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| inchange semiconductor product specification silicon npn power transistors BUV26A description ? ? with to-220c package ? low collector saturation voltage ? fast switching speed applications ? for use in high frequency and efficiency converters,switching regulators and motor control pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (tc=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 14 a i cm collector current (peak) 25 a i b base current 4 a i bm base current (peak) 6 a p tot total power dissipation t c =25 ?? 65 w t j max.operating junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-mb thermal resistance junction to mounting base 1.92 k/w
inchange semiconductor product specification 2 silicon npn power transistors BUV26A characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2 a ;i b =0;l=25mh 100 v v cesat-1 collector-emitter saturation voltage i c =5a ;i b =0.5 a 0.5 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =1a 1.0 v v besat-1 base-emitter saturation voltage i c =5a ;i b =0.5 a 1.2 v v besat-2 base-emitter saturation voltage i c =10a; i b =1a 1.5 v i cex collector cut-off current v ce =200v;v be =-1.5v;t j =125 ?? 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma switching times resistive load t on turn-on time 0.4 0.6 ms t s storage time 0.45 1.0 | s t f fall time i c =10a;i b1 =1a; i b2 =2a v ce =50v 0.12 0.25 | s inchange semiconductor product specification 3 silicon npn power transistors BUV26A package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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