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  ? semiconductor components industries, llc, 2001 february, 2001 rev. 1 1 publication order number: ngd15n41cl/d ngd15n41cl product preview ignition igbt 15 amps, 410 volts nchannel dpak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. ? ideal for coilonplug applications ? dpak package offers smaller footprint and increased board space ? gateemitter esd protection ? temperature compensated gatecollector voltage clamp limits stress applied to load ? integrated esd diode protection ? new cell design increases unclamped inductive switching (uis) energy per area ? shortcircuit withstand capability ? low threshold voltage to interface power loads to logic or microprocessor devices ? low saturation voltage ? high pulsed current capability ? optional gate resistor (r g ) and gateemitter resistor (r ge ) maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 440 v dc collectorgate voltage v cer 440 v dc gateemitter voltage v ge 15 v dc collector currentcontinuous @ t c = 25 c i c 15 a dc operating and storage temperature range t j , t stg 55 to 175 c this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. 15 amps 410 volts v ce(on) = 2.1 v max http://onsemi.com device package shipping ordering information ngd15n41clt4 dpak 2500/tape & reel c e g r ge r g dpak case 369a style 2 ngd15n41cl dpak 75 units/rail marking diagram tbd tbd = specific device code
ngd15n41cl http://onsemi.com 2 unclamped draintosource avalanche characteristics (t j  150 c) characteristic symbol value unit single pulse collectortoemitter avalanche energy v cc = 50 v, v ge = 5 v, pk i l = 16 a, l = 1.8 mh, starting t j = 25 c v cc = 50 v, v ge = 5 v, pk i l = 15 a, l = 1.8 mh, starting t j = 150 c e as 225 200 mj thermal characteristics thermal resistance, junction to ambient dpak r q ja 100 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 275 c electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol test conditions min typ max unit off characteristics collectoremitter clamp voltage bv ces i c = 2 ma t j = 40 c to 175 c 380 410 440 v dc zero gate voltage collector current i ces v ce = 300 v, v ge = 0, t j = 25 c 40 m a dc v ce = 300 v, v ge = 0, t j = 150 c 200 reverse collectoremitter leakage current i ecs v ce = 24 v 1.0 ma gateemitter clamp voltage bv ges i g = 5 ma 10 16 v dc gate resistor (optional) r g 70 w gate emitter resistor (optional) r ge 10 26 k w on characteristics* gate threshold voltage v ge(th) i c = 1 ma v ge = v ce 1.0 1.4 2.1 v dc threshold temperature coefficient (negative) 4.4 mv/ c collectortoemitter onvoltage v ce(on) i c = 6 a, v ge = 4 v 1.8 v dc collectortoemitter onvoltage v ce(on) i c = 10 a, v ge = 4.5 v, t j = 150 c 2.1 v dc dynamic characteristics input capacitance c iss v cc = 15 v 700 pf output capacitance c oss v ge = 0 v 60 transfer capacitance c rss f = 1 mhz 6.0 switching characteristics* turnoff delay time t d(off) v cc = 300 v, i c = 10 a 4.0 m sec fall time t f r g = 1 k w , l = 300 m h 10 turnon delay time t d(on) v cc = 10 v, i c = 6.5 a 1.0 m sec rise time t r r g = 1 k w , r l = 1 w 4.0 *pulse test: pulse width  300 m s, duty cycle  2%.
ngd15n41cl http://onsemi.com 3 package dimensions dpak case 369a13 issue aa d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 style 2: pin 1. gate 2. drain 3. source 4. drain
ngd15n41cl http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ngd15n41cl/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland


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