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BIC701M bias controlled monolithic ic vhf/uhf rf amplifier ade-208-703c (z) 4th. edition nov. 1, 1998 features bias controlled monolithic ic (no external dc biasing voltage on gate1.); to reduce using parts cost & pc board space. high gain; pg = 27 db typ. (at f = 200 mhz), pg = 21.5 db typ. (at f = 900 mhz) low noise; nf = 1.1 db typ. (at f = 200 mhz), nf = 1.75 db typ. (at f = 900 mhz) withstanding to esd; build in esd absorbing diode. withstand up to 200v at c=200pf, rs=0 conditions. provide mini mold packages; mpak-4(sot-143mod) outline mpak-4 1 4 3 2 1. source 2. gate1 3. gate2 4. drain notes: 1. marking is azC. 2. BIC701M is individual type number of hitachi bicmic.
BIC701M 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v ds 6v gate1 to source voltage v g1s +6 C 0 v gate2 to source voltage v g2s +6 C 0 v drain current i d 20 ma channel power dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg C55 to +150 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6 v i d = 200 m a v g2s = 0,v g1 = open gate1 to source breakdown voltage v (br)g1ss +6v i g1 = +10 m a v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6v i g2 = +10 m a v g1s = v ds = 0 gate1 to source cutoff current i g1ss +100 na v g1s = +5v v g2s = v ds = 0 gate2 to source cutoff current i g2ss +100 na v g2s = +5v v g1s = v ds = 0 gate2 to source cutoff voltage v g2s(off) 0.5 0.7 1.0 v v ds = 5v, i d = 100 m a v g1 = open drain current i ds(op) 7 1013mav ds = 5v , v g2s = 4v v g1 = open forward transfer admittance |y fs | 222732msv ds = 5v, i d = 10ma v g2s =4v, f = 1khz input capacitance c iss 1.6 2.0 2.3 pf v ds = 5v, v g2s =4v output capacitance c oss 0.6 1.0 1.4 pf v g1 = open reverse transfer capacitance c rss 0.024 0.05 pf f = 1mhz power gain pg1 23 27 db v ds = 5v, v g2s =4v v g1 = open noise figure nf1 1.1 1.6 db f = 200mhz power gain pg2 17 21.5 db v ds = 5v, v g2s =4v v g1 = open noise figure nf2 1.75 2.3 db f = 900mhz
BIC701M 3 main characteristics 200mhz power gain, noise figure test circuit gate 1 source drain gate 2 r g a i d v g2 v g1 v g2 input(50??) 1000p 36p 1000p l1 v d bbfet rfc output(50??) l2 1000p 10p max 1000p 1000p 47k 1sv70 1000p 1000p 1000p 47k 47k v t v t unit ?@ resistance ?@ ( ?? ) ?@?@ capacitance ?@ (f) 1sv70 l1 : ? 1mm enameled copper wire,inside dia 10mm, 2turns l2 : ? 1mm enameled copper wire,inside dia 10mm, 2turns rfc : ? 1mm enameled copper wire,inside dia 5mm, 2turns test circuit for operating items (i , |yfs|, ciss, coss, crss, nf, pg) d(op)
BIC701M 4 900mhz power gain, noise test circuit input output c2 c1 l1 l2 l3 l4 s g1 g2 r1 c3 r2 rfc c5 c4 d v g2 v d c1, c2 c3 c4, c5 r1 r2 variable capacitor?i10pf max) disk capacitor?i1000pf) air capacitor?i1000pf) 47 k?? 4.7 k?? ?f ?f ?f ?f ?f 26 3 3 l2?f 18 10 10 l4?f 29 7 7 l3?f ?i?1mm copper wire?j unit?fmm rfc?f?1mm copper wire with enamel 4turns inside d i 21 10 8 l1?f 10
BIC701M 5 200 150 100 50 0 50 100 150 200 0 1 2345 20 16 12 8 4 v = open g1 v = 4 v g2s 3 v 2 v 1 v 1.0 2.0 0 5 10 15 20 v = 4 v g2s 3 v 2 v 1 v 30 25 20 15 10 5 0 1 23 4 v = 5 v v = open f = 200 mhz ds g1 channel power dissipation pch (mw) ambient temperature ta (?) maximum channel power dissipation curve drain current i (ma) d typical output characteristics drain to source voltage v (v) ds drain current vs. gate1 voltage drain current i (ma) d gate1 voltage v (v) g1 power gain pg (db) power gain vs. gate2 to source voltage gate2 to source voltage v (v) g2s
BIC701M 6 30 25 20 15 10 5 0 1 23 4 5 4 3 2 1 0 1 23 4 5 4 3 2 1 0 1 23 4 30 25 20 15 10 5 0 1 23456 7 v = 5 v v = open f = 200 mhz ds g1 v = 5 v v = open f = 900 mhz ds g1 v = 5 v v = open f = 900 mhz ds g1 g2s v = 4 v v = open f = 200 mhz g1 power gain pg (db) power gain vs. gate2 to source voltage gate2 to source voltage v (v) g2s noise figure nf (db) noise figure vs. gate2 to source voltage gate2 to source voltage v (v) g2s noise figure nf (db) noise figure vs. gate2 to source voltage gate2 to source voltage v (v) g2s power gain pg (db) drain to source voltage v (v) ds power gain vs. drain to source voltage
BIC701M 7 0 23456 7 4 3 2 1 0 23456 7 4 3 2 1 30 25 20 15 10 5 0 1 23456 7 4 0 10 20 30 40 50 3 2 10 g2s v = 4 v v = open f = 200 mhz g1 1 g2s v = 4 v v = open f = 900 mhz g1 g2s v = 4 v v = open f = 900 mhz g1 noise figure nf (db) drain to source voltage v (v) ds noise figure vs. drain to source voltage noise figure nf (db) drain to source voltage v (v) ds noise figure vs. drain to source voltage power gain pg (db) drain to source voltage v (v) ds power gain vs. drain to source voltage gain reduction gr (db) gain reduction vs. gate2 to source voltage gate2 to source voltage v (v) g2s v = 5 v v = open v = 4 v f = 200 mhz ds g1 g2s
BIC701M 8 4 0 10 20 30 40 50 3 2 10 4 3 2 1 0 12 34 v = 4 v v = open f = 1 mhz ds g1 input capacitance ciss (pf) input capacitance vs. gate2 to source voltage gate2 to source voltage v (v) g2s gain reduction gr (db) gain reduction vs. gate2 to source voltage gate2 to source voltage v (v) g2s ds g1 g2s v = 5 v v = open v = 4 v f = 900 mhz
BIC701M 9 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 1 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 scale: 0.002 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 v = 5 v , v = open v = 4 v , zo =50 test condition : 50 ?` 1000 mhz (50 mhz step) ds w g1 g2s s11 parameter vs. frequency s21 parameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency v = 5 v , v = open v = 4 v , zo =50 test condition : 50 ?` 1000 mhz (50 mhz step) ds w g1 g2s v = 5 v , v = open v = 4 v , zo =50 test condition : 50 ?` 1000 mhz (50 mhz step) ds w g1 g2s v = 5 v , v = open v = 4 v , zo =50 test condition : 50 ?` 1000 mhz (50 mhz step) ds w g1 g2s
BIC701M 10 sparameter (v ds = v g1 = 5v, v g2s = 4v, v g1 = open, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 50 0.994 C3.1 2.54 175.5 0.00132 50.0 0.978 C2.4 100 0.993 C6.6 2.52 171.0 0.00201 59.8 0.981 C5.1 150 0.988 C10.5 2.51 166.4 0.00228 66.1 0.979 C7.5 200 0.983 C14.1 2.49 161.6 0.00323 66.7 0.979 C10.1 250 0.977 C17.9 2.46 157.2 0.00420 70.2 0.976 C12.7 300 0.970 C21.8 2.43 152.8 0.00514 71.9 0.974 C15.1 350 0.963 C25.4 2.40 148.6 0.00532 76.1 0.971 C17.6 400 0.951 C28.8 2.37 143.7 0.00629 74.2 0.969 C20.1 450 0.943 C32.4 2.34 139.4 0.00665 70.8 0.966 C22.4 500 0.933 C35.4 2.29 135.1 0.00700 71.6 0.962 C24.9 550 0.918 C39.1 2.25 131.1 0.00756 69.3 0.958 C27.3 600 0.906 C42.0 2.21 127.2 0.00790 68.1 0.954 C29.7 650 0.895 C45.5 2.17 123.0 0.00836 67.6 0.951 C32.2 700 0.882 C48.7 2.13 119.4 0.00820 66.1 0.946 C34.4 750 0.879 C51.1 2.09 115.6 0.00818 65.9 0.942 C36.8 800 0.860 C54.6 2.05 111.7 0.00819 66.5 0.938 C39.2 850 0.845 C58.3 2.02 107.8 0.00798 70.7 0.933 C41.5 900 0.835 C60.7 1.96 104.2 0.00787 71.9 0.929 C43.8 950 0.827 C63.3 1.92 100.5 0.00727 73.1 0.924 C46.2 1000 0.812 C66.4 1.88 97.0 0.00758 75.6 0.919 C48.5
BIC701M 11 package dimensions (unit: mm) 0.16 0 ~ 0.1 0.3 + 0.1 ?0.06 0.95 0.85 1.8 0.65 + 0.1 ?0.3 1.5 0.65 + 0.1 ?0.3 1.1 + 0.2 ?0.1 0.95 0.95 1.9 2.8 + 0.3 ?0.1 0.4 + 0.1 ?0.05 0.4 + 0.1 ?0.05 0.6 + 0.1 ?0.05 0.4 + 0.1 ?0.05 2.8 + 0.2 ?0.6 3 2 4 1 hitachi code eiaj jedec mpak? sc?1aa
BIC701M 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 2000 sierra point parkway brisbane, ca 94005-1897 tel: <1> (800) 285-1601 fax: <1> (303) 297-0447 for further information write to:

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