(see reverse side) r0 2N5209 2n5210 npn silicon transistor to-92 case data shee t description the central semiconductor 2N5209 and 2n5210 are silicon npn transistors, manufactured by the epitaxial planar process, designed for applications requiring high gain and low noise. maximum ratings (t a =25c) symbol units collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 v emitter-base voltage v ebo 4.5 v collector current i c 50 ma power dissipation p d 350 mw power dissipation (t c =25c) p d 1.0 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w thermal resistance jc 125 c/w electrical characteristics (t a =25c) 2N5209 2n5210 symbol test conditions min max min max units i cbo v cb =35v 50 50 na i ebo v eb =3.0v 50 50 na bv cbo i c =100a 50 50 v bv ceo i c =1.0ma 50 50 v v ce(sat) i c =10ma, i b =1.0ma 0.70 0.70 v v be(on) v ce =5.0v, i c =1.0ma 0.85 0.85 v h fe v ce =5.0v, i c =100a 100 300 200 600 h fe v ce =5.0v, i c =1.0ma 150 250 h fe v ce =5.0v, i c =10ma 150 250 f t v ce =5.0v, i c =500a, f=20mhz 30 30 mhz c cb v cb =5.0v, i e =0, f=100khz 4.0 4.0 pf h fe v ce =5.0v, i c =1.0ma, f=1.0khz 150 600 250 900 nf v ce =5.0v, i c =20a, r s =22k ? , f=10hz to 15.7khz 3.0 2.0 db nf v ce =5.0v, i c =20a, r s =10k ? , f=1.0khz 4.0 3.0 db
2N5209 / 2n5210 npn silicon transistor to-92 package - mechanical outline r1 g a b f e i h c d 1 2 3 min max min max a (dia) 0.175 0.205 4.45 5.21 b 0.170 0.210 4.32 5.33 c 0.500 - 12.70 - d 0.016 0.022 0.41 0.56 e f g 0.125 0.165 3.18 4.19 h 0.080 0.105 2.03 2.67 i to-92 (rev: r1) lead code: 1) emitter 2) base 3) collector 0.015 0.38 dimensions symbol inches millimeters 0.100 2.54 0.050 1.27
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