c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . SBP13009-S SBP13009-S SBP13009-S SBP13009-S rev.a aug.2010 high voltage fast-switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa general description this device is designed for high voltage, high speed switching characteristics required such as lighting system,switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector -emitter voltage v be =0 700 v v ceo collector -emitter voltage i b =0 400 v v ebo emitter-base voltage i c =0 9.0 v i c collector current 12 a i cp collector pulse current 25 a i b base current 6.0 a i bm base peak current t p =5ms 12 a p c total dissipation at tc*=25 100 w total dissipation at ta*=25 2.2 t j operation junction temperature -40~150 t stg storage temperature -40~150 tc :case temperature (good cooling) ta :ambient temperature (without heat sink) thermal characteristics symbol parameter value units r ? jc thermal resistance junction to case 1.25 /w r ? ja thermal resistance junction to ambient 40 /w
SBP13009-S SBP13009-S SBP13009-S SBP13009-S 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (tc=25 unless otherwise noted) symbol parameter test conditions value units min typ max v ceo(sus) collector-emitter breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector -emitter saturation voltage ic=5.0a,ib=1.0a ic=8.0a,ib=1.6a ic=12a,ib=3.0a - - 0.5 1.0 1.5 v ic=8.0a,ib=1.6a tc=100 - - 2.0 v v be(sat) base -emitter saturation voltage ic=5.0a,ib=1.0a ic=8.0a,ib=1.6a - - 1.2 1.6 v ic=8.0a,ib=1.6a tc=100 - - 1.5 v i cbo collector -base cutoff current (vbe=-1.5v) vcb=700v vcb=700v,tc=100 - - 1.0 5.0 ma h fe dc current gain vce=5v,ic=5.0a vce=5v,ic=8.0a 10 6 - - 40 40 ts tf resistive load storage time fall time v cc =125v,ic=6.0a i b1 =1.6a,i b2 =-1.6a t p =25 s - 1.5 0.17 3.0 0.4 s ts tf inductive load storage time fall time v cc =15v,ic=5a i b1 =1.6a,vbe(off)=5v l=0.35mh,vclamp=300 v - - 0.8 0.04 2.0 0.1 s ts tf inductive load storage time fall time v cc =15v,ic=1a i b1 =0.4a,vbe(off)=5v l=0.2mh,vclamp=300v tc=100 - - 0.8 0.05 2.5 0.15 s note: pulse test : pulse width300,duty cycle 2%
SBP13009-S SBP13009-S SBP13009-S SBP13009-S 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 dc current gain fig.2 collector -emitter saturation voltage fig.3 bade-emitter saturation voltage fig.4 safe operation area fig.5 power derating fig.6 reverse biased safe operation area
SBP13009-S SBP13009-S SBP13009-S SBP13009-S 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance resistive load switching test circuit inductive load switching & rbsoa test circuit
SBP13009-S SBP13009-S SBP13009-S SBP13009-S 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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