1 PNA2601M s i l i c o n n p n phototransistor for optical control systems d a r l i n g t o n phototransistor s 50 t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) sig.in r l v cc sig.out (input pulse) (output pulse) 10% 90% t r t f unit : mm 1: collector 2: emitter 2.6 0.2 2-0.45 0.15 0.15 1.7 0.7 0.8 0.5 max. 2.0 2.5 0.2 12.5 1.0 2.0 1 2 1.2 0.2 (0.4)0.8 1.45 0.2 c 0.5 2-0.7 gate the rest gate the rest r0.55 absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 35 v emitter to collector voltage v eco 6v collector current i c 30 ma collector power dissipation p c 75 mw operating ambient temperature t opr C25 to +65 ?c storage temperature t stg C30 to +85 ?c electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 0.1 0.5 m a sensitivity to infrared emitters s ir *1 v ce = 10v, h = 3.75 m w/cm 2 20 m a peak sensitivity wavelength l p v ce = 10v 850 nm acceptance half angle q measured from the optical axis to the half power point 35 deg. response time t r , t f *2 v cc = 10v, i c = 1ma, r l = 100 w 150 m s collector saturation voltage v ce(sat) i c = 100 m a, h = 3.75 m w/cm 2 0.7 1.5 v *1 measurements were made using infrared light ( l = 940 nm) as a light source. *2 switching time measuring circuit features darlington output, high sensitivity small size, thin side-view type package adoption of visible light cutoff resin
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