june 2008 FDH5500 n-channel ultrafet power mosfet ? 2008 fairchild semiconductor corporation FDH5500 rev. a1 www.fairchildsemi.com 1 FDH5500 n-channel ultrafet power mosfet 55v, 75a, 7 m ? features ? typ r ds(on) = 5.2m ? at v gs = 10v, i d = 75a ? typ q g(10) = 118nc at v gs = 10v ? simulation models -temperature compensated pspice and saber tm models ? peak current vs pulse width curve applications ? dc linear mode control ? solenoid and motor control ? switching regulators ? automotive systems ? uis rating curve ? related literature -tb334, ?guidelines for soldering surface mount componets to pc boards? ? qualified to aec q101 ? rohs compliant www.datasheet.co.kr datasheet pdf - http://www..net/
FDH5500 n-channel ultrafet power mosfet FDH5500 rev. a1 www.fairchildsemi.com 2 mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage (note 1) 55 v v dgr drain to gate voltage (r gs = 20k ?) (note 1) 55 v v gs gate to source voltage 20 v i d drain current continuous (t c < 135 o c, v gs = 10v) 75 a pulsed see figure 4 e as single pulse avalanche energy (note 2) 864 mj p d power dissipation 375 w dreate above 25 o c2.5w/ o c t j , t stg operating and storage temperature -55 to + 175 o c t l max. lead temp. for soldering (at 1.6mm from case for 10sec) 300 t pkg max. package temp. for soldering (package body for 10sec) 260 r jc thermal resistance junction to case 0.4 o c/w r ja thermal resistance junction to ambient to-247, 1in 2 copper pad area 30 o c/w package marking and ordering information device marking device package reel size tape width quantity FDH5500 FDH5500 to-247 tube n/a 30 units electrical characteristics t c = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 55 - - v i dss zero gate voltage drain current v ds = 50v, v gs = 0v - - 1 a v ds = 45v t c = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a22.94v r ds(on) drain to source on resistance i d = 75a, v gs = 10v - 5.2 7 m ? c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 3565 - pf c oss output capacitance - 1310 - pf c rss reverse transfer capacitance - 395 - pf q g(tot) total gate charge at 20v v gs = 0 to 20v v dd = 30v i d = 75a r l = 0.4 ? i g = 1.0ma - 206 268 nc q g(10) total gate charge at 10v v gs = 0 to 10v - 118 153 nc q g(th) threshold gate charge v gs = 0 to 2v - 6.2 8.1 nc q gs gate to source gate charge - 17.8 - nc q gd gate to drain ?miller? charge - 51 - nc www.datasheet.co.kr datasheet pdf - http://www..net/
FDH5500 n-channel ultrafet power mosfet FDH5500 rev. a1 www.fairchildsemi.com 3 electrical characteristics t c = 25 o c unless otherwise noted switching characteristics drain-source diode characteristics notes: 1: starting t j = 25 o c to175 o c. 2: starting t j = 25 o c, l = 0.48mh, i as = 60a symbol parameter test conditions min typ max units t on turn-on time v dd = 30v, i d = 75a, r l = 0.4 ? , v gs = 10v, r gs = 2.5 ? - - 185 ns t d(on) turn-on delay time - 13.7 - ns t r rise time - 102 - ns t d(off) turn-off delay time - 34 - ns t f fall time - 22 - ns t off turn-off time - - 91 ns v sd source to drain diode voltage i sd = 75a - 1 1.25 v t rr reverse recovery time i f = 75a, di sd /dt = 100a/ s -6078ns q rr reverse recovery charge - 77 100 nc this product has been designed to meet the extreme test conditi ons and environment demanded by the automotive industry. for a copy of the requirements, see aec q101 at: http://www.aecouncil.com/ all fairchild semiconduc tor products are manufactured, assembled and t ested under iso9000 and qs9000 quality systems certification. www.datasheet.co.kr datasheet pdf - http://www..net/
FDH5500 n-channel ultrafet power mosfet FDH5500 rev. a1 www.fairchildsemi.com 4 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) figure 2. maximum continuous drain current vs case temperature 25 50 75 100 125 150 175 0 30 60 90 120 150 180 current limited by package v gs = 10v i d , drain current (a) t c , case temperature ( o c ) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t , rectangular pulse duration ( s ) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows: www.datasheet.co.kr datasheet pdf - http://www..net/
FDH5500 n-channel ultrafet power mosfet FDH5500 rev. a1 www.fairchildsemi.com 5 figure 5. 1 10 100 200 0.1 1 10 100 1000 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c dc forward bias safe operating area 0.01 0.1 1 10 100 1000 5000 1 10 100 1000 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 01234567 0 40 80 120 160 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 012345 0 40 80 120 160 v gs = 5.5v v gs = 10v v gs = 6v v gs = 4.5v v gs = 5v pulse duration = 80 p s duty cycle = 0.5% max i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 9. 46810 0 10 20 30 40 i d = 75a pulse duration = 80 p s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage ( v ) t j = 25 o c t j = 175 o c drain to source on-res i stance variation vs gate to source voltage figure 10. -80 -40 0 40 80 120 160 200 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 pulse duration = 80 p s duty cycle = 0.5% max i d = 75a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized drain to source on resistance vs junction temperature typical characteristics www.datasheet.co.kr datasheet pdf - http://www..net/
FDH5500 n-channel ultrafet power mosfet FDH5500 rev. a1 www.fairchildsemi.com 6 figure 11. -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature ( o c ) normalized gate threshold voltage vs junction temperature figure 12. normalized drain to source breakdown voltage vs junction temperature -80 -40 0 40 80 120 160 200 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c) figure 13. 0.1 1 10 80 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 14. 0 20406080100120140 0 2 4 6 8 10 i d = 75a v dd = 40v v dd = 20v v dd = 30v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics www.datasheet.co.kr datasheet pdf - http://www..net/
FDH5500 rev. a1 www.fairchildsemi.com 7 FDH5500 n-channel ultrafet power mosfet rev. i34 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidianries, and is not intended to be an exhaustive list of all such trademarks. * ezswitch? and flashwriter ? are trademarks of system general corporati on, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make ch anges without further notice to any products herein to improve reliabili ty, function, or design. fairchild does no t assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty ther ein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express wr itten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch? * ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp-spm? power-spm? powertrench ? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world 1mw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supermos? ? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? tm ? tm tm datasheet identification product status definition advance information formative or in design this datasheet contains the design spec ifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specificat ions. fairchild semi conductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production this datasheet contains s pecifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. www.datasheet.co.kr datasheet pdf - http://www..net/
|
