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inchange semiconductor isc product specification isc silicon npn power transistor BU104 description collector-emitter breakdown voltage- : v (br)ceo = 150v(min.) low collector saturation voltage- : v ce(sat) = 2.5v(max.)@ i c = 7a applications designed for use in horizontal def lexion output stage of b/w tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 400 v v ceo collector-emitter voltage 150 v v cex collector-emitter voltage v be = -5v 400 v v ebo emitter-base voltage 10 v i c collector current-continuous 7 a i cm collector current-peak repetitive 15 a i b b base current-continuous 3 a p c collector power dissipation @ t c = 25 85 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU104 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 150 v v ce( sat ) collector-emitter saturation voltage i c = 7a; i b = 1a b 2.5 v v be( sat ) base-emitter saturation voltage i c = 7a; i b = 1a b 2.5 v i cbo collector cutoff current v cb = 250v; i e = 0 0.5 ma i cex collector cutoff current v ce = 400v; v be = -5v 1.0 ma i ebo emitter cutoff current v eb = 10v; i c = 0 10 ma h fe dc current gain i c = 5a; v ce = 1.75v 10 50 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v 10 mhz isc website www.iscsemi.cn 2 |
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