feb.1999 mitsubishi transistor modules QM200DY-2HB high power switching use insulated type QM200DY-2HB outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders 112 26 17 93 0.25 25 25 21.5 c1 e2 c2e1 14 17817817 85 6 615 6 6 70 0.25 89 5 max 1 2.8 (7) 21 8.5min. b2 e2 b1 e1 b1x b2x b1x b2x b2 e2 b1 e1 c2e1 e2 c1 1 4 f 6.5 3 ?m6 label tab#110, t=0.5 15 ? i c collector current ........................ 200a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271
feb.1999 unit v v v v a a w a a c c v nm kgcm nm kgcm g mitsubishi transistor modules QM200DY-2HB high power switching use insulated type absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m6 typical value ratings 1000 1000 1000 7 200 200 1560 10 2000 C40~+150 C40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 870 electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v, collector open i c =200a, i b =270ma i c =C200a (diode forward voltage) i c =200a, v ce =4.0v v cc =600v, i c =200a i b1 =0.4a, Ci b2 =4.0a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. max. 4.0 4.0 200 4.0 4.0 1.8 2.5 15 3.0 0.08 0.35 0.04
feb.1999 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM200DY-2HB high power switching use insulated type 2 10 1 10 0 10 ? 10 ? 10 ? 10 0 10 1 10 ? 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 3.0 5.0 4.6 4.2 3.8 3.4 t j =25? v ce =4.0v 500 400 300 200 100 0 01 23 4 5 t j =25? i b =0.4a i b =8.0a i b =1.0a i b =2.0a i b =4.0a 7 5 3 2 7 5 3 2 5 4 3 2 1 0 3 2 i c =100a 7 5 t j =25? t j =125? i c =200a i c =300a 7 5 3 2 7 5 3 2 7 5 3 2 1 10 23457 23457 3 10 t s t on t f i b1 =0.4a v cc =600v ? b2 =4.0a 2 10 t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 1 10 23457 2 10 23457 3 10 t j =25? t j =125? i b =270ma ? 10 v be(sat) v be(sat) 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0 10 23457 0 10 23457 1 10 t j =25? t j =125? v ce =4v v ce =10v ? 10
feb.1999 switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM200DY-2HB high power switching use insulated type z th (jCc) ( c/ w) 3 10 2 10 1 10 0 10 ? 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 7 5 3 2 7 5 3 2 7 5 3 2 23457 23457 1 10 t s t f 0 10 t j =25? t j =125? v cc =600v i b1 =0.4a i c =200a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? 2 10 3 10 1 10 0 10 3 10 2 10 1 10 0 10 1ms 100? 50? 200? dc 7 5 3 2 7 5 3 2 7 5 3 2 0.10 0.08 0.06 0.04 0.02 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 3 10 7 5 4 3 2 2 10 7 5 4 3 2 0.4 2.4 2.0 1.6 1.2 0.8 t j =25? t j =125? 1 10 400 0 0 400 800 1200 1600 300 200 100 i b2 =?a t j =125? i b2 =?a second breakdown area collector dissipation non?epetitive
feb.1999 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) t rr ( m s) transient thermal impedance characteristics (diode part) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) z th (jCc) ( c/ w) mitsubishi transistor modules QM200DY-2HB high power switching use insulated type 0 10 3 10 2 10 1 10 ? 10 2 10 1 10 0 10 ? 10 ? 10 ? 10 7 5 4 3 2 7 5 4 3 2 0 400 800 1200 1600 2000 0 10 1 10 2 10 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0.32 0.24 0.16 0.08 0 7 5 3 2 1 10 0 10 0 10 2 7 5 34 1 10 7 5 3 2 7 5 3 2 7 5 3 2 23457 23457 3 10 2 10 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 v cc =600v i b1 =0.4a ? b2 =4a
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