tsml3700 vishay telefunken 1 (6) rev. 3, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81034 gaas/gaalas infrared emitting diode in smt package description tsml3700 is an infrared emitting diode in gaalas on gaas technology in a miniature plcc2 smd pack- age. it has been designed to meet the increasing demand on optoelectronic devices for surface mounting. the package consists of a lead frame which is sur- rounded with a white thermoplast. the reflector inside the package is filled up with clear epoxy. this new package achieves an improvement of 100% in radiant intensity, compared with the old sot23 package. features smt ired with extra high radiant power low forward voltage compatible with automatic placement equipment eia and ice standard package suitable for infrared, vapor phase and wave- solder process available in 8 mm tape suitable for pulse current operation extra wide angle of half intensity j = 60 peak wavelength p = 925 nm high reliability matching to temt3700 phototransistor 94 8553 applications infrared source in tactile keyboards ir diode in low space applications matching with phototransistor temt3700 in reflective sensors high performance pcb mounted infrared sensors high power infrared emitter for miniature light barriers
tsml3700 vishay telefunken 2 (6) rev. 3, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81034 absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 5 v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1 a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb 55...+100 c storage temperature range t stg 55...+100 c soldering temperature t 10sec t sd 260 c thermal resistance junction/ambient r thja 450 k/w basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.7 v g i f = 1 a, t p = 100 s v f 2.2 v temp. coefficient of v f i f = 100ma tk vf 1.3 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 20 pf radiant intensity i f = 100 ma, t p = 20 ms i e 2.5 7 mw/sr y i f = 1 a, t p = 100 s i e 60 mw/sr radiant power i f = 100 ma, t p = 20 ms e 32 mw temp. coefficient of e i f = 100 ma tk e 0.8 %/k angle of half intensity j 60 deg peak wavelength i f = 100 ma p 925 nm spectral bandwidth i f = 100 ma 50 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 20 ma t r 800 ns i f = 1 a t r 500 ns fall time i f = 20 ma t f 800 ns i f = 1 a t f 500 ns
tsml3700 vishay telefunken 3 (6) rev. 3, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81034 typical characteristics (t amb = 25 c unless otherwise specified) 020406080 0 50 100 150 200 250 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 94 8029 e r thja figure 1. power dissipation vs. ambient temperature 020406080 0 25 50 75 100 125 i forward current ( ma ) f t amb ambient temperature ( c ) 100 94 7916 e r thja figure 2. forward current vs. ambient temperature 0.01 0.1 1 10 1 10 100 1000 10000 t p pulse length ( ms ) 100 95 9985 i forward current ( ma ) f dc t p /t=0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb 60 c figure 3. pulse forward current vs. pulse duration 012 3 v f forward voltage ( v ) 4 94 7952 e 10 1 10 0 10 2 10 3 10 4 i forward current ( ma ) f t p = 100 s t p / t = 0.001 figure 4. forward current vs. forward voltage 020406080 0.7 0.8 0.9 1.0 1.1 1.2 v relative forward voltage frel t amb ambient temperature ( c ) 100 94 7990 e i f = 10 ma figure 5. relative forward voltage vs. ambient temperature i f forward current ( ma ) 15903 10 3 10 1 10 2 10 4 10 0 0.1 1 10 100 i radiant intensity ( mw/sr ) e figure 6. radiant intensity vs. forward current
tsml3700 vishay telefunken 4 (6) rev. 3, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81034 radiant power ( mw ) e i f forward current ( ma ) 94 8740 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 figure 7. radiant power vs. forward current 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i ; e rel e rel t amb ambient temperature ( c ) 140 94 7993 e i f = 20 ma figure 8. rel. radiant intensity\power vs. ambient temperature 875 925 0 0.25 0.5 0.75 1.0 1.25 wavelength ( nm ) 975 12757 relative radiant power e rel i f = 100 ma figure 9. relative radiant power vs. wavelength 0.4 0.2 0 0.2 0.4 i relative radiant intensity e rel 0.6 94 8013 e 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 10. relative radiant intensity vs. angular displacement
tsml3700 vishay telefunken 5 (6) rev. 3, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81034 dimensions in mm 95 11314
tsml3700 vishay telefunken 6 (6) rev. 3, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81034 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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