d a t a sh eet product speci?cation file under discrete semiconductors, sc14 september 1995 discrete semiconductors bfs17a npn 3 ghz wideband transistor
september 1995 2 philips semiconductors product speci?cation npn 3 ghz wideband transistor bfs17a description npn transistor in a plastic sot23 package. applications it is intended for rf applications such as oscillators in tv tuners. pinning pin description 1 base 2 emitter 3 collector fig.1 sot23. marking code: e2p. handbook, 2 columns 2 1 3 msb003 top view quick reference data limiting values in accordance with the absolute maximum rating system (iec 134). note to the quick reference data and the limiting values 1. t s is the temperature at the soldering point of the collector pin. symbol parameter conditions typ. max. unit v cbo collector-base voltage open emitter - 25 v v ceo collector-emitter voltage open base - 15 v i c dc collector current - 25 ma p tot total power dissipation up to t s = 70 c; note 1 - 300 mw f t transition frequency i c = 25 ma; v ce = 5 v; f = 500 mhz; t amb = 25 c 2.8 - ghz g um maximum unilateral power gain i c = 14 ma; v ce = 10 v; f = 800 mhz 13.5 - db f noise ?gure i c = 2 ma; v ce = 5 v; f = 800 mhz; t amb = 25 c 2.5 - db v o output voltage d im = - 60 db; i c = 14 ma; v ce = 10 v; r l = 75 w ; t amb = 25 c; f (p+q - r) = 793.25 mhz 150 - mv symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 25 v v ceo collector-emitter voltage open base - 15 v v ebo emitter-base voltage open collector - 2.5 v i c dc collector current - 25 ma i cm peak collector current - 50 ma p tot total power dissipation up to t s = 70 c; note 1 - 300 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c
september 1995 3 philips semiconductors product speci?cation npn 3 ghz wideband transistor bfs17a thermal characteristics note 1. t s is the temperature at the soldering point of the collector pin. characteristics t j = 25 c unless otherwise speci?ed. notes 1. g um is the maximum unilateral power gain, assuming s 12 is zero and db. 2. d im = - 60 db (din 45004b); i c = 14 ma; v ce = 10 v; r l = 75 w ; t amb = 25 c; v p = v o ; f p = 795.25 mhz; v q = v o - 6 db; f q = 803.25 mhz; v r = v o - 6 db; f r = 805.25 mhz; measured at f (p+q - r) = 793.25 mhz. symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point up to t s = 70 c; note 1 260 k/w symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb = 10 v - - 50 na h fe dc current gain i c = 2 ma; v ce = 1 v; t amb = 25 c 25 90 - i c = 25 ma; v ce = 1 v; t amb = 25 c 25 90 - f t transition frequency i c = 25 ma; v ce = 5 v; f = 500 mhz; t amb = 25 c - 2.8 - ghz c c collector capacitance i e = 0; v cb = 10 v; f = 1 mhz; t amb = 25 c - 0.7 - pf c e emitter capacitance i c = 0; v eb = 0.5 v; f = 1 mhz - 1.25 - pf c re feedback capacitance i c = 0; v ce = 5 v; f = 1 mhz - 0.6 - pf g um maximum unilateral power gain note 1 i c = 14 ma; v ce = 10 v; f = 800 mhz - 13.5 - db f noise ?gure i c = 2 ma; v ce = 5 v; z s = 60 w ; f = 800 mhz; t amb = 25 c - 2.5 - db v o output voltage note 2 - 150 - mv g um 10 log s 21 2 1 s 11 2 C ? ? ? 1 s 22 2 C ? ? ? -------------------------------------------------------------- =
september 1995 4 philips semiconductors product speci?cation npn 3 ghz wideband transistor bfs17a fig.2 intermodulation distortion and second order intermodulation distortion test circuit. l1 = l3 = 5 m h ferroxcube choke. l2 = 3 turns 0.4 mm copper wire; winding pitch 1 mm; internal diameter 3 mm. handbook, full pagewidth mbb251 18 w 1.5 nf 10 k w l2 l1 1 nf 75 w 270 w 1 nf l3 1.5 nf 1 nf 0.68 pf 3.3 pf dut 75 w v cc v bb fig.3 dc current gain as a function of collector current. v ce = 1 v; t amb = 25 c. handbook, halfpage 0 100 50 0 10 30 mea395 20 i c (ma) h fe fig.4 collector capacitance as a function of collector-base voltage. i e = 0; f = 1 mhz; t amb = 25 c. handbook, halfpage mea903 0 1 0.5 0 4 8 12 16 v cb (v) c c
(pf)
september 1995 5 philips semiconductors product speci?cation npn 3 ghz wideband transistor bfs17a fig.5 transition frequency as a function of collector current. v ce = 5 v; f = 500 mhz; t amb = 25 c. handbook, halfpage mea904 0 0 1 2 3 4 20 40 i c (ma) f t
(ghz) fig.6 minimum noise figure as a function of collector current. v ce = 5 v; z s = 60 w ; f = 800 mhz; t amb = 25 c. handbook, halfpage mea902 0 5 0 1 2 3 4 10 20 f
(db) i c (ma)
september 1995 6 philips semiconductors product speci?cation npn 3 ghz wideband transistor bfs17a package outline definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. fig.7 sot23. dimensions in mm. handbook, full pagewidth mbc846 10
max o 10
max o 30
max o 1.1
max 0.55
0.45 0.150
0.090 0.1
max 2 1 3 m 0.1 a b 0.48
0.38 top view 1.4
1.2 2.5
max 3.0
2.8 m 0.2 a a b 0.95 1.9
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