3.1 - 63 3.1 4 11 r0 high current, high voltage 600v and 1200v, up to 75 amp igbts with fred diodes features ? includes internal fred diode ? rugged package design ? solder terminals ? very low saturation voltage ? fast switching, low drive current ? available screened to mil-s-19500, tx, txv and s levels ? ceramic feedthroughs description this series of hermetically packaged products feature the latest advanced igbt technology combined with a package designed specifically for high efficiency, high current applications. they are ideally suited for hi-rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. general characteristics @ 25c schematic mechanical outline om45l120sb OM35F120SB om60l60sb om50f60sb c e g .563 .125 terminal 1 .472 2.000 .813 .125 dia. 4 plcs. .166 dia. 3 plcs. .250 2 plcs. 1.500 .324 .375 ?010 .275 ?010 .375 .875 1.375 1.750 ?010 .510 .030 .515 max. .050 ceg igbts in hermetic isolated power block packages preliminary data sheet part v ce i c number (v) (a) v ce(sat) type om60l60sb 600 75 1.8 volts lo sat. om45l120sb 1200 70 3 volts lo sat. om50f60sb 600 75 2.7 volts hi speed OM35F120SB 1200 70 4 volts hi speed
3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 om60l60sb om45l120sb om50f60sb OM35F120SB absolute maximum ratings (t c = 25c unless otherwise noted) parameters 60l60sb 45l120sb 50f60sb 35f120sb units v ces drain source voltage 600 1200 600 1200 v v cgr drain gate voltage (r gs = 1.0 m ) 600 1200 600 1200 v i c @ t c = 25c continuous drain current 75 70 75 70 a i c @ t c = 90c continuous drain current 60 45 50 35 a i c pulsed pulsed drain current 1 200 180 200 140 a p d @ t c = 25c max. power dissipation 250 250 250 250 w p d @ t c = 100c max. power dissipation 100 100 100 100 w junction-to-case linear derating factor 2 2 2 2 w/c junction-to-ambient linear derating factor .033 .033 .033 .033 w/c t j , t stg operating and storage temperature range -55 to +150 -55 to +150 -55 to +150 -55 to +150 c lead temperature (1/16" from case for 10 sec.) 230 230 230 230 c r thjc thermal resistance (junction-to-case) 0.5 0.5 0.5 0.5 c/w r thja thermal resistance (junction-to-ambient) 30 30 30 30 c/w note: 1. pulse test: pulse width 300 sec, duty cycle 2%. electrical characteristics (t c = 25c unless otherwise noted) characteristic test condition symbol part no. min. max. units gate threshold voltage v ce = v ge , i d = 250a v ge(th) all 2.5 5.0 v gate-emitter leakage current v ge = 20 v dc i ges all 100 na off state v ce = v dss x 0.8 t c = 25c i ces all 200 a collector-emitter leakage v gs = 0v t c = 125c i ces all 1 ma 60l60sb 600 collector-emitter v ge = 0v, i c = 250 a v ces 45l120sb 1200 breakdown voltage 50f60sb 600 35f120sb 1200 v 60l60sb 1.8 45l120sb 3.0 static collector-emitter voltage v ge = 15v, i c = i c(100) x 0.5 v ce(sat) 50f60sb 2.7 35f120sb 4.0 the above data is preliminary. please contact factory for additional data and the dynamic and switching characteristics.
|
