KTC3879 0.05a , 35v npn plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free features high power gain applications high frequency application hf, vhf band amplifier application classification of h fe product-rank KTC3879-r KTC3879-o KTC3879-y range 40~80 70~140 120~240 marking code rr ro ry package information absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo 35 v collector to emitter voltage v ceo 30 v emitter to base voltage v ebo 4 v collector current - continuous i c 50 ma collector power dissipation p c 150 mw thermal resistance from junction to ambient r ja 833 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 35 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 30 - - v i c =100 a, i b =0 emitter to base breakdown voltage v (br)ebo 4 - - v i e =100 a, i c =0 collector cut-off current i cbo - - 0.1 a v cb =30v, i e =0 collector cut-off current i ceo - - 0.2 a v ce =25v, i b =0 emitter cut-off current i ebo - - 1 a v eb =4v, i c =0 dc current gain h fe 40 - 240 v ce =12v, i c =2ma collector to emitter saturation voltage v ce(sat) - - 0.4 v i c =10ma, i b =1ma base to emitter saturation voltage v be(sat) - - 1 v i c =10ma, i b =1ma transition frequency f t 100 - - mhz v ce =10v, i c =1ma package mpq leader size sot-23 3k 7 inch sot-23 ref. millimeter ref. millimeter min. max. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50 top view a l c b d g h j f k e 1 2 3 1 2 3
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