=620mhz) gain (db) nf (db) gain nf (exclude pcb, connector losses) temperature ( o c) -10 -5 0 5 10 -40 -20 0 20 40 60 80 100 p-1db(in) vs. temperature (f=620mhz) p-1db(in) (dbm) temperature ( o c) 0 5 10 15 20 25 -40 -20 0 20 40 60 80 100 oip3, iip3 vs. temperature (f1=620mhz, f2=f1+100khz, pin=-26dbm) oip3, iip3 (dbm) oip3 iip3 temperature ( o c) 10 15 20 25 30 35 40 -40 -20 0 20 40 60 80 100 im2 vs. temperature (f1=200mhz, f2=500mhz, pin=-15dbm) im2 (db) temperature ( o c) im2 30 35 40 45 50 55 60 -40 -20 0 20 40 60 80 100 im3 vs. temperature (f1=600mhz, f2=650mhz, pin=-15dbm) im3 (db) temperature ( o c) im3 1.0 1.5 2.0 2.5 3.0 -40 -20 0 20 40 60 80 100 vswr vs. temperature (f=620mhz) vswr vswri vswro temperature ( o c) electrical characteristics (high gain mode) conditions: v dd =2.8v, v ctl =1.8v, z s =z l =50 ohm, with application circuit
NJG1145UA2 - 10 - electrical characteristics (high gain mode) conditions: v dd =2.8v, v ctl =1.8v, z s =z l =50 ohm, with application circuit -30 -25 -20 -15 -10 -5 0 -40 -20 0 20 40 60 80 100 isl vs. temperature (f=620mhz) isl (db) isl temperature ( o c) 10 12 14 16 18 20 0 5 10 15 20 25 -40 -20 0 20 40 60 80 100 i dd , i ctl vs. temperature (rf off) i dd (ma) i ctl ( a) i dd i ctl temperature ( o c) 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency (f=50mhz~20ghz) -40 o c -20 o c 0 o c +25 o c +60 o c +85 o c k factor frequency (ghz)
NJG1145UA2 - 11 - electrical characteristics (hgih gain mode) conditions: v dd =2.8v, v ctl =1.8v, t a =25 o c, z s =z l =50 ohm, with application circuit
NJG1145UA2 - 12 - electrical characteristics (low gain mode) conditions: v dd =2.8v, v ctl =0v, t a =25 o c, z s =z l =50 ohm, with application circuit -30 -20 -10 0 10 20 -20 -15 -10 -5 0 5 10 15 20 pout vs. pin (f=620mhz) pout (dbm) pin (dbm) p-1db(in)=+16.0dbm pout -5 -4 -3 -2 -1 0 0 2 4 6 8 10 -20 -15 -10 -5 0 5 10 15 20 gain, i dd vs. pin (f=620mhz) gain (db) i dd (ma) pin (dbm) gain i dd p-1db(in)=+16.0dbm -10 -8 -6 -4 -2 0 0 500 1000 1500 2000 2500 gain vs. frequency (f=50~2500mhz) gain (db) frequency (mhz) gain (exclude pcb, connector losses) 5 10 15 20 25 0 500 1000 1500 2000 2500 p-1db(in) vs. frequency (f=50~2150mhz) p-1db(in) (dbm) frequency (mhz) p-1db(in) 22 24 26 28 30 32 34 0 500 1000 1500 2000 2500 oip3, iip3 vs. frequency (f1=90~2150mhz, f2=f1+100khz, pin=-6dbm) oip3, iip3 (dbm) frequency (mhz) oip3 iip3 -100 -80 -60 -40 -20 0 20 40 -20 -10 0 10 20 30 40 pout, im3 vs. pin (f1=620mhz, f2=f1+100khz) pout, im3 (dbm) pin (dbm) pout im3 iip3=+30.3dbm
NJG1145UA2 - 13 - electrical characteristics (low gain mode) conditions: v ctl =0v, t a =25 o c, z s =z l =50 ohm, with application circuit -5 -4 -3 -2 -1 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 gain vs. v dd (f=620mhz) gain (db) v dd (v) gain 0 5 10 15 20 1.5 2.0 2.5 3.0 3.5 4.0 4.5 p-1db(in) vs. v dd (f=620mhz) p-1db(in) (dbm) v dd (v) p-1db(in) 1.0 1.2 1.4 1.6 1.8 2.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 vswr vs. v dd (f=620mhz) vswr v dd (v) vswri vswro 65 70 75 80 85 90 95 1.5 2.0 2.5 3.0 3.5 4.0 4.5 im3 vs. v dd (f1=600mhz, f2=650mhz, pin=-8dbm) im3 (dbm) v dd (v) im3 55 60 65 70 75 80 85 1.5 2.0 2.5 3.0 3.5 4.0 4.5 im2 vs. v dd (f1=200mhz, f2=500mhz, pin=-8dbm) im2 (dbm) v dd (v) im2 15 20 25 30 35 1.5 2.0 2.5 3.0 3.5 4.0 4.5 oip3, iip3 vs. v dd (f1=620mhz, f2=f1+100khz, pin=-6dbm) oip3, iip3 (dbm) v dd (v) iip3 oip3
NJG1145UA2 - 14 - 0 5 10 15 20 25 30 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i dd vs. v dd (rf off) i dd ( a) v dd (v) i dd electrical characteristics (low gain mode) conditions: v ctl =0v, t a =25 o c, z s =z l =50 ohm, with application circuit
NJG1145UA2 - 15 - electrical characteristics (low gain mode) conditions: v dd =2.8v, v ctl =0v, z s =z l =50 ohm, with application circuit -5 -4 -3 -2 -1 0 -40 -20 0 20 40 60 80 100 gain vs. temperature (f=620mhz) gain (db) temperature ( o c) gain 5 10 15 20 25 -40 -20 0 20 40 60 80 100 p-1db(in) vs. temperature (f=620mhz) p-1db(in) (dbm) temperature ( o c) p-1db(in) 1.0 1.2 1.4 1.6 1.8 2.0 -40 -20 0 20 40 60 80 100 vswr vs. temperature (f=620mhz) vswr temperature ( o c) vswri vswro 50 55 60 65 70 75 80 -40 -20 0 20 40 60 80 100 im2 vs. temperature (f1=200mhz, f2=500mhz, pin=-8dbm) im2 (dbm) temperature ( o c) im2 65 70 75 80 85 90 95 -40 -20 0 20 40 60 80 100 im3 vs. temperature (f1=600mhz, f2=650mhz,pin=-8dbm) im3 (dbm) temperature ( o c) im3 15 20 25 30 35 -40 -20 0 20 40 60 80 100 oip3, iip3 vs. temperature (f1=620mhz, f2=f1+100khz, pin=-6dbm) oip3, iip3 (dbm) temperature ( o c) iip3 oip3
NJG1145UA2 - 16 - electrical characteristics (low gain mode) conditions: v dd =2.8v, v ctl =0v, z s =z l =50 ohm, with application circuit 0 5 10 15 20 25 -40 -20 0 20 40 60 80 100 i dd vs. temperature (rf off) i dd ( a) temperature ( o c) i dd 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i dd vs. v ctl (rf off) -40 o c -20 o c 0 o c +25 o c +60 o c +85 o c i dd (ma) v ctl (v) 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency (f=50mhz~20ghz) -40 o c -20 o c 0 o c +25 o c +60 o c +85 o c k factor frequency (ghz)
NJG1145UA2 - 17 - electrical characteristics (low gain mode) conditions: v dd =2.8v, v ctl =0v, t a =25 o c, z s =z l =50 ohm, with application circuit
NJG1145UA2 - 18 - (top view) application circuit test pcb layout parts list precautions c1 is a coupling and dc blocking capacitor at the output, and c2 is a bypass capacitor. l1 is an rf choke. (dc feed inductor) in order not to couple with terminal rfin and rfou t, please layout ground pattern under the ic. all external parts are placed as close as possibl e to the ic. parts id. manufacturer l1 taiyo-yuden hk1005 series c1, c2 murata grm03 series pcb (fr-4): t=0.2mm microstrip line width =0.40mm (z 0 =50 ohm) pcb size=14.0mm x 14.0mm (top view) l1 rf out v ctl rf in 6 5 4 2 3 lna circuit bypass circuit logic circuit 1 1pin index v dd rfin gnd rfout vctl gnd gnd c1 c2 bias circuit 330pf 270nh 1000pf l1 c1 c2 vctl vdd 1pin index rf in rf out
NJG1145UA2 - 19 - measurement block diagram calibration setup noise source (agilent 346a) nf analyzer (agilent 8973a) input (50 ) noise source drive output * noise source and nf analyzer are connected directly. measurement setup noise source (agilent 346a) nf analyzer (agilent 8973a) input (50 ) noise source drive output * noise source and dut, dut and nf analyzer are connected directly. dut in out measuring instruments nf analyzer : agilent 8973a noise source : agilent 346a setting the nf analyzer measurement mode form device under test : amplifier system downconverter : off mode setup form sideband : lsb averages : 16 average mode : point bandwidth : 4mhz loss comp : off tcold : setting the temperature of noise source (30 0.0k)
NJG1145UA2 - 20 - package outline (epffp6-a2) unit :mm substrate :fr-4 terminal treat :au molding material :epoxy resin weight :0.855mg caution s on using this product this product contains gallium-arsenide (gaas) wh ich is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this pro duct. ? to wast e th is product, please obey the relati ng law of your country. this product may be damaged with electric static di scharge (esd) or spike voltage. p lease hand le with care to avoid the se damages . [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

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