sot-89-3l 1. base 2. collector 3. emitter features z small flat package z audio muting application z high emitter-base voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =0.1ma,i e =0 25 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 12 v collector cut-off current i cbo v cb =25v,i e =0 100 na emitter cut-off current i ebo v eb =12v,i c =0 100 na h fe(1) (for) v ce =2v, i c =4ma 200 800 dc current gain h fe(2)(rev) v ce =2v, i c =4ma 20 collector-emitter saturation voltage v ce(sat) i c =100ma,i b =10ma 0.25 v base-emitter saturation voltage v be(sat) i c =100ma,i b =10ma 1 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 10 pf transition frequency f t v ce =10v,i c =1ma, f=100mhz 60 mhz symbol parameter value unit v cbo collector-base voltage 25 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 12 v i c collector current 300 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 KTD1302 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
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