geometry process details process cpd17 ultra fast rectifier 3 amp glass passivated rectifier chip process glass passivated mesa die size 88 x 88 mils die thickness 14 mils anode bonding pad area 69 x 69 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? backside cathode principal device types 1n5802 thru 1n5806 ues1101 thru ues1106 cmr3u-01 series gross die per 4 inch wafer 1,200 www.centralsemi.com r4 (22-march 2010)
process cpd17 typical electrical characteristics www.centralsemi.com r4 (22-march 2010)
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