1/7 www.dynexsemi.com DS2907SA ds5740-1.0 february 2004 features double side cooling high surge capability applications rectification freewheel diode dc motor control power supplies voltage ratings ordering information when ordering, select the required part number shown in the voltage ratings selection table, e.g.: DS2907SA48 note: please use the complete part number when ordering and quote this number in any future correspondance relating to your order. key parameters v rrm 5200v i f(av) 4914a i fsm 70000a DS2907SA rectifier diode 5200 5000 4800 4600 4400 DS2907SA52 DS2907SA50 DS2907SA48 DS2907SA46 DS2907SA44 conditions v rsm = v rrm + 100v lower voltage grades available type number repetitive peak reverse voltage v rrm v outline type code: a see package details for further information. fig. 1 package outline
2/7 www.dynexsemi.com DS2907SA symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load 3768 a - 5916 a - 5414 a half wave resistive load 2433 a - 3820 a - 3256 a current ratings t case = 75 o c unless otherwise stated symbol parameter conditions double side cooled i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current single side cooled (anode side) i f(av) mean forward current i f(rms) rms value i f continuous (direct) forward current units max. half wave resistive load 4914 a - 7715 a - 7150 a half wave resistive load 3213 a - 5044 a - 4407 a t case = 100 o c unless otherwise stated
3/7 www.dynexsemi.com DS2907SA surge ratings conditions 10ms half sine; t case = 150 o c v r = 0 max. units symbol parameter i fsm surge (non-repetitive) forward current i 2 ti 2 t for fusing 24.5 x 10 6 a 2 s 70 ka thermal and mechanical data dc conditions min. max. units o c/w - 0.013 anode dc clamping force 83.0kn with mounting compound thermal resistance - case to heatsink r th(c-h) 0.001 double side - 150 o c t vj virtual junction temperature t stg storage temperature range reverse (blocking) single side - thermal resistance - junction to case r th(j-c) single side cooled symbol parameter clamping force 75.0 91.0 kn ?5 150 o c forward (conducting) 160 o c - 0.002 o c/w o c/w cathode dc - 0.013 o c/w double side cooled - 0.0065 o c/w characteristics forward voltage peak reverse current parameter symbol v fm i rm at v rrm , t case = 150 o c - 200 ma -1.17v at 3000a peak, t case = 25 o c conditions min. max. units - - at t vj = 150?c - v to threshold voltage r t slope resistance 0.111 m ? at t vj = 150?c - 0.82 v
4/7 www.dynexsemi.com DS2907SA curves 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.5 1.0 1.5 2.0 instantaneous forward voltage, v f - (v) instantaneous forward current, i f - (a) t j = 150 ? c fig. 2 maximum (limit) forward characteristics fig. 3 power loss curves - sine wave 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 1000 2000 3000 4000 5000 mean forward current, i f - (a) mean power dissipation - (w) 180 ? 120 ? 90 ? 60 ? 30 ? 15 ? conduction angle 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 1000 2000 3000 4000 5000 6000 mean forward current, i f(av) - (a) mean power dissipation - (w) 360 ? 180 ? 120 ? 90 ? 60 ? 30 ? conduction angle v fm equation:- v fm = a + bln (i f ) + c.i f +d. i f where a = 0.0436 b = 0.10422 c = 7.6 x 10 5 d = 0.00243 these values are valid for t j = 125 ? c for i f = 400a to 9000a fig. 4 power loss curves - square wave
5/7 www.dynexsemi.com DS2907SA 0 50 100 150 200 250 300 350 400 450 024 6 810 12 rate of decay of forward current, di f /dt - (a/us) reverse receovery current i rr - (a) fig. 7 maximum (limit) transient thermal impedance - junction to case - (?c/w) fig. 5 stored charge fig. 6 reverse recovery current 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 0 12345678910 rate of decay of forward current, di f /dt - (a/s) stored charge, q s - (c) i rr i f di f /dt q s 10 1 0.1 0.01 0.001 time - (s) 0.1 0.01 0.001 0.0001 thermal impedance - ( ? c/w) double side cooled anode side cooled 100 conduction d.c. halfwave 3 phase 120 ? 6 phase 60 ? effective thermal resistance junction to case ? c/w double side 0.0065 0.0072 0.0073 0.0076 single side 0.013 0.0137 0.0138 0.0141
6/7 www.dynexsemi.com DS2907SA package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. 100 nom cathode anode 35.0 0.5 100 nom 148 nom 138.5 nominal weight: 2575g clamping force: 83kn 10% package outline type code: a 2 holes 3.6 x 2.0 deep (in both electrodes) fig. 8 package details
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 60 69 32 36. fax: +33 (0)1 60 69 31 97. france: tel: +33 (0)2 47 55 75 53. fax: +33 (0)2 47 55 75 59. tel: +33 (0)1 60 69 32 36. fax: +33 (0)1 60 69 31 97 germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com stresses above those listed in this data sheet may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed.
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